FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for General Inverter switching applications. • Low saturation voltage: VCE(sat) = 1.60V @ IC = 25A • High input impedance • RoHS compliant Application • UPS, Solar Inverter, Welding Machine, General Purpose Inverters E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ± 25 V IC ICM (1) o Collector Current @ TC = 25 C 50 A Collector Current @ TC = 100oC 25 A 75 A 25 A 75 A Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD o @ TC = 100 C o Maximum Power Dissipation @ TC = 25 C 313 W Maximum Power Dissipation @ TC = 100oC 125 W TJ Operating Junction Temperature -55 to +150 o C Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. RθJC(IGBT) Thermal Resistance, Junction to Case - 0.4 RθJC(Diode) Thermal Resistance, Junction to Case - 1.25 RθJA Thermal Resistance, Junction to Ambient - 40 ©2009 Fairchild Semiconductor Corporation FGH25N120FTDS Rev. A 1 Units o C/W oC/W o C/W www.fairchildsemi.com FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT June 2009 Device Marking Device Package FGH25N120FTDS FGH25N120FTDS TO-3PN Eco Status Packaging Type Qty per Tube Tube 30ea RoHS For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 25mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 6 7.5 V IC = 25A, VGE = 15V - 1.6 2 V IC = 25A, VGE = 15V, TC = 125oC - 1.92 - V - 4090 - pF VCE = 30V, VGE = 0V, f = 1MHz - 135 - pF - 75 - pF - 26 35 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 41 53 ns td(off) Turn-Off Delay Time - 151 196 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 600V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC - 102 132 ns - 1.42 1.84 mJ Turn-Off Switching Loss - 1.16 1.50 mJ Total Switching Loss - 2.58 3.34 mJ td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 41 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Qg - 163 - ns - 136 - ns - 2.04 - mJ - 1.58 - mJ Total Switching Loss - 3.62 - mJ Total Gate Charge - 169 225 nC - 33 44 nC - 78 104 nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH25N120FTDS Rev. A VCC = 600V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 600V, IC = 25A, VGE = 15V 2 www.fairchildsemi.com FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Parameter TC = 25°C unless otherwise noted Test Conditions VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr IES = 25A, Diode Peak Reverse Recovery Current di/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGH25N120FTDS Rev. A IF = 25A Min. Typ. Max TC = 25oC - 2.5 3.5 TC = 125oC - 2.3 - TC = 25oC - 411 535 - 496 - TC = 25oC - 5.2 6.8 o TC = 125 C - 6.9 - TC = 25oC - 1.1 1.82 o - 1.7 - TC = 125oC TC = 125 C 3 Units V ns A µC www.fairchildsemi.com FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 Figure 2. Typical Output Characteristics 180 o o TC = 25 C TC = 125 C 20V 17V 15V 20V 150 12V 120 90 10V 60 9V 15V 17V Collector Current, IC [A] Collector Current, IC [A] 150 12V 120 90 10V 60 9V 30 30 VGE = 8V VGE = 8V 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 0 Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V 100 o TC = 25 C o TC = 125 C 80 Common Emitter VCE = 20V 100 Collector Current, IC [A] Collector Current, IC [A] 8 Figure 4. Transfer Characteristics 120 60 40 o TC = 25 C o TC = 125 C 80 60 40 20 20 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 15 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Common Emitter 50A 2.5 5 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. V GE 3.0 Collector-Emitter Voltage, VCE [V] 2 4 6 Collector-Emitter Voltage, VCE [V] 2.0 25A 1.5 IC = 10A o TC = 25 C 16 12 8 50A 4 25A IC = 10A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH25N120FTDS Rev. A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Load Current vs. Frequency 140 20 VCC = 600V load Current : peak of square wave Common Emitter 120 TC = 125 C 16 Load Current [A] Collector-Emitter Voltage, VCE [V] o 12 8 100 80 60 40 50A 4 Duty cycle : 50% o 20 TC = 100 C 25A IC = 10A Powe Dissipation = 125W 0 0 10 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 1 3 10 Figure 10. Gate Charge Characteristics 15 8000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C 6000 Capacitance [pF] 2 10 10 Frequency [kHz] Cies 4000 Coes 2000 TC = 25 C 12 VCC = 200V 600V 400V 9 6 3 Cres 0 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics Gate Resistance 40 80 120 160 Gate Charge, Qg [nC] 200 Figure 12. Turn-on Characteristics vs. Gate Resistance 200 200 100 100 100µs 10 Switching Time [ns] Collector Current, Ic [A] 10µs 1ms 10 ms DC 1 *Notes: 0.1 tr Common Emitter VCC = 600V, VGE = 15V IC = 25A td(on) o 1. TC = 25 C o TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 FGH25N120FTDS Rev. A o TC = 125 C 10 0 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] 10 20 30 40 50 Gate Resistance, RG [Ω ] 5 www.fairchildsemi.com Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 100 Common Emitter VGE = 15V, RG = 10Ω o td(off) o TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 25A tr td(on) o TC = 25 C o TC = 125 C 10 0 10 20 30 Gate Resistance, RG [Ω ] 40 10 50 0 20 30 40 50 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 10 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 600V, VGE = 15V o IC = 25A TC = 25 C o TC = 125 C o TC = 25 C Switching Loss [mJ] Switching Time [ns] 10 tf 100 td(off) o TC = 125 C Eon Eoff 20 0 10 20 30 40 Collector Current, IC [A] 1 50 Figure 17. Switching Loss vs. Collector Current 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 Figure 18. Turn off Switing SOA Characteristics 10 100 Common Emitter VGE = 15V, RG = 10Ω o Switching Loss [mJ] Collector Current, IC [A] Eon TC = 25 C o TC = 125 C Eoff 1 10 Safe Operating Area o 0.1 0 FGH25N120FTDS Rev. A 10 20 30 Collector Current, IC [A] 40 VGE = 15V, TC = 125 C 1 50 1 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current 7 Reverse Recovery Currnet, Irr [A] 30 Forward Current, IF [A] 10 o TJ = 125 C o TJ = 25 C 1 o TC = 25 C 6 200A/µs 5 4 di/dt = 100A/µs 3 o TC = 125 C 2 10 0.1 0 1 2 Forward Voltage, VF [V] 3 Figure 21. Stored Charge 1200 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [µC] 50 Figure 22. Reverse Recovery Time 2.0 1.5 200A/µs 1.0 di/dt = 100A/µs 0.5 0.0 10 20 30 40 Forward Current, IF [A] 20 30 40 Forward Current, IF [A] 1000 di/dt = 100A/µs 800 200A/µs 600 400 10 50 20 30 Forward Current, IF [A] 40 Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.1 0.5 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 0.001 1E-5 0.0001 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGH25N120FTDS Rev. A 7 www.fairchildsemi.com FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH25N120FTDS Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. R ev . I 40 9 FGH25N120FTDS Rev. 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