FAIRCHILD FGA25N120FTD

FGA25N120FTD
tm
1200V, 25A Field Stop Trench IGBT
Features
• Field stop trench technology
General Description
• High speed switching
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applications.
• Low saturation voltage: VCE(sat) =1.6V @ IC = 25A
• High input impedance
• RoHS complaint
Applications
• Induction heating and Microvewave oven
• Soft switching applications
C
G
TO-3P
E
G C E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
V
± 25
V
@ TC = 25oC
50
A
Collector Current
o
25
A
75
A
25
A
313
W
@ TC = 100 C
Pulsed Collector Current
IC
Diode continuous Forward current
TJ
Units
1200
Collector Current
ICM (1)
PD
Ratings
@ TC = 100oC
o
Maximum Power Dissipation
@ TC = 25 C
Maximum Power Dissipation
o
@ TC = 100 C
125
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitiverating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.4
o
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.42
o
C/W
40
o
C/W
RθJA
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGA25N120FTD Rev. A
-
1
www.fairchildsemi.com
FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
April 2008
Device Marking
Device
Package
Packaging
Type
FGA25N120FTD
FGA25N120FTDTU
TO-3PN
-
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
-
30
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±250
nA
IC = 25mA, VCE = VGE
3.5
6
7.5
V
IC = 25A, VGE = 15V
-
1.6
2
V
IC = 25A, VGE = 15V,
TC = 125oC
-
1.88
-
V
-
3830
-
pF
-
130
-
pF
-
86
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
48
-
ns
tr
Rise Time
-
96
-
ns
td(off)
Turn-Off Delay Time
-
210
-
ns
tf
Fall Time
-
215
-
ns
Eon
Turn-On Switching Loss
-
0.34
-
mJ
Eoff
Turn-Off Switching Loss
-
0.90
1.20
mJ
Ets
Total Switching Loss
-
1.24
-
mJ
td(on)
Turn-On Delay Time
-
44
-
ns
tr
Rise Time
-
113
-
ns
td(off)
Turn-Off Delay Time
-
232
-
ns
tf
Fall Time
-
390
-
ns
Eon
Turn-On Switching Loss
-
0.38
-
mJ
Eoff
Turn-Off Switching Loss
-
1.39
-
mJ
Ets
Total Switching Loss
-
1.77
-
mJ
Qg
Total Gate Charge
-
160
-
nC
Qge
Gate to Emitter Charge
-
30
-
nC
Qgc
Gate to Collector Charge
-
78
-
nC
FGA25N120FTD Rev. A
VCC = 600V, IC = 25A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 600V, IC = 25A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 600V, IC = 25A,
VGE = 15V
2
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
IF = 25A
Min.
Typ.
Max
TC = 25oC
-
1.4
1.8
TC = 125oC
-
1.42
-
TC = 25oC
-
770
-
-
895
-
TC = 25oC
-
48
-
o
TC = 125 C
-
50
-
TC = 25oC
-
18
-
o
-
23
-
TC =
FGA25N120FTD Rev. A
IES =25A, dIES/dt = 200A/µs
125oC
TC = 125 C
3
Units
V
ns
A
µC
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
180
180
o
150
20V
17V
o
TC = 125 C
15V
120
12V
90
60
10V
9V
30
8V
7V
12V
90
60
10V
30
8V 7V
9V
VGE = 6V
VGE = 6V
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
10
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
6
8
Collector-Emitter Voltage, VCE [V]
10
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
90
Collector Current, IC [A]
Collector Current, IC [A]
15V
120
0
o
TC = 125 C
60
30
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
30
3
6
9
12
Gate-Emitter Voltage,VGE [V]
15
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
50A
2.4
2.1
25A
1.8
1.5
IC = 10A
1.2
0.9
25
60
0
3.0
2.7
TC = 25 C
90 T = 125oC
C
0
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
20V
17V
150
Collector Current, IC [A]
TC = 25 C
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
Common Emitter
o
TC = 25 C
16
12
8
50A
4
25A
IC = 10A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGA25N120FTD Rev. A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
6000
20
Common Emitter
12
8
25A
4
50A
0
3000
Coes
2000
1000
Cres
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
200
100
Common Emitter
o
TC = 25 C
10µs
12
Collector Current, Ic [A]
600V
VCC = 200V
9
400V
6
3
0
0
30
Figure 10. SOA Characteristics
15
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
4000
IC = 10A
0
Common Emitter
VGE = 0V, f = 1MHz
Cies
5000
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
50
100
150
Gate Charge, Qg [nC]
100µs
10
1ms
10 ms
DC
1
*Notes:
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.1
0.01
200
1
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
500
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
Switching Time [ns]
Switching Time [ns]
o
tr
100
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
o
TC = 25 C
td(off)
o
1000
TC = 125 C
tf
100
TC = 25 C
o
TC = 125 C
10
0
20
FGA25N120FTD Rev. A
40
60
80
Gate Resistance, RG [Ω]
50
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
5
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1500
500
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
1000
o
o
TC = 25 C
TC = 25 C
tr
TC = 125 C
o
TC = 125 C
Switching Time [ns]
Switching Time [ns]
o
100
td(on)
tf
td(off)
100
10
5
10
20
30
40
5
45
10
20
Figure 15. Switching Loss vs. Gate Resistance
40
45
Figure 16. Switching Loss vs. Collector Current
10000
10000
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10Ω
IC = 25A
TC = 25 C
o
o
TC = 25 C
Switching Loss [µJ]
Switching Loss [µJ]
30
Collector Current, IC [A]
Collector Current, IC [A]
o
TC = 125 C
Eoff
1000
Eon
Eoff
o
TC = 125 C
1000
Eon
100
30
200
0
20
40
60
80
Gate Resistance, RG [Ω]
0
100
10
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
Figure 18. Forward Characteristics
100
30
Forward Current, IF [A]
Collector Current, IC [A]
10
10
o
TJ = 125 C
1
o
Safe Operating Area
o
VGE = 15V, TC = 125 C
TC = 25 C
o
TC = 125 C
1
1
0.1
0.0
10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
FGA25N120FTD Rev. A
o
TJ = 25 C
6
0.5
1.0
1.5
Forward Voltage, VF [V]
2.0
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
30
Stored Recovery Charge, Qrr [µC]
Reverse Recovery Currnet, Irr [A]
60
50
200A/µs
40
di/dt = 100A/µs
30
20
10
15
20
25
Forward Current, IF [A]
20
200A/µs
di/dt = 100A/µs
10
0
10
30
15
20
25
30
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
Reverse Recovery Time, trr [ns]
1200
1000
di/dt = 100A/µs
800
200A/µs
600
400
10
15
20
25
30
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1 0.2
0.01
0.1
0.05
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
FGA25N120FTD Rev. A
PDM
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
7
1
10
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FGA25N120FTD Rev. A
8
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1.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
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Not In Production
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Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FGA25N120FTD Rev. A
9
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
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