FDS9412A N-Channel PowerTrench® MOSFET 30V, 8A, 21mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low rDS(on) and fast switching speed. Max rDS(on) = 21mΩ at VGS = 10V, ID = 8A Max rDS(on) = 25mΩ at VGS = 4.5V, ID = 6.6A Low gate charge RoHS Compliant Application DC/DC converters D D D D SO-8 S S S G 5 4 6 3 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (TA = 25°C, VGS = 10V, RθJA = 50°C/W ) ID 8 A -Continuous (TA = 25°C, VGS = 4.5V, RθJA = 50°C/W ) 6.6 -Pulsed 30 A 54 mJ EAS Single Pulse Avalanche Energy PD Power dissipation TJ, TSTG Operating and Storage Temperature (Note 3) 2.5 W -55 to 150 °C (Note 1) 25 °C/W (Note 1a) 50 °C/W Thermal Characteristics RθJC Thermal Resistance , Junction to Case RθJA Thermal Resistance , Junction to Ambient Package Marking and Ordering Information Device Marking FDS9412A Device FDS9412A ©2006 Fairchild Semiconductor Corporation FDS9412A Rev. A1 Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS9412A N-Channel PowerTrench® MOSFET February 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 30 V 22 mV/°C 1 TJ = 150°C 250 µA ±100 µA 2.5 V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Drain to Source On Resistance 1.2 1.9 -5.8 mV/°C VGS =10V , ID = 8A 14 21 VGS = 4.5V, ID = 6.6A 18 25 VGS = 10V, ID = 8A TJ = 150oC 20 30 740 985 pF 150 200 pF 95 145 pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS =15V, VGS = 0V, f = 1MHz f = 1MHz Ω 3 Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge at 10V VGS = 0V to 10V Qg Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 1A VGS = 10V, RGS = 6Ω VDD = 15V ID = 8A IG= 1.0mA 5 10 ns 13 23 ns 13 24 ns 12 22 ns 14 20 nC 8 12 nC 2.3 nC 3.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 8A 0.85 1.25 VGS = 0V, IS = 2.1A 0.76 1.0 V V IF = 8A, di/dt = 100A/µs 18 27 ns IF = 8A, di/dt = 100A/µs 9.6 14 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b)105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0%. 3: Starting TJ = 25oC, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V. 2 FDS9412A Rev. A1 www.fairchildsemi.com FDS9412A N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 16 3.0 VGS = 4.5V 12 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V VGS = 3.5V 8 VGS = 3V 4 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 rDS(on), ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 VGS = 3.5V 1.5 1.2 1.0 0.8 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 1.0 0.5 0 40 12 16 IS, REVERSE DRAIN CURRENT (A) 12 TJ = 150oC TJ = 25oC 4 TJ = -55oC 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID =8.0A TJ = 150oC 20 10 50 4.0 Figure 5. Transfer Characteristics TJ = 25oC 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) 10 VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS9412A Rev. A1 8 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 1.0 4 30 0 3.0 160 16 8 VGS = 10V VGS = 4.5V 50 ID = 8.0A VGS = 10V Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 2.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics 1.4 VGS = 3V www.fairchildsemi.com FDS9412A N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1200 VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 1000 8 CAPACITANCE (pF) Ciss 6 ID = 8A 4 2 0 ID = 1A 0 4 8 12 Qg, GATE CHARGE(nC) Coss Crss 400 f = 1MHz VGS = 0V 200 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance vs Drain to Source Voltage 10 TJ = ID, DRAIN CURRENT (A) 10 IAS, AVALANCHE CURRENT(A) 600 10 16 Figure 7. Gate Charge Characteristics 25oC TJ = 125oC 1 -2 10 10 -1 0 1 10 10 tAV, TIME IN AVALANCHE(ms) 10 VGS = 4.5V 4 o 2 RθJA = 50 C/W 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 10000 P(PK), PEAK TRANSIENT POWER (W) 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) SINGLE PULSE TJ=MAX RATED TA=25oC 10ms 1s 10s 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) DC 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ----------------------125 I = I25 100 10 SINGLE PULSE 1 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDS9412A Rev. A1 TA = 25oC VGS = 10V 1000 100µs 1 0.01 0.1 6 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 0.1 VGS = 10V 8 0 25 2 Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 800 www.fairchildsemi.com FDS9412A N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 1E-3 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -4 10 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 2 10 3 10 Figure 13. Transient Thermal Response Curve 5 FDS9412A Rev. A1 www.fairchildsemi.com FDS9412A N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18