FLM1011-20F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=43.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 10.7~11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Symbol Rating Unit Drain-Source Voltage Item VDS 15 V Gate-Source Voltage VGS -5 V 93.7 W Total Power Dissipation PT Storage Temperature Tstg -65 to +175 Channel Temperature Tch 175 C o C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25°C) Item Symbol Unit Limit Condition ≤10 DC Input Voltage VDS Forward Gate Current IGF RG=25Ω Reverse Gate Current IGR RG=25Ω V ≤64 ≥-11.2 mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Test Conditions Symbol Min. - Limit Typ. 10.8 Max. 16.2 Unit A Drain Current IDSS VDS=5V, VGS=0V Transconductance gm VDS=5V, IDS=6480mA - 10 - S Pinch-off Voltage Vp -1.5 -3.0 V VGSO VDS=5V, IDS=600mA IGS=-600µA -0.5 Gate-Source Breakdown Voltage -5.0 - - V Output Power at 1dB G.C.P. P1dB 42 43 - dBm Power Gain at 1dB G.C.P. G1dB 6.0 7.0 - dB - 6.0 7.2 A - 27 - % - - 1.2 dB -42.0 -45.0 - dBc 1.4 1.6 Idsr Drain Current Power-added Efficiency ηadd Gain Flatness ∆G VDS=10V f=10.7 - 11.7 GHz IDS=0.60IDSS(typ) Zs=ZL=50Ω 3rd Order Intermodulation Distortion IM3 f= 11.7 GHz Δf=10MHz, 2-tone Test Pout=31.0dBm (S.C.L.) Thermal Resistance Rth Channel to Case Channel Temperature Rise CASE STYLE: IK ESD Class III ∆Tch C /W o oC 100 10V x Idsr X Rth G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW) Edition 1.2 September 2004 - 1 FLM1011-20F X-Band Internally Matched FET Out Power & P.A.E. vs. Input Power VDS =10V, IDS (DC)=6A,f=11.2GHz 90 44 80 Output Power [dBm] Total Power Dissapation [W] 70 46 70 60 50 40 30 20 60 Output Power 42 50 40 40 38 30 36 34 10 0 0 50 100 150 Case Temperature [oC] 10 32 200 0 24 26 28 30 34 36 38 40 IMD vs. Output Power VDS=10V, IDS(DC)=6A f1=11.7GHz, f2=11.71GHz -20 45 P1dB -25 43 38dBm -30 36dBm -35 42 34dBm 41 40 32dBm 39 IM3 & 5 [dBc] 44 Output Power [dBm] 32 Input Power [dBm] Output Power vs. Frequency VDS=10V, IDS(DC)=6A 38 10.45 20 P.A.E. Power Added Efficiency [%] POWER DERATING CURVE 100 IM3 -40 -45 -50 IM5 -55 -60 -65 -70 10.7 10.95 11.2 11.45 Frequency [GHz] 11.7 23 11.95 2 25 27 29 31 33 35 Output Power [dBm] S.C.L. [Single Carrier Level] 37 39 FLM1011-20F X-Band Internally Matched FET ■ S-PARAMETER +90° +50j +25j +100j 10Ω 11.2GHz 25 10.2G H +10j 10.7G H z +250j 11.2GHz 11.7GHz 0 10.7G H Z 11.7G H z ∞ ±180° 3 11.7G H z 11.2G H Z 11.2G H 10.7GHz 10.7 2 Scale for |S21| 11.7GHz 10.2GHz 12.2GHz -250j -10j 12.2GHz 10.2GHz 10 -25j -100j S 11 -50j 0.2 -90° S 22 VDS=10V, IDS(DC)=6.0A S 21 S 12 S 11 S 12 S 21 S 22 F re q. [G H z] M AG ANG M AG ANG M AG ANG M AG ANG 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12 12.1 12.2 0.521 0.516 0.508 0.503 0.500 0.489 0.479 0.456 0.436 0.399 0.362 0.310 0.258 0.196 0.148 0.138 0.171 0.236 0.296 0.358 0.407 112.49 98.68 84.31 70.95 56.68 43.24 28.27 13.87 -2.48 -18.79 -36.36 -55.88 -77.82 -105.52 -141.44 166.07 121.58 89.39 65.33 46.14 29.27 2.228 2.263 2.281 2.301 2.334 2.356 2.406 2.450 2.488 2.519 2.542 2.560 2.566 2.556 2.518 2.452 2.366 2.251 2.117 1.983 1.843 -113.83 -127.73 -141.96 -156.16 -170.00 175.80 161.30 146.67 131.08 115.49 99.63 83.45 66.63 49.29 31.92 14.11 -3.80 -21.35 -39.04 -56.37 -72.76 0.051 0.050 0.051 0.051 0.052 0.053 0.054 0.055 0.058 0.062 0.065 0.072 0.076 0.084 0.091 0.100 0.105 0.115 0.123 0.131 0.140 -125.01 -136.72 -150.92 -165.30 -178.71 165.80 150.63 133.33 116.65 99.59 80.88 63.06 45.29 26.43 9.71 -7.99 -24.24 -40.28 -55.69 -69.11 -82.75 0.267 0.316 0.366 0.408 0.436 0.449 0.459 0.469 0.469 0.457 0.421 0.377 0.328 0.277 0.218 0.143 0.071 0.047 0.083 0.122 0.167 57.91 47.11 37.85 30.57 23.88 16.49 8.08 -0.73 -9.20 -17.21 -26.15 -36.80 -49.42 -62.34 -74.53 -88.71 -115.34 162.88 113.81 87.31 66.62 3 0° Scale for |S 12| 12.2 FLM1011-20F X-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM1011-20F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5