FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Rating 15 -5 115.4 -65 to +175 175 Symbol V DS V GS PT Ts tg Tch Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25o C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR Condition Unit V mA mA Lim it ≤ 12 ≤ 107.2 ≥ -23.2 RG=13 ohm RG=13 ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Sym bol Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness Therm al Resistance Channel Tem perature Rise IDSS gm Vp V GSO P1d B G1d B Id s r Nad d ∆G Rt h ∆ Tch Condition V DS =5V, V GS =0V V DS =5V, IDS =8.0A V DS =5V, IDS =960mA IGS =-960uA V DS =12V IDS (DC)=8.0A (typ.) f= 5.3 ~ 5.9 GHz Zs=ZL=50 ohm Channel to Case 12V x IDS (DC) X Rt h CASE STYLE : IK ESD Class III 2000V ~ Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ) Edition 1.2 September 2004 1 Min. -1.0 -5.0 46.0 7.5 - Lim it Typ. 16.0 8000 -2.0 46.5 8.5 8.5 36 0.8 - Max. -3.5 10.0 1.4 1.0 100 Unit A mS V V dBm dB A % dB o C/W o C G.C.P.: Gain Compression Point FLM5359-45F C-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER POWER DERATING CURVE Output Power (dBm) 80 60 40 20 0 0 50 100 150 200 120 46 100 44 80 42 60 40 40 38 20 36 0 26 Case Temperature O[ C] 28 30 32 34 36 38 Input Power (dBm) OUTPUT POWER vs FREQUENCY VDS=12V, IDS=8.0A Output Power [dBm] Total Power Dissipation [W] 100 48 48 P1dB 46 Pin=38dBm 44 33dBm 42 30dBm 40 38 28dBm 36 5.2 5.3 5.4 5.5 5.6 5.7 Frequency [GHz] 2 5.8 5.9 6.0 40 42 Power Added Efficiency (%) VDS=12V, IDS=8.0A, f=5.6GHz 120 FLM5359-45F C-Band Internally Matched FET ■ S-PARAMETER +90° +50j +100j 10Ω 5 6 +10j 5 .9 5 .3 G H z +250j 5 .9 5 6 0 Scale for |S21| 2 ±180° 3 ∞ 5 .3 G H z 5 .9 5 .9 -10j 0° 5 .3 G H z 5 6 5 6 -25j 5 .3 G H z -250j -100j 0.2 -90° S 11 -50j S 22 Scale for | S 12| +25j S 12 S 21 VDS=12V, IDS=7.0A Freq. [G H z] 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 S 11 M AG 0.668 0.595 0.510 0.391 0.268 0.154 0.126 0.194 0.274 0.346 0.421 S 21 ANG -150.7 -168.2 172.3 148.1 119.3 71.6 -2.5 -55.4 -88.6 -112.3 -134.5 M AG 2.792 3.083 3.380 3.652 3.773 3.740 3.593 3.372 3.149 2.900 2.686 S 12 ANG 11.2 -7.4 -28.3 -50.3 -73.4 -96.7 -119.0 -140.0 -159.9 -178.7 162.8 3 M AG 0.031 0.039 0.048 0.057 0.065 0.071 0.074 0.076 0.073 0.073 0.070 S 22 ANG -1.5 -31.3 -61.7 -86.5 -112.3 -136.4 -158.3 -179.5 160.9 141.5 124.6 M AG 0.528 0.470 0.420 0.395 0.397 0.422 0.461 0.500 0.529 0.546 0.543 ANG -114.3 -136.0 -162.5 166.1 132.7 102.2 75.6 54.6 38.1 23.9 12.0 FLM5359-45F C-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM5359-45F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5