EUDYNA FLM7785-45F

FLM7785-45F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=46.5dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=32.5%(Typ.)
・Broad Band: 7.7~8.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM7785-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC)
Symbol
Rating
Unit
Drain-Source Voltage
Item
VDS
15
V
Gate-Source Voltage
VGS
-5
V
W
Total Power Dissipation
PT
115
Storage Temperature
Tstg
-65 to +175
Channel Temperature
O
175
Tch
C
O
C
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25OC)
Item
Symbol
DC Input Voltage
Condition
VDS
Forward Gate Current
IGF
RG=10Ω
Reverse Gate Current
IGR
RG=10Ω
Limit
Unit
≤10
V
≤52
≥-23.2
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC)
Item
Symbol
Limit
Typ.
24
Max.
-
Unit
VDS=5V, VGS=0V
Min.
-
VDS=5V, IDS=8.0A
-
16
-
S
-1.5
-3.0
V
Test Conditions
A
Drain Current
IDSS
Transconductance
gm
Pinch-off Voltage
Vp
VDS=5V, IDS=960mA
-0.5
Gate-Source Breakdown Voltage
VGSO
IGS=-960uA
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
46.0
46.5
-
dBm
Power Gain at 1dB G.C.P.
G1dB
6.0
7.0
-
dB
13
A
Idsr
Drain Current
Power-added Efficiency
ηadd
Gain Flatness
∆G
Thermal Resistance
Rth
Channel Temperature Rise
∆Tch
VDS=10V
f=7.7 - 8.5 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50Ω
-
%
dB
-
1.6
Channel to Case
-
1.1
1.3
10V x Ids(DC) x Rth
-
-
100
O
C/W
O
C
G.C.P.:Gain Compression Point
Class III
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
11　32.5
-
CASE STYLE: IK
ESD
-
1
FLM7785-45F
C-Band Internally Matched FET
50
120
48
120
46
100
Output Power (dBm)
Total Power Dissipation (W)
VDS=10V, IDS(DC)=8.0A, f=8.1GHz
140
100
80
60
40
44
60
40
40
38
0
36
50
100
150
Case Temperature ( OC)
80
Pout
42
20
0
140
200
20
P.A.E
0
28
30
32
34
36
38
40
Input Power (dBm)
42
IMD vs Output Power
VDS=10V, IDS(DC)=8.0A
f1=8.50GHz,
f2=8.51GHz
Output Power vs. Frequency
VDS=10V,IDS(DC)=8A
Pin=40dBm
46
P1dB
Pin=38dBm
44
42
Pin=34dBm
40
38
Pin=30dBm
36
7.5
7.7
7.9
8.1
8.3
8.5
IMD(dBc)
Output Power (dBm)
48
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
IM3
IM5
26
8.7
Frequency (GHz)
2
28
30
32
34
36
38
Output Power (dBm)
S.C.L : Single Carrier Level
40
Power Added Efficiency (%)
Output Power & P.A.E vs. Input Power
Power Derating Curve
FLM7785-45F
C-Band Internally Matched FET
■ S-PARAMETER
+90°
+50j
+100j
+25j
+250j
8 .5 G H z
+10j
8 .5 G H z
8 .1 G H z
0
8 .1 G H z
±180° 6 65
∞
Scale for |S21|
2
7.7GHz
8.5GHz
8.5GHz
-250j
25
10Ω
-25j
-100j
S 11
-50j
S 22
8.1GHz
0.3
-90°
S 12
S 21
VDS=10V, IDS(DC)=8.0A
Freq
[GHz]
7.5
7.6
7.7
7.8
7.9
8.0
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
S11
MAG
0.59
0.54
0.49
0.44
0.36
0.31
0.26
0.21
0.19
0.18
0.17
0.16
0.15
0.12
S21
ANG
-92.42
-115.60
-132.70
-150.94
-175.21
166.47
145.07
122.80
104.80
87.15
66.26
47.84
30.74
8.33
MAG
2.42
2.50
2.53
2.55
2.58
2.59
2.57
2.56
2.55
2.55
2.54
2.55
2.55
2.53
S12
ANG
37.25
18.21
3.25
-12.24
-34.31
-51.85
-73.91
-99.42
-121.60
-143.52
-168.78
169.26
149.06
119.25
3
MAG
0.05
0.05
0.06
0.06
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0°
8.1GHz
Scale for |S12|
7 .7 G H z
-10j
7 .7 G H z
7.7GHz
S22
ANG
87.74
55.84
31.40
6.43
-27.13
-52.27
-80.04
-110.35
-134.88
-159.01
171.71
145.16
121.06
88.15
MAG
0.55
0.50
0.47
0.44
0.42
0.42
0.41
0.41
0.41
0.40
0.39
0.38
0.36
0.32
ANG
-83.48
-102.39
-118.61
-136.88
-161.09
-178.81
161.62
143.05
129.89
118.61
106.72
96.08
87.58
77.86
FLM7785-45F
C-Band Internally Matched FET
■ Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM7785-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
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