ETC FLM5964-35F

FLM5964-35F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=45.5dBm(Typ.)
・High Gain: G1dB=9.0dB(Typ.)
・High PAE: ηadd=36%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM5964-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
Rating
15
-5
115
-65 to +175
175
Symbol
V DS
V GS
PT
Ts t g
Tch
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25o C)
Item
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Sym bol
V DS
IGF
IGR
Condition
Unit
V
mA
mA
Lim it
≤ 10
≤ 108
≥ -23.2
RG=10Ω
RG=10Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C)
Item
Sym bol
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
IDSS
gm
Vp
V GSO
P1d B
G1d B
Id s r
ηad d
∆G
3rd Order Interm odulation
Distortion
IM3
Condition
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
VDS=10V
f=5.9 - 6.4 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50 ohm
Lim it
Typ.
16
16
-1.5
45.5
9.0
8.5
36
-
Max.
-3.0
9.5
1.2
A
S
V
V
dBm
dB
A
%
dB
-38
-40
-
dBc
Unit
f=6.4 GHz
∆ f=10MHz, 2-tone Test
Pout=35.0dBm(S.C.L.)
Channel to Case
10V x IDS(DC) X Rth
Rth
Therm al Resistance
∆ Tch
Channel Tem perature Rise
CASE STYLE : IK
ESD
Class III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
Min.
-0.5
-5.0
45.0
8.0
-
1
-
o
1.1
1.3
C/W
o
100
C
G.C.P.:Gain Compression Point
FLM5964-35F
C-Band Internally Matched FET
Output Power & P.A.E. vs. Input Power
Power Derating Curve
120
Output Power (dBm)
Total Power Dissipation (W)
140
100
80
60
40
49
80
47
70
45
43
40
39
30
37
35
0
33
50
100
150
10
0
24
200
20
P.A.E
Case Temperature (℃ )
26
28
30
32
34
36
38
40
42
Input Power (dBm)
IMD vs. Output Power
Output Power vs. Frequency
VDS =10V, IDS (DC)=8A
f1=6.40GHz, f2=6.41GHz
VDS=10V, IDS(DC)=8A
-25
48
Pin=41dBm
P1dB
46
44
-30
-35
Pin=34dBm
IMD (dBc)
Output Power (dBm)
50
41
20
0
60
Pout
42
40
Pin=30dBm
IM3
-40
-45
IM5
-50
38
36
-55
Pin=26dBm
-60
34
5.7 5.8
5.9
6
6.1
6.2 6.3 6.4
30 31 32 33 34
6.5 6.6
35 36 37 38 39 40
O utput Power (S.C.L.) (dBm)
S.C.L. :Single Carria Level
Frequency (GHz)
2
Power Added Efficiency (%)
VDS=10V, IDS(DC), F=6.15GHz
FLM5964-35F
C-Band Internally Matched FET
■ S-PARAMETER
+90°
+50j
+25j
+100j
7.4
6.4
5.5
6.15
+10j
7.4
5.9
6.4
6.15
6.8
∞ ±180° 3
6.8
25
5.5
6.4
6.8
5.9
2
5.9
6.15
10
-10j
-10j
-250j
6.4
10
-25j
-100j
Scale for |S21|
S 22
5.5
S 12
S 21
VDS=10V, IDS(DC)=8.0A
Freq.
[G H z]
5.50
5.60
5.70
5.80
5.90
6.00
6.10
6.20
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
S 11
M AG
0.67
0.66
0.65
0.63
0.61
0.58
0.55
0.52
0.47
0.45
0.44
0.47
0.52
0.59
0.67
0.73
0.79
0.83
0.86
0.87
S 21
ANG
102.87
85.51
68.42
50.90
33.18
14.84
-4.44
-25.22
-49.01
-76.47
-106.87
-137.61
-166.01
170.37
150.03
133.37
119.68
107.43
97.28
87.88
M AG
2.88
2.95
3.02
3.06
3.11
3.14
3.18
3.20
3.20
3.19
3.12
3.00
2.82
2.62
2.36
2.13
1.89
1.66
1.45
1.26
S 12
ANG
-62.72
-79.17
-96.11
-113.27
-130.34
-147.42
-165.14
177.48
159.01
140.15
120.73
100.85
81.21
62.01
43.29
24.82
8.66
-7.74
-22.74
-36.91
3
M AG
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.06
0.06
0.05
0.05
0.04
0.04
0.03
S 22
ANG
-95.54
-114.71
-134.53
-153.13
-169.44
172.50
155.67
138.90
120.83
103.25
83.21
62.73
42.98
23.63
6.16
-11.73
-26.89
-41.76
-60.07
-69.68
0°
7.4
0.2
-90°
S 11
-50j
5.5 7.4
Scale for |S 12|
10Ω
5.9
6.15
6.8
0
+250j
M AG
0.24
0.20
0.19
0.20
0.22
0.24
0.26
0.26
0.25
0.22
0.16
0.09
0.03
0.11
0.21
0.30
0.38
0.46
0.53
0.59
ANG
-177.89
153.50
122.57
95.12
72.18
52.33
37.03
24.21
12.17
-0.99
-13.32
-19.73
45.23
95.85
91.96
81.85
71.10
60.22
50.29
41.32
FLM5964-35F
C-Band Internally Matched FET
■ Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM5964-35F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
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