FLM0910-15F X-Band Internally Matched FET FEATURES ・ High Output Power: P1dB=42.0dBm(Typ.) ・ High Gain: G1dB=7.5dB(Typ.) ・ High PAE: ηadd=32%(Typ.) ・ Broad Band: 9.5~10.5GHz ・ Impedance Matched Zin/Zout = 50Ω ・ Hermetically Sealed Package DESCRIPTION The FLM0910-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Ite m Drain-Source Voltage Gate-Source Voltage Total Pow e r Dissipation Storage Temperature Channe l Te m perature Symbol V DS V GS PT Tstg Tch Unit V V W oC oC Rating 15 -5 57.7 -65 to +175 175 RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C) Ite m DC Input Voltage Forw ard Gate Current Reverse Gate Current Symbol V DS IGF IGR Condition Unit V mA mA Lim it ≦ 10 ≦ 16.7 ≧ -3.62 RG=50 ohm RG=50 ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Ite m Symbol Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Pow e r at 1dB G.C.P. Pow e r Gain at 1dB G.C.P. Drain Current Pow e r -added Efficiency Gain Flatne s s Therm al Re s istance Channe l Te m perature Rise IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G Rth ∆ Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=3.5A V DS=5V , IDS=300mA IGS=-300uA V DS=10V IDS=0.5IDSS (typ.) f= 9.5 ~ 10.5 GHz Zs=Z L=50 ohm Channel to Case 10V x Idsr X Rth Edition 1.1 May 2005 M ax. 10.8 -3.0 5.0 1.2 2.6 100 Unit A mS V V dBm dB A % dB o C/W oC G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el CASE STYLE : IB ESD M in. -0.5 -5.0 41.0 6.5 - Lim it Typ. 7.2 4500 -1.5 42.0 7.5 4.0 32 2.3 - Clas s III 2000V ~ 1 FLM0910-15F OUTPUT POWER v.s. FREQUENCY OUTPUT POWER , POWER ADDED EFFICIENCY v.s. INPUT POWER Vds=10V, Ids=0.5Idss Vds=10V, Ids=0.5Idss 44 Output Power Level [dBm] Output Power [dBm] 42 40 38 36 34 44 70 42 60 40 50 Pout 38 36 30 PAE 34 20 32 10 30 32 9.3 9.5 9.7 9.9 10.1 10.3 10.5 0 22 10.7 Pin=26dBm Pin=30dBm Pin=36dBm Pin=34dBm P1dB DRAIN CURRENT v.s. INPUT POWER Vds=10V, Ids=3.6A 4000 3900 Freq=10.0GHz 3800 3700 3600 3500 3400 3300 22 24 26 28 30 24 26 28 30 32 Input Power Level [dBm] Frequency [GHz] Drain Current [mA] 40 32 34 36 38 Input Power Level [dBm] 2 34 36 38 Efficiency [%] X-Band Internally Matched FET FLM0910-15F X-Band Internally Matched FET ■ S-PARAMETERS +50j +25j +90° +100j 10Ω 25 10.5 9.5GHz +10j +250j 10 10.5 9.5GHz 10 ∞ 0 ±180° 4 10.5 10 2 Scale for |S21| 0° 10 Scale for |S 12| 9.5GHz 10.5 -250j -10j 0.2 9.5GHz -25j -100j S11 -50j 0.4 -90° S22 S12 S21 VDS=10.0V , IDS=0.5IDSS Freq. [GHz] 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 S11 mag 0.589 0.544 0.520 0.498 0.488 0.477 0.474 0.471 0.467 0.462 0.463 0.468 0.469 0.478 0.488 S21 ang 147.4 130.9 114.6 98.6 83.8 68.8 54.6 39.4 25.4 10.4 -4.6 -21.7 -39.2 -58.6 -77.5 mag 2.678 2.649 2.618 2.569 2.538 2.524 2.509 2.524 2.514 2.519 2.553 2.563 2.591 2.554 2.514 S12 ang -98.7 -111.1 -122.5 -134.0 -144.9 -155.2 -165.9 -176.9 172.4 161.2 150.2 137.9 125.3 112.4 98.8 mag 0.041 0.043 0.046 0.049 0.054 0.059 0.061 0.066 0.069 0.073 0.077 0.083 0.085 0.088 0.090 3 S22 ang -88.1 -107.6 -127.3 -141.0 -155.7 -169.5 177.5 163.5 149.1 136.4 121.6 109.8 95.4 84.0 69.4 mag 0.374 0.387 0.397 0.401 0.396 0.390 0.380 0.368 0.349 0.321 0.290 0.250 0.215 0.174 0.126 ang 77.2 67.0 57.8 49.7 41.6 33.1 24.6 15.6 7.1 -1.2 -10.1 -20.5 -30.7 -40.2 -48.5 FLM0910-15F X-Band Internally Matched FET ■ Package Out Line Case Style : IB Unit : mm PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-15F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com Eudyna Devices Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1906B, 19/F, Tower 6, China Hong Kong City, 33 Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: （852）2377-0227 Fax: （ 852） 2377-3921 Eudyna Devices International s.r.l Via Teglio 8/2-20158 Milano Italy TEL:+39-02-8738-1695 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 5