MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 3.6±0.2 9±0.4 4 1.2±0.4 1 For output stage of high power amplifiers in VHF band mobile radio sets. 2 3 2.5 2.5 5deg 9.5MAX 9.3MIN 0.8±0.15 APPLICATION RoHS COMPLIANT note(3) 7.5MIN 4.8MAX 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz 12.3±0.6 FEATURES 1.3±0.4 9.1±0.7 3.2±0.4 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 0.62±0.2 4.5±0.5 DESCRIPTION 3.1±0.6 RoHS Compliance, PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation. (3) RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD06HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD06HVF1 Silicon MOSFET Power Transistor 175MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 27.8 W Zg=Zl=50Ω 0.6 W 3 A °C 150 -40 to +150 °C °C/W junction to case 4.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.3W, f=175MHz, Idq=0.3A VDD=15.2V,Po=6W(Pin Control) f=175MHz,Idq=0.3A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6 10 60 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD06HVF1 MITSUBISHI ELECTRIC 2/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 5 CHANNEL DISSIPATION Pch(W) 50 CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 4 30 3 Ids(A) 40 20 Ta=+25°C Vds=10V 2 1 10 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 2 4 6 Vgs(V) 8 10 Vds VS. Ciss CHARACTERISTICS Vds-Ids CHARACTERISTICS 4 60 Vgs=10V Ta=+25°C Vgs=9V 3 Ta=+25°C f=1MHz 50 2 Vgs=7V 1 Ciss(pF) Ids(A) 40 Vgs=8V 2 4 6 Vds(V) 8 20 Vgs=6V 10 Vgs=5V 0 0 0 30 0 10 Vds VS. Coss CHARACTERISTICS 30 Vds VS. Crss CHARACTERISTICS 10 Ta=+25°C f=1MHz 80 Ta=+25°C f=1MHz 8 Crss(pF) 60 40 6 4 20 2 0 0 0 10 20 30 0 10 20 30 Vds(V) Vds(V) RD06HVF1 20 Vds(V) 100 Coss(pF) 10 MITSUBISHI ELECTRIC 3/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po Po 12 90 10 80 30 60 ηｄ 40 20 Gp 20 10 5 10 15 20 Pin(dBm) 25 6 Ta=25°C f=175MHz Vdd=12.5V Idq=0.3A 4 Idd 0.0 30 Vdd-Po CHARACTERISTICS 3 Po 0.5 30 0.6 Idd(A) 2 8 Idd 6 1 4 +25°C -25°C 10 Po(W) 0.4 Vds=10V Tc=-25~+75°C 4 Ids(A),GM(S) 12 0.3 Pin(W) 5 4 14 0.2 50 Vgs-Ids CHARACTORISTICS 2 16 Ta=25°C f=175MHz Pin=0.3W Idq=0.3A Zg=ZI=50 ohm 0.1 60 40 0 0 0 ηd 2 Ｉｄｄ 0 70 8 ηd(%) 80 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) 40 100 14 100 Ta=+25°C f=175MHz Vdd=12.5V Idq=0.3A ηd(%) 50 3 +75°C 2 1 2 0 0 4 6 8 10 Vdd(V) 12 14 0 0 2 4 6 Vgs(V) 8 10 Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75°C gm(S) 1.5 -25°C 1.0 +25°C 0.5 +75°C 0.0 0 RD06HVF1 1 2 3 4 5 Vgs(V) 6 7 8 9 MITSUBISHI ELECTRIC 4/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TEST CIRCUIT(f=175MHz) Vgg C1 Vdd 9.1kOHM L6 C3 8.2kOHM 100OHM C2 300pF L1 L2 L4 L3 175MHz RD06HVF1 L5 RF-IN RF-OUT 82pF 300pF 10pF 7 5pF 5 30pF 70 25 30 87 33 52 92 55 100 72 75 92 100 Note:Board material-Teflon substrate C1:2200pF 10uF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel Dimensions:mm C3:2200pF,330uF in parallel L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD06HVF1 MITSUBISHI ELECTRIC 5/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=175MHz Zout* Zo=50ohm f=135MHz Zo f=175MHz Zin* f=175MH Zo Zin , Zout RD06HVF1 f Zin Zout (MHz) (ohm) (ohm) Conditions 175 4.25-j25.6 5.64-j1.05 Po=10W, Vdd=12.5V,Pin=0.3W MITSUBISHI ELECTRIC 6/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 RD06HVF1 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 MITSUBISHI ELECTRIC 7/8 S22 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD06HVF1 Silicon MOSFET Power Transistor 175MHz,6W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD06HVF1 MITSUBISHI ELECTRIC 8/8 10 Jan 2006