SANYO F5H2201

F5H2201
Ordering number : ENA0403
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
F5H2201
50V / 15A High-Speed Switching
Applications
Applications
•
High-speed switching applications (switching regulator, driver circuit).
Features
•
•
•
•
•
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
60
Collector-to-Emitter Voltage
VCES
60
V
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
Collector Current
IC
10
A
Collector Current (PW=1s)
IC
Duty cycle≤1%
12
A
Collector Current (PW=100ms)
IC
Duty cycle≤1%
15
A
PW≤10µs, duty cycle≤10%
20
A
3
A
2
W
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Total Dissipation
PT
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C, 1unit
25
W
Tc=25°C
28
W
150
°C
--55 to +150
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53007FA TI IM TC-00000572 No. A0403-1/5
F5H2201
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
µA
Emitter Cutoff Current
IEBO
hFE1
VEB=4V, IC=0A
10
µA
DC Current Gain
VCE=2V, IC=330mA
200
Gain-Bandwidth Product
VCE=10V, IC=2A
Output Capacitance
Cob
VCB=10V, f=1MHz
85
VCE(sat)
IC=7.5A, IB=375mA
IC=7.5A, IB=375mA
250
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Storage Time
VCE=2V, IC=10A
560
hFE2
fT
50
195
MHz
pF
500
1.2
IC=100µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=100µA, IC=0A
mV
V
60
V
60
V
50
V
6
V
ton
tstg
See specified Test Circuit.
52
ns
See specified Test Circuit.
560
ns
tf
See specified Test Circuit.
37
ns
Fall Time
Note : The specifications shown above are for each individual transistor.
Package Dimensions
Electrical Connection
unit : mm (typ)
7526-001
2
4.5
10.0
3.2
1
TR1
4
TR2
2.8
7.2
3.5
3
Top view
16.0
5
1 : Base1(TR1)
2 : Emitter1(TR1)
3 : Collector(Common)
4 : Base2(TR2)
5 : Emitter2(TR2)
3.6
2.4
14.0
0.9
0.5
12
2.54
3
45
0.7
1 : Base1(TR1)
2 : Emitter1(TR1)
3 : Collector(Common)
4 : Base2(TR2)
5 : Emitter2(TR2)
2.75
2.4
1.27
1.27
2.54
SANYO : TO-220FI5H
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
OUTPUT
RB
RL
+
50Ω
100µF
VBE= --5V
+
470µF
VCC=25V
IC=20IB1= --20IB2=5A
No. A0403-2/5
F5H2201
IC -- VCE
12
11
10
9
8
0m
6
A
20
50mA
30mA
7
20mA
6
5
4
10mA
30mA
mA 0mA
4
60
mA
1
50
20mA
70m
A
300
350
mA
mA
Collector Current, IC -- A
13
5
15mA
80m
A
250
mA
14
IC -- VCE
7
A
100m
A
50m
Collector Current, IC -- A
15
4
10mA
3
2
5mA
3
1
2
1
0
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Collector-to-Emitter Voltage, VCE -- V
0
DC Current Gain, hFE
11
10
9
8
6
5
4
--25
°C
5°C
25°
C
7
2
0.2
0.4
0.6
0.8
1.0
1.2
Ta=75°C
3
25°C
--25°C
V
V
1.0V
V
5
3
2
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Collector Current, IC -- A
2
3
5 7 0.1
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
100
7
5
3
2
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
3
5
7
IT11028
2
3
IT11025
2
100
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT11027
VCE(sat) -- IC
IC / IB=20
5
3
2
0.1
7
5
°C
75
=
Ta
3
7
5
0.01
C
5°
--2
2
°C
25
0.01
7 1.0
5 7 10
3
7
3
5
3
VCE=2V
1.0
5
3
2
Collector Current, IC -- A
f=1MHz
2
5 7 1.0
f T -- IC
IT11026
7
2
5
10
0.01
5
Cob -- VCB
1000
7
Collector Current, IC -- A
Gain-Bandwidth Product, f T -- MHz
.0
=2
E
0.5
V
0.2
0.7
7
1.0
IT11023
5
7
VC
3
100
0.9
100
1000
5
2
2
IT11024
Ta=25°C
7
10
0.1
0.8
VCE=2V
5
10
0.01
1.4
hFE -- IC
1000
2 3
0.7
2
Base-to-Emitter Voltage, VBE -- V
10
0.01
0.6
3
1
0
0
0.5
hFE -- IC
12
Ta=
7
Collector Current, IC -- A
0.4
7
3
DC Current Gain, hFE
0.3
1000
13
Output Capacitance, Cob -- pF
0.2
Collector-to-Emitter Voltage, VCE -- V
VCE=2V
14
0.1
IT11022
IC -- VBE
15
IB=0mA
0
2.0
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
2
3
IT11029
No. A0403-3/5
F5H2201
VCE(sat) -- IC
1.0
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
0.1
5
=7
°C
Ta
5
5°
C
7
--2
3
25
2
0.01
0.01
2
3
5 7 0.1
2
3
°C
5 7 1.0
2
3
5 7 10
Collector Current, IC -- A
2
ms
50
IC=10A (DC)
s
0µ
10
0m
3
2
s
1m
s
DC
tio
era
op
1.0
7
5
n
3
2
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
0.1
2
3
7
75°C
25°C
5
3
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Collector Current, IC -- A
2 3
IT11031
PC -- Ta
2.5
10
10
7
5
Ta= --25°C
IC=15A (PT=100ms)
ICP=20A
3
2
1.0
IT11030
Forward Bias A S O
5
2
2
0.01
3
Collector Dissipation, PC -- W
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC / IB=20
IC / IB=50
7
Collector Current, IC -- A
VBE(sat) -- IC
3
2.0
1.5
No
he
at
sin
k
1.0
0.5
0
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5
7
IT11032
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11033
PC -- Tc
35
Collector Dissipation, PC -- W
30
28
25
20
To
ta
15
1u
lD
iss
ipa
nit
tio
n
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11034
No. A0403-4/5
F5H2201
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
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This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0403-5/5