Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB(typ.) at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition a in Rating Tc=25oC m i l e y r 120 -5 160 -65 to +175 250 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item r P DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol Condition Limit Unit VDS IGF IGR Tch RG=5 Ω RG=5 Ω 50 <19.4 >-7.2 200 V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Min. Pinch-Off Voltage Gate-Drain Breakdown Voltage Vp VDS=50V IDS=36mA VGDO -1.0 Limit Typ. Max. Unit -2.0 -3.5 V IGS= -18 mA - -350 - V - -32 - dBc 14.0 15.0 - dB - 35 - % - 1.2 1.4 oC/W 3rd Order Inter modulation Distortion IM3 VDS=50V Power Gain Gp IDS(DC)=500mA Drain Efficiency ηd Pout=42dBm(Avg.) Note 1 Thermal Resistance Channel to Case Rth Note 1 : IM3 and Gain test condition as follows: IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg. = [email protected]% Probability(CCDF)) measured over 3.84MHz at fo-10MHz and fI+10MHz. Edition 1.0 May 2005 1 EGN21A090IV High Voltage - High Power GaN-HEMT Output Power and Drain Efficiency vs. Input Power VDS=50V, IDS=500mA, f=2.14GHz 52 48 50 44 42 40 2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24 70 44 60 42 50 40 38 a in Pin=22dBm Pin=28dBm Pin=34dBm m i l e Pin=24dBm Pin=30dBm Pin=36dBm r P 34 32 Frequency [GHz] Pin=26dBm Pin=32dBm -30 -35 10 0 Input Power [dBm] IM3 lower IM5 lower IM7 lower IM3 upper IM5 upper IM7 upper -30 -35 -40 -45 -45 -50 -50 -55 0.1 26 28 30 32 34 36 38 40 42 44 46 48 1.0 2-tone Spacing [MHz] Output Power(average) [dBm] 2 30 2-tone IMD vs. Tone Spacing, VDS=50V, IDS=500mA Pout=42dBm(average) Center Frequency=2.14GHz -25 -40 40 20 -20 IMD [dBc] -25 250mA 500mA 750mA 1000mA y r Drain Effi. 16 18 20 22 24 26 28 30 32 34 36 38 40 2-tone IMD vs. Output Power VDS=50V, f1=2.135GHz, f2=2.145GHz, 10MHz Spacing -20 80 46 36 36 90 Output Power 48 46 38 IM3 [dBc] 100 Drain Efficiency [%] 50 Output Power [dBm] Output Power [dBm] Output Power vs. Frequency VDS=50V, IDS=500mA 10 EGN21A090IV High Voltage - High Power GaN-HEMT 2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power VDS=50V, IDS=500mA, f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = [email protected]% Probability(CCDF) 50 Drain Effi. -15 45 -20 40 IM3 Power Gain -30 30 -35 -40 -50 -60 28 ACLR(5MHz offset) [dBc] -25 -30 30 r P m i l e 32 34 36 38 45 Drain Effi. 40 35 ACLR DPD-OFF Power Gain 30 -35 25 -40 20 15 -45 ACLR DPD-ON -50 10 5 -55 0 -60 30 32 34 36 38 40 a in 20 15 10 5 IM7 40 42 44 0 46 Output Power [dBm] 42 44 Drain Efficiency [%], Power Gain [dB] -55 -20 y r 25 -45 -15 35 IM5 2-Carrier ACLR, Drain Efficiency and Power Gain vs. Output Power with DPD Operation (note VDS=50V, IDS=500mA f1=2.1375GHz, f2=2.1425GHz(5MHz Spacing) Peak/Avg. = [email protected]% Probability(CCDF); Single Carrier Signal Note) Digital Predistortion evaluation test system: PMC-Sierra PALADIN-15 DPD chip-set 2-carrier Spectrum with DPD Operation Pave=42dBm 10dB/div IMD [dBc] -25 Drain Efficiency [%], Power Gain [dB] -10 DPD-OFF DPD-ON 46 Output Power [dBm] Center Frequency=2.14GHz 5MHz/div 3 EGN21A090IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=500mA, f=1 to 3 GHz, Zl = Zs = 50 ohm +50j +100j +25j 2.2 +250j +10j 2.1 2.0GHz 0 2.0GHz 2.1 2.2 ∞ 50Ω -10j -250j 25Ω 10Ω -25j -100j -50j m i l e S22 r P +90° ±180° 10 S11 0° 2.2 2.2 Scale for |S21| 2.1 2.1 Freq [GHz] 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 2.0GHz 2.0GHz S12 0.1 Scale for |S 12| -90° S21 4 S11 MAG 0.939 0.944 0.938 0.932 0.921 0.905 0.888 0.853 0.800 0.707 0.573 0.415 0.400 0.386 0.373 0.361 0.353 0.343 0.339 0.335 0.337 0.341 0.604 0.843 0.901 0.915 0.912 0.916 0.907 0.901 ANG 167.7 165.7 163.8 161.9 159.4 156.3 152.8 149.1 145.1 140.5 138.0 144.1 145.8 147.9 150.2 153.1 156.1 159.3 163.0 167.3 171.6 176.1 -163.9 -177.7 170.6 163.1 156.9 150.7 144.2 138.0 S21 MAG ANG 0.960 -10.5 0.927 -15.6 0.927 -20.8 0.966 -26.4 1.034 -32.6 1.149 -39.6 1.333 -48.4 1.614 -58.9 2.025 -72.0 2.649 -89.3 3.506 -111.5 4.661 -140.3 4.792 -143.4 4.921 -146.8 5.043 -150.2 5.178 -153.7 5.327 -157.4 5.452 -160.9 5.598 -164.8 5.741 -168.9 5.888 -173.0 6.022 -177.4 6.500 132.8 4.706 85.1 2.943 54.4 1.950 35.3 1.399 21.7 1.068 10.2 0.852 0.4 0.717 -8.2 a in y r S12 MAG ANG 0.002 -36.3 0.002 -30.4 0.001 -27.5 0.002 -18.0 0.002 -15.1 0.003 -12.9 0.003 -11.3 0.004 -12.9 0.006 -22.3 0.009 -35.9 0.013 -55.8 0.020 -82.5 0.020 -85.4 0.021 -88.5 0.022 -92.1 0.022 -95.9 0.023 -98.7 0.024 -102.9 0.025 -106.1 0.026 -110.2 0.026 -114.2 0.027 -118.8 0.032 -167.5 0.025 147.6 0.017 118.4 0.013 100.5 0.010 84.4 0.008 74.9 0.007 70.5 0.006 72.0 S22 MAG ANG 0.910 -175.8 0.915 -177.3 0.915 -178.8 0.915 179.9 0.911 178.3 0.907 177.2 0.900 175.7 0.898 174.2 0.892 172.7 0.889 171.0 0.895 167.8 0.887 159.6 0.881 158.4 0.877 157.2 0.871 155.7 0.863 154.3 0.854 152.7 0.844 151.0 0.830 149.3 0.810 147.2 0.792 145.2 0.769 143.2 0.321 126.1 0.345 -138.6 0.646 -146.8 0.781 -155.9 0.848 -162.4 0.884 -167.2 0.903 -170.3 0.910 -173.4