F5H2201 Ordering number : ENA0403 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor F5H2201 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 Collector-to-Emitter Voltage VCES 60 V V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (PW=1s) IC Duty cycle≤1% 12 A Collector Current (PW=100ms) IC Duty cycle≤1% 15 A PW≤10µs, duty cycle≤10% 20 A 3 A 2 W Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Total Dissipation PT Junction Temperature Tj Storage Temperature Tstg Tc=25°C, 1unit 25 W Tc=25°C 28 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007FA TI IM TC-00000572 No. A0403-1/5 F5H2201 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max Collector Cutoff Current ICBO VCB=40V, IE=0A 10 µA Emitter Cutoff Current IEBO hFE1 VEB=4V, IC=0A 10 µA DC Current Gain VCE=2V, IC=330mA 200 Gain-Bandwidth Product VCE=10V, IC=2A Output Capacitance Cob VCB=10V, f=1MHz 85 VCE(sat) IC=7.5A, IB=375mA IC=7.5A, IB=375mA 250 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time VCE=2V, IC=10A 560 hFE2 fT 50 195 MHz pF 500 1.2 IC=100µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=100µA, IC=0A mV V 60 V 60 V 50 V 6 V ton tstg See specified Test Circuit. 52 ns See specified Test Circuit. 560 ns tf See specified Test Circuit. 37 ns Fall Time Note : The specifications shown above are for each individual transistor. Package Dimensions Electrical Connection unit : mm (typ) 7526-001 2 4.5 10.0 3.2 1 TR1 4 TR2 2.8 7.2 3.5 3 Top view 16.0 5 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) 3.6 2.4 14.0 0.9 0.5 12 2.54 3 45 0.7 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) 2.75 2.4 1.27 1.27 2.54 SANYO : TO-220FI5H Switching Time Test Circuit IB1 PW=20µs D.C.≤1% IB2 INPUT VR OUTPUT RB RL + 50Ω 100µF VBE= --5V + 470µF VCC=25V IC=20IB1= --20IB2=5A No. A0403-2/5 F5H2201 IC -- VCE 12 11 10 9 8 0m 6 A 20 50mA 30mA 7 20mA 6 5 4 10mA 30mA mA 0mA 4 60 mA 1 50 20mA 70m A 300 350 mA mA Collector Current, IC -- A 13 5 15mA 80m A 250 mA 14 IC -- VCE 7 A 100m A 50m Collector Current, IC -- A 15 4 10mA 3 2 5mA 3 1 2 1 0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-to-Emitter Voltage, VCE -- V 0 DC Current Gain, hFE 11 10 9 8 6 5 4 --25 °C 5°C 25° C 7 2 0.2 0.4 0.6 0.8 1.0 1.2 Ta=75°C 3 25°C --25°C V V 1.0V V 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 2 3 5 7 0.1 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 7 5 3 2 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 IT11028 2 3 IT11025 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT11027 VCE(sat) -- IC IC / IB=20 5 3 2 0.1 7 5 °C 75 = Ta 3 7 5 0.01 C 5° --2 2 °C 25 0.01 7 1.0 5 7 10 3 7 3 5 3 VCE=2V 1.0 5 3 2 Collector Current, IC -- A f=1MHz 2 5 7 1.0 f T -- IC IT11026 7 2 5 10 0.01 5 Cob -- VCB 1000 7 Collector Current, IC -- A Gain-Bandwidth Product, f T -- MHz .0 =2 E 0.5 V 0.2 0.7 7 1.0 IT11023 5 7 VC 3 100 0.9 100 1000 5 2 2 IT11024 Ta=25°C 7 10 0.1 0.8 VCE=2V 5 10 0.01 1.4 hFE -- IC 1000 2 3 0.7 2 Base-to-Emitter Voltage, VBE -- V 10 0.01 0.6 3 1 0 0 0.5 hFE -- IC 12 Ta= 7 Collector Current, IC -- A 0.4 7 3 DC Current Gain, hFE 0.3 1000 13 Output Capacitance, Cob -- pF 0.2 Collector-to-Emitter Voltage, VCE -- V VCE=2V 14 0.1 IT11022 IC -- VBE 15 IB=0mA 0 2.0 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 2 3 IT11029 No. A0403-3/5 F5H2201 VCE(sat) -- IC 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 0.1 5 =7 °C Ta 5 5° C 7 --2 3 25 2 0.01 0.01 2 3 5 7 0.1 2 3 °C 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 2 ms 50 IC=10A (DC) s 0µ 10 0m 3 2 s 1m s DC tio era op 1.0 7 5 n 3 2 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.1 2 3 7 75°C 25°C 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 2 3 IT11031 PC -- Ta 2.5 10 10 7 5 Ta= --25°C IC=15A (PT=100ms) ICP=20A 3 2 1.0 IT11030 Forward Bias A S O 5 2 2 0.01 3 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 IC / IB=50 7 Collector Current, IC -- A VBE(sat) -- IC 3 2.0 1.5 No he at sin k 1.0 0.5 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT11032 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11033 PC -- Tc 35 Collector Dissipation, PC -- W 30 28 25 20 To ta 15 1u lD iss ipa nit tio n 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11034 No. A0403-4/5 F5H2201 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0403-5/5