MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 2 14.0+/-0.4 High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 APPLICATION 5.1+/-0.5 3 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 75 2.5 7 175 -40 to +175 2.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD (Tc=25°C, UNLESS OTHERWISE NOTED) PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.3 30 55 LIMITS TYP MAX. 130 1 1.8 2.3 35 60 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD30HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC 2/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 10 CHANNEL DISSIPATION Pch(W) 100 8 60 6 Ids(A) 80 40 4 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS Vgs=5.5V 8 Vgs=5V 6 Vgs=4.5V 4 Vgs=4V Ciss(pF) Ta=+25°C Vgs=3.5V 2 Vgs=3V 0 0 2 4 6 Vds(V) 8 1 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 10 Ids(A) Ta=+25°C Vds=10V 200 180 160 140 120 100 80 60 40 20 0 Ta=+25°C f=1MHz 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 140 20 Ta=+25°C f=1MHz 120 Ta=+25°C f=1MHz 16 Crss(pF) Coss(pF) 100 80 60 12 8 40 4 20 0 0 0 5 10 Vds(V) 15 0 20 5 10 Vds(V) 15 20 TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC 3/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W Pin-Po CHARACTERISTICS Po 40 30 60 Gp 20 40 10 Ｉｄｄ 0 10 20 Pin(dBm) 30 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A 20 20 10 0 0 30 0 20 0.5 1 1.5 Pin(W) 0 2.5 2 Vgs-Ids CHARACTERISTICS 2 80 8 16 Ta=25°C f=175MHz Pin=1.0W Idq=0.5A Zg=ZI=50 ohm Vds=10V Tc=-25~+75°C 14 +25°C -25°C 6 12 8 Idd(A) 40 Ids(A) 10 Po Po(W) 40 Idd Vdd-Po CHARACTERISTICS 60 60 ηd ηd(%) ηｄ 0 80 80 Pout(W) , Idd(A) 40 100 100 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A 50 Pin-Po CHARACTERISTICS +75°C 4 6 Idd 20 2 4 2 0 0 0 4 6 8 10 Vdd(V) 12 2 14 3 4 5 Vgs(V) TEST CIRCUIT(f=175MHz) RD30HVF1 MITSUBISHI ELECTRIC 4/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W Vdd Vgg C1 9.1kOHM L1 C3 100OHM 8.2kOHM 10pF 175MHz RD30HVF1 L1 RF-in L2 C2 RF-OUT 56pF 56pF 100pF 100pF 33pF100pF 8pF 12 43pF 5pF 50pF 10 27 32 34 51 32 44 54 90 10.8 90 100 100 Note:Board material-Teflon substrate C1:2200pF 10uF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel C3:2200pF,330uF in parallel 8 4.8 Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC 5/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W f=175MHz Zout Zo=10Ω f=146MHz Zout f=135MHz Zout f=175MHz Zin f=135MHz Zin f=146MHz Zin Zin , Zout RD30HVF1 f Zin Zout (MHz) (ohm) (ohm) Conditions 135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W 146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W 175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W MITSUBISHI ELECTRIC 6/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1100 RD30HVF1 S11 (mag) 0.867 0.879 0.885 0.888 0.905 0.915 0.926 0.933 0.936 0.945 0.950 0.951 0.954 0.957 0.962 0.963 0.963 0.963 0.962 0.964 0.966 S21 (ang) -172.4 -176.3 -177.5 -179.1 178.5 176.2 174.1 171.8 169.5 167.6 165.6 163.6 161.7 159.9 158.2 156.5 154.8 153.2 151.6 150.1 146.9 (mag) 8.747 5.523 4.571 3.852 2.877 2.202 1.754 1.422 1.167 0.985 0.842 0.725 0.635 0.559 0.495 0.449 0.407 0.366 0.337 0.315 0.275 S12 (ang) 72.7 61.2 56.4 52.4 44.1 37.1 31.4 25.8 20.9 17.2 13.3 9.8 7.2 3.7 1.3 -0.5 -3.8 -5.2 -6.6 -9.9 -12.1 (mag) 0.015 0.014 0.013 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.005 0.005 0.005 0.007 0.007 0.008 0.009 0.011 0.011 0.013 0.015 MITSUBISHI ELECTRIC 7/8 S22 (ang) -11.6 -18.8 -22.2 -24.2 -26.2 -27.0 -24.4 -18.5 -8.2 8.0 21.6 35.6 45.7 53.5 58.4 61.6 60.7 61.5 63.1 65.6 62.3 (mag) 0.687 0.723 0.740 0.760 0.806 0.825 0.853 0.879 0.887 0.902 0.914 0.918 0.928 0.933 0.936 0.943 0.947 0.947 0.953 0.955 0.958 (ang) -166.3 -168.8 -169.6 -170.5 -172.5 -174.8 -177.1 -179.4 178.4 176.1 174.1 172.2 170.2 168.4 166.6 164.8 163.3 161.7 159.9 158.7 155.5 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD30HVF1 MITSUBISHI ELECTRIC 8/8 10 Jan 2006