FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ Features tm General Description Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson. Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant Application Synchronous rectifier ORing FET POL rectifier Top Bottom 5 6 7 8 D D D D 4 3 2 1 S S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C TJ, TSTG Units V ±20 V 16.5 72 (Note 1a) -Pulsed PD Ratings 20 16.5 A 36 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.0 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC8554 Device FDMC8554 ©2007 Fairchild Semiconductor Corporation FDMC8554 Rev.C Package Power 33 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 20 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 15.7 mV/°C VDS = 16V, VGS = 0V 1 TJ = 125°C 100 VGS = ±20V, VDS = 0V µA ±100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 1.0 1.8 -6.1 mV/°C VGS = 10V, ID = 16.5A 3.6 5.0 VGS = 4.5V, ID = 14A 4.6 6.4 VGS = 10V, ID = 16.5A, TJ = 125°C 5.4 7.1 VDS = 5V, ID = 16.5A 62 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2540 3380 pF 795 1060 pF 510 765 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 7 14 ns Qg(TOT) Total Gate Charge at 10V 44 62 nC Qg(TOT) Total Gate Charge at 4.5V 24 34 Qgs Gate to Source Gate Charge 8.5 nC Qgd Gate to Drain “Miller” Charge 10 nC VDD = 10V, ID = 16.5A VGS = 10V, RGEN = 6Ω VDD = 10V, ID = 16.5A 13 24 10 20 ns ns 32 51 ns nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 16.5A (Note 2) IF = 16.5A, di/dt = 100A/µs 0.8 1.3 V 31 47 ns 22 33 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8554 Rev.C 2 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3 VGS = 4.5V VGS =5V 150 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 200 VGS = 10V VGS = 4V 100 VGS = 3.5V 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 VGS =4.5V VGS = 5V 1 VGS = 10V 0 0 50 100 150 ID, DRAIN CURRENT(A) 200 20 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 1.4 1.2 1.0 ID = 16.5A VGS = 10V 0.8 0.6 -75 ID = 16.5A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 15 10 TJ = 125oC 5 TJ = 25oC 0 -50 3 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 100 ID, DRAIN CURRENT (A) VGS = 4V 2 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 75 VDD = 5V TJ = 150oC 50 25 TJ = 25oC TJ = -55oC 0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics FDMC8554 Rev.C VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8554 N-Channel PowerTrench® MOSFET 10 5000 ID = 16.5A Ciss VDD = 5V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) Typical Characteristics TJ = 25°C unless otherwise noted VDD = 10V 6 4 VDD = 15V 2 10 20 30 Qg, GATE CHARGE(nC) 40 Crss f = 1MHz VGS = 0V 100 0.1 0 0 Coss 1000 50 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) TJ = 25oC 10 TJ = 125oC 60 VGS = 10V 40 Limited by Package VGS = 4.5V 20 o RθJC = 3 C/W 1 -2 10 0 -1 10 0 1 10 10 2 3 10 25 10 50 P(PK), PEAK TRANSIENT POWER (W) rDS(on)LIMITED 10 1ms 10ms 1 100ms 1s 10s DC TA = 25OC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 150 300 VGS = 10V 100 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 150 – T A ----------------------125 SINGLE PULSE 1 R O =135 C/W θJA 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDMC8554 Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 SINGLE PULSE TJ = MAX RATED RθJA=135OC/W 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) 20 Figure 8. Capacitance vs Drain to Source Voltage 40 IAS, AVALANCHE CURRENT(A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.002 -3 10 -2 10 -1 0 1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 Figure 13. Transient Thermal Response Curve FDMC8554 Rev.C 5 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8554 N-Channel PowerTrench® MOSFET www.fairchildsemi.com 6 FDMC8554 Rev.C FDMC8554 N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMC8554 Rev.C 7 www.fairchildsemi.com