MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15 RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure. DRAWING 2 3.5+/-0.05 OUTLINE DESCRIPTION FEATURES APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 INDEX MARK (Gate) (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD02MUS1B-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) RD02MUS1B MITSUBISHI ELECTRIC 1/8 30 Jul 2007 (0.22) 3 (0.25) 0.2+/-0.05 High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS UNIT 30 V +/-20 V 21.9 W 0.1 W 1.5 A °C 150 -40 to +125 °C °C/W 5.7 Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout1 ηD1 Pout2 ηD2 PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f=175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(Pin Control) f=175MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) VDD=9.2V,Po=2W(Pin Control) f=520MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1 2 55 2 50 LIMITS TYP MAX. 100 1 1.8 3 3 65 3 65 - UNIT uA uA V W % W % No destroy - No destroy - Note: Above parameters, ratings, limits and conditions are subject to change. RD02MUS1B MITSUBISHI ELECTRIC 2/8 30 Jul 2007 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1B OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) 20 15 On PCB(*1) with Heat-sink 10 5 2.0 Ids 1.5 1.0 GM 0.5 On PCB(*1) 0.0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS 4.5 4.0 1 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 5.0 40 Vgs=10V Vgs=9V Vgs=8V Ta=+25°C Ta=+25°C f=1MHz 30 Vgs=7V 3.5 3.0 2.5 2.0 1.5 Vgs=6V Vgs=5V Ciss(pF) Ids(A) Ta=+25°C Vds=7.2V 2.5 Ids(A),GM(S) CHANNEL DISSIPATION Pch(W) 25 Vgs-Ids CHARACTERISTICS 3.0 20 10 1.0 0.5 0.0 Vgs=4V 0 Vgs=3V 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 40 6 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 5 Crss(pF) Coss(pF) 30 20 4 3 2 10 1 0 0 0 RD02MUS1B 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 3/8 5 10 Vds(V) 15 20 30 Jul 2007 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1B OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz Po 70 ηｄ 60 20 50 15 Ta=+25°C f=175MHz Vdd=7.2V Idq=200mA 10 5 40 5 10 Pin(dBm) 15 Pin-Po CHARACTERISTICS @f=520MHz 40 35 Po(dBm) , Gp(dB) , Idd(A) 30 60 15 50 Ta=+25°C f=520MHz Vdd=7.2V Idq=200mA 10 5 40 5 1.4 Po Idd 4 6 1.0 5 0.8 4 0.6 2 1 0 RD02MUS1B 1.2 3 3 5 7 9 Vdd(V) 11 1.0 Idd Ta=25°C f=520MHz Vdd=7.2V Idq=200mA 60 40 13 20 100 20 40 60 Pin(mW) 80 Vdd-Po CHARACTERISTICS @f=520MHz 7 Po(W) 6 2.0 0 Idd(A) Ta=25°C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm ηd 20 Vdd-Po CHARACTERISTICS @f=175MHz 7 Po(W) 15 80 3.0 0.0 20 5 10 Pin(dBm) 100 30 0 0 20 100 80 Po ηd(%) 70 ηｄ 20 -5 40 60 Pin(mW) Pin-Po CHARACTERISTICS @f=520MHz 4.0 80 -10 20 90 Gp 40 Idd 0 100 Po 25 1.0 20 Pout(W) , Idd(A) 0 60 Ta=25°C f=175MHz Vdd=7.2V Idq=200mA 0.0 20 -5 2.0 30 0 -10 80 ηd ηd(%) 25 Po 3.0 ηd(%) 80 Gp Ta=25°C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm 1.4 Po 1.2 1.0 Idd 0.8 3 0.6 0.4 2 0.4 0.2 1 0.2 0.0 0 Idd(A) 30 100 90 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) 35 4.0 100 