FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E010MK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition VDS VGS Tc=25oC Pt Tstg Tch Rating 32 -3 41.5 -65 to +175 200 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item Symbol Condition Limit Unit VDS IGF IGR Tch RG=50 Ω RG=50 Ω <28 <47 >-2.5 155 V mA mA oC DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Limit Typ. Max. Unit -0.2 -0.5 V - - V Pinch-Off Voltage Vp VDS=5V IDS=1.5mA -0.1 Gate-Source Breakdown Voltage VGSO IGS=-15µA -5 Output Power at 1dB G.C.P. P1dB VDS=28V f=2.17GHz 39.0 40.0 - dBm Power Gain at 1dB G.C.P. G1dB IDS(DC)=125mA 13.0 14.0 - dB Drain Efficiency ηd - 40 - Thermal Resistance Channel to Case Rth - 3.1 3.6 % oC /W G.C.P.:Gain Compression Point Edition 1.3 Mar 2004 1 FLL21E010MK High Voltage - High Power GaAs FET 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 80 70 60 50 40 30 20 Drain Efficiency [%] Output Power [dBm] Output Power & Drain Efficiency vs. Input Power @VDS=28V IDS=125mA f=2.17GHz 10 0 10 12 14 16 18 20 22 24 26 28 30 Input Pow er [dBm ] Drain Efficiency Single-Carrier ACLR & Drain Efficiency vs. Output Power @VDS=28V IDS=125mA f=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation -25 40.0 -25 40.0 -30 35.0 -30 35.0 -35 30.0 -35 30.0 -40 25.0 -40 25.0 -45 20.0 -45 20.0 -50 15.0 -50 15.0 -55 10.0 -55 10.0 -60 5.0 24 IM3 26 28 30 32 34 ALCR [dBc] Drain Efficiency [%] IMD [dBc] Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power @VDS=28V IDS=125mA fo=2.1325GHz f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation -60 5.0 24 36 26 28 30 32 34 36 Output Pow er [dBm ] Output Pow er [dBm ] IM5 Drain Efficiency +/-5MHz 2 +/-10MHz Drain Efficiency Drain Efficiency [%] Pout FLL21E010MK High Voltage - High Power GaAs FET S-Parameters @VDS=28V IDS=300mA f=0.5 to 5.0 GHz +50j +100j 5.0 +25j 5.0 4.0 +250j +10j 4.0 3.0 2.0 0 1.0 3.0 ∞ 2.0 0.5G H z 100Ω 1.0 -10j 50Ω 0.5G H z -250j 25Ω 10Ω -25j -100j S 11 -50j S 22 +90° 0.5G H z 1.0 5 4 0.3 0.4 -90° 3 2.0 Scale for |S 12| ±180° 8 6 Scale for |S21| 0° S 12 !freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.1 0.958 -120.1 38.897 110.3 0.005 17.9 0.226 -81.4 0.2 0.948 -148.0 20.943 88.1 0.005 -1.4 0.291 -101.0 0.3 0.945 -158.9 13.801 74.6 0.005 -11.9 0.375 -111.0 0.4 0.946 -164.3 9.953 64.0 0.004 -12.0 0.459 -119.0 0.5 0.945 -167.8 7.598 55.3 0.004 -7.9 0.531 -125.8 1 0.956 -175.7 2.880 24.4 0.002 29.6 0.756 -150.1 1.1 0.953 -176.5 2.487 19.5 0.002 32.1 0.778 -153.5 1.2 0.955 -177.5 2.153 15.5 0.002 52.9 0.806 -156.5 1.3 0.956 -177.9 1.906 11.7 0.003 50.6 0.826 -159.6 1.4 0.954 -178.8 1.688 7.8 0.003 60.6 0.839 -162.2 1.5 0.956 -179.6 1.526 4.5 0.005 65.7 0.854 -164.2 1.6 0.952 -179.7 1.391 1.3 0.004 61.6 0.869 -166.4 1.7 0.955 179.8 1.255 -1.7 0.004 74.9 0.873 -168.7 1.8 0.955 178.8 1.154 -4.5 0.006 80.3 0.879 -170.1 1.9 0.959 178.3 1.070 -7.3 0.006 73.5 0.889 -172.1 1.95 0.953 178.1 1.023 -9.2 0.007 80.8 0.888 -173.0 2 0.956 177.8 0.984 -9.9 0.007 77.8 0.890 -173.7 2.05 0.960 177.6 0.961 -11.6 0.007 77.2 0.897 -174.2 2.1 0.952 177.4 0.920 -13.1 0.008 71.8 0.902 -175.1 2.11 0.959 177.2 0.920 -13.4 0.007 79.5 0.899 -175.5 2.12 0.960 177.5 0.910 -13.5 0.007 76.2 0.901 -175.5 2.13 0.957 176.9 0.908 -13.9 0.008 74.8 0.906 -175.7 2.14 0.958 177.1 0.902 -13.4 0.011 61.1 0.900 -175.8 2.15 0.955 176.9 0.891 -14.4 0.008 74.9 0.905 -176.0 2.16 0.952 176.7 0.889 -15.2 0.007 74.5 0.904 -176.3 2.17 0.957 176.8 0.878 -14.8 0.007 79.2 0.910 -176.5 2.18 0.959 176.8 0.873 -15.0 0.008 69.0 0.905 -176.6 2.19 0.961 176.7 0.869 -15.2 0.007 72.9 0.906 -176.5 2.2 0.954 176.5 0.855 -15.9 0.007 77.2 0.904 -177.0 2.25 0.956 176.7 0.832 -16.7 0.007 78.7 0.909 -177.4 2.3 0.953 175.9 0.810 -17.5 0.008 74.9 0.909 -178.0 2.35 0.956 175.4 0.784 -19.7 0.009 80.0 0.920 -178.4 2.4 0.958 175.4 0.771 -20.7 0.009 75.0 0.919 -179.3 2.5 0.950 174.6 0.731 -22.7 0.010 75.0 0.920 179.5 2.6 0.951 174.0 0.701 -25.0 0.011 78.1 0.922 178.6 2.7 0.947 173.6 0.673 -27.7 0.012 74.2 0.931 177.0 2.8 0.953 172.5 0.652 -30.1 0.011 75.5 0.924 175.7 2.9 0.944 171.6 0.635 -33.1 0.013 74.0 0.927 174.9 3 0.949 170.8 0.609 -35.5 0.014 70.5 0.930 173.5 S 21 3 FLL21E010MK High Voltage - High Power GaAs FET BOARD LAYOUT <INPUT SIDE> Φ µ Ω <OUTPUT SIDE> 16 V /1 0 µ F Ω µ εr=10.45 t=1.2mm 4 FLL21E010MK High Voltage - High Power GaAs FET MK Package Outline Metal-Ceramic Hermetic Package PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm 5 FLL21E010MK High Voltage - High Power GaAs FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 6