FDD6796 N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A 100% UIL tested RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 40 69 (Note 1a) -Pulsed 20 A 100 Single Pulse Avalanche Energy EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 39 42 (Note 1a) Operating and Storage Junction Temperature Range 3.7 -55 to +175 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.5 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD6796 Device FDD6796 ©2008 Fairchild Semiconductor Corporation FDD6796 Rev.C Package D-PAK (TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD6796 N-Channel PowerTrench® MOSFET May 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 25 V 6.1 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.9 -6.6 mV/°C VGS = 10 V , ID = 20 A 4.6 5.7 VGS = 4.5 V, ID = 15.5 A 6.6 9.0 VGS = 10 V, ID = 20 A, TJ = 150 °C 6.8 8.5 VDS = 5 V, ID = 20 A 138 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 1740 2315 pF 325 430 pF 290 435 pF 0.8 1.6 Ω 10 19 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 13 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 6 11 ns 23 37 ns 4 10 ns Total Gate Charge VGS = 0 V to 10 V 29 41 nC Qg Total Gate Charge 21 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 13 V, ID = 20 A 15 Qgs 4.9 nC Qgd Gate to Drain “Miller” Charge 6.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.1 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 20 A (Note 2) 0.9 1.3 IF = 20 A, di/dt = 100 A/µs V 15 26 ns 3 10 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.1 mH, IAS = 28 A, VDD = 23 V, VGS = 10 V. FDD6796 Rev.C 2 www.fairchildsemi.com FDD6796 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 10 V VGS = 4.5 V 80 ID, DRAIN CURRENT (A) VGS = 4 V VGS = 3.5 V 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 40 20 VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 3 V 3.0 VGS = 3.5 V 2.5 VGS = 4 V 2.0 1.5 VGS = 4.5 V 1.0 VGS = 10 V 0.5 3.0 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 100 20 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 20 A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 15 10 TJ = 150 oC 5 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) 40 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics VDS = 5 V 60 TJ = 175 oC 40 TJ = 25 oC 20 TJ = -55 oC 0 0 FDD6796 Rev.C PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3.5 1 2 3 4 VGS = 0 V 10 TJ = 175 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 1.4 www.fairchildsemi.com FDD6796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 20 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 10 V VDD = 16 V 4 1000 2 Coss Crss 100 50 0.1 0 0 5 10 15 20 25 30 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 100 ID, DRAIN CURRENT (A) 60 40 TJ = 25 oC 10 TJ = 150 oC 50 40 VGS = 10 V 30 VGS = 4.5 V Limited by Package 20 o RθJC = 3.5 C/W 10 1 0.01 0.1 1 10 0 25 100 50 150 175 5 10 P(PK), PEAK TRANSIENT POWER (W) 100 us 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJC = 3.5 oC/W DC TC = 25 oC 1 10 100 VGS = 10 V 4 10 SINGLE PULSE RθJC = 3.5 oC/W 3 10 TC = 25 oC 2 10 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDD6796 Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 0.1 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) f = 1 MHz VGS = 0 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD6796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 3.5 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDD6796 Rev.C 5 www.fairchildsemi.com FDD6796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDD6796 Rev. C 6 www.fairchildsemi.com FDD6796 N-Channel PowerTrench® MOSFET TRADEMARKS