ηd(%) 40 Pin-Po CHARACTERISTICS @f=175MHz 0.0 3 MITSUBISHI ELECTRIC 4/8 5 7 9 Vdd(V) 11 13 30 Jul 2007 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1B OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TEST CIRCUIT(f=175MHz) V dd V gg C1 19m m 3mm 33m m 15m m RD02MUS1B RD 02MV S1 175MHz 4.7kO HM RF-IN 6.5m m 12m m 10pF L3 13.5m m 12m m 5m m RF-O UT 5mm 3m m 3m m 11.5m m 5m m 62pF 10uF,50V C2 L1 68O HM 39pF 62pF L2 43pF 10pF 240pF L1: Enam eled wire 5T urns,D:0.43m m,2.46m m O .D L2: Enam eled wire 3T urns,D:0.43m m ,2.46m m O .D L3: Enameled wire 9Turns,D :0.43m m ,2.46mm O .D Note:Board m aterial-Teflon substrate Micro s trip line width=2.2m m /50O HM,er:2.7,t=0.8m m C1,C2:1000pF,0.0022uF in parallel TEST CIRCUIT(f=520MHz) Vgg Vdd C1 C2 19m m 19m m 4.7kO HM 26.5m m 20mm 2m m 10uF,50V R D02MUS 1 B L1 520MHz 4.5m m 10m m 40.5m m 3m m R F -IN RF-O UT 11m m 62pF 62pF 68O HM 6pF 43pF 18pF 240pF L1: E nam eled wire 9Turns,D :0.43m m ,2.46m mO .D C 1,C 2:1000pF,0.022uF in parallel RD02MUS1B Note:B oard m aterial-Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8mm MITSUBISHI ELECTRIC 5/8 30 Jul 2007 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50Ω Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input outputimpedance impedance 175MHz Zout* 520MHz Zin* Zout* Zo=50Ω Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5.56+j1.31 520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input outputimpedance impedance 520MHz Zout* RD02MUS1B MITSUBISHI ELECTRIC 6/8 30 Jul 2007 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA) Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD02MUS1B S11 (mag) 0.847 0.828 0.824 0.817 0.816 0.816 0.820 0.827 0.835 0.844 0.854 0.858 0.859 0.862 0.871 0.878 0.883 0.890 0.897 0.899 0.905 0.907 0.913 0.915 0.918 (ang) -132.5 -144.6 -148.1 -152.8 -156.2 -161.2 -164.9 -167.6 -169.9 -171.9 -173.6 -174.3 -174.7 -175.3 -176.7 -178.0 -179.4 179.4 178.3 177.0 176.0 175.1 174.3 173.2 172.6 S21 (mag) (ang) 16.923 100.2 12.806 90.7 11.555 87.5 9.864 82.8 8.579 78.6 6.712 71.2 5.436 64.9 4.501 59.3 3.813 54.0 3.257 49.3 2.823 44.9 2.668 43.1 2.613 42.6 2.458 40.9 2.161 37.1 1.911 33.5 1.701 30.4 1.522 27.3 1.368 24.4 1.238 21.7 1.123 19.3 1.025 17.1 0.937 14.9 0.859 12.9 0.794 11.0 S12 (mag) 0.042 0.042 0.042 0.042 0.041 0.039 0.038 0.036 0.034 0.032 0.031 0.030 0.030 0.029 0.027 0.025 0.024 0.022 0.021 0.019 0.018 0.016 0.015 0.013 0.012 MITSUBISHI ELECTRIC 7/8 S22 (ang) 8.9 -0.1 -3.3 -7.6 -11.2 -17.6 -23.0 -28.2 -32.2 -36.5 -39.8 -41.1 -41.9 -43.2 -46.6 -49.5 -51.5 -54.4 -56.1 -58.7 -59.4 -60.7 -62.1 -64.4 -64.9 (mag) 0.621 0.598 0.591 0.590 0.594 0.609 0.628 0.653 0.675 0.699 0.723 0.732 0.735 0.743 0.763 0.781 0.798 0.811 0.824 0.836 0.845 0.853 0.861 0.870 0.874 (ang) -118.8 -130.5 -133.7 -138.0 -141.2 -145.5 -148.8 -151.2 -153.5 -155.8 -157.7 -158.4 -158.6 -159.6 -161.5 -162.9 -164.6 -166.1 -167.7 -169.0 -170.3 -171.4 -172.5 -173.5 -174.6 30 Jul 2007 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD02MUS1B MITSUBISHI ELECTRIC 8/8 30 Jul 2007