2SA2099 / 2SC5888 Ordering number : EN7331A SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCBO VCEO Emitter-to-Base Voltage VEBO (--)6 V IC (--)10 A Collector Current Collector Current (Pulse) (--50)60 V (--)50 V ICP (--)13 A Base Current IB (--)2 A Collector Dissipation PC 2 W Junction Temperature Tj Storage Temperature Tstg Tc=25°C 25 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32608FA TI IM / D2502 TS IM TA-3711 No.7331-1/5 2SA2099 / 2SC5888 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=(--)2V, IC=(--)1A VCE=(--)5V, IC=(--)1A Output Capacitance Collector-to-Emitter Saturation Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IE=(--)100μA, IC=0A See specified Test Circuit. Storage Time tstg tf (--)50 V See specified Test Circuit. (650)1000 ns See specified Test Circuit. (60)80 ns INPUT IB1 OUTPUT IB2 RB VR 7.2 RL + + 50Ω 16.0 3.5 V ns 18.1 100μF 470μF VBE= --5V 1.6 1.2 VCC=20V 14.0 IC=20IB1= --20IB2=3A (For PNP, the polarity is reversed.) 0.75 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220ML IC -- VCE 10 A -- --9 0m IC -- VCE 10 --70mA --60mA --50mA A 0m --9 --8 0 --40mA --6 --30mA --5 --20mA --4 --10mA --3 2SC5888 40mA 30mA 9 Collector Current, IC -- A 2SA2099 mA V (--)6 2.8 3.2 5.6 (--)1.4 V 4.5 8 20mA 7 6 10mA 5 4 From top 100mA 90mA 80mA 70mA 60mA IB=0mA 50mA 3 2 --2 1 --1 IB=0mA 0 --1.0 mV Switching Time Test Circuit 10.0 --0.5 pF (--)0.93 PW=20μs D.C.≤1% 0 MHz (--50)60 unit : mm (typ) 7508-002 --7 μA (560)700 (70)40 Package Dimensions --8 μA (--)10 (--250)180 (--500)360 Collector-to-Emitter Breakdown Voltage --10 (--)10 (90)60 IC=(--)5A, IB=(--)250mA IC=(--)100μA, IE=0A IC=(--)1mA, RBE=∞ 2.55 Unit max (130)200 V(BR)CBO Collector Current, IC -- A typ 200 Collector-to-Base Breakdown Voltage Fall Time min VCB=(--)10V, f=1MHz IC=(--)5A, IB=(--)250mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Collector-to-Emitter Voltage, VCE -- V --4.5 --5.0 IT04794 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 5.0 IT04795 No.7331-2/5 2SA2099 / 2SC5888 IC -- VCE --4.0 --12mA --3.5 --10mA --3.0 --8mA --2.5 --6mA --2.0 --4mA --1.5 --2mA --1.0 A 6mA 3.5 3.0 4mA 2.5 2.0 1.5 2mA 2SC5888 From top 20mA IB=0mA 18mA --1 --2 --3 --4 --5 --6 --7 --8 Collector-to-Emitter Voltage, VCE -- V --9 0 --10 0 Collector Current, IC -- A 5°C 25°C --25° C --6 Ta= 7 --4 --2 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 6 7 8 9 10 IT04797 IC -- VBE 2SC5888 VCE=2V 8 6 4 0 0 --1.2 0.2 0.4 DC Current Gain, hFE Ta=75°C 25°C --25°C 2 100 0.8 1.0 7 1.2 IT04799 hFE -- IC 1000 2SA2099 VCE= --2V 7 0.6 Base-to-Emitter Voltage, VBE -- V IT04798 hFE -- IC 1000 7 Ta=75°C 5 25°C 2SC5888 VCE=2V --25°C 3 2 100 5 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 0.01 5 7 --10 IT04800 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT04802 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04801 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 2SA2099 VCE= --5V 2 Collector Current, IC -- A f T -- IC 3 10 --0.01 5 2 0 0 3 --0.01 4 10 --8 3 3 12 2SA2099 VCE= --2V --10 5 2 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --12 1 IT04796 5°C 25°C --25° C 0 Collector Current, IC -- A 8mA 0.5 IB=0mA 0 DC Current Gain, hFE 4.0 12 1.0 --0.5 Gain-Bandwidth Product, f T -- MHz 14m 4.5 10mA mA Ta= 7 Collector Current, IC -- A --4.5 IC -- VCE 5.0 --18mA --16mA --14mA 16m A --20mA 2SA2099 Collector Current, IC -- A --5.0 2SC5888 VCE=5V 3 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT04803 No.7331-3/5 2SA2099 / 2SC5888 Cob -- VCB 1000 7 2 100 7 5 3 2 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 7 5 5 =7 °C Ta 3 5°C C --2 25° 2 --10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 2 10 0.1 7 5 3 2 °C 75 = Ta °C --25 3 C 5° 2 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 2SA2099 IC / IB=20 2 --1000 75°C 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 5 7 10 2 3 5 7 100 IT04805 2SC5888 IC / IB=20 2 100 7 5 C 5° =7 a T 5°C 5°C --2 2 3 2 10 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04807 VCE(sat) -- IC 2SC5888 IC / IB=50 7 5 3 2 100 7 °C 75 C 5° --2 5 = Ta 3 25 °C 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT04809 VBE(sat) -- IC 3 2SC5888 IC / IB=20 2 --1000 Ta= --25°C 7 3 3 10 0.01 5 7 --10 IT04808 VBE(sat) -- IC 3 2 VCE(sat) -- IC 1000 --1000 5 7 1.0 Collector Current, IC -- A VCE(sat) -- IC 7 5 3 7 5 3 0.01 5 7 --10 IT04806 2SA2099 IC / IB=50 --100 2 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 1000 --100 7 5 --0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 100 VCE(sat) -- IC 2SA2099 IC / IB=20 2 2 2 5 7 --100 IT04804 3 3 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 5 Output Capacitance, Cob -- pF 3 2SC5888 f=1MHz 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Output Capacitance, Cob -- pF 5 Cob -- VCB 1000 2SA2099 f=1MHz 2 3 5 7 --10 IT04810 Ta= --25°C 7 75°C 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT04811 No.7331-4/5 2SA2099 / 2SC5888 ASO IC=10A 10 0m DC s ms 3 2 n tio era op 1.0 7 5 3 2 0.1 7 5 Tc=25°C Single Pulse (For PNP, minus sign is omitted.) 3 2 0.01 0.1 2 3 5 7 1.0 2 3 2.0 No 1.5 he at sin k 1.0 0.5 0 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT05371 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT05372 PC -- Tc 30 Collector Dissipation, PC -- W Collector Dissipation, PC -- W ≤10μs 50μs s 0μ 10 0 μ s 50 ms 1 10 7 5 PC -- Ta 2.5 ICP=13A 10 Collector Current, IC -- A 3 2 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT05373 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No.7331-5/5