FAIRCHILD IRFU410A

IRFU410A
Advanced Power MOSFET
IRFU410A
BVDSS = 520 V
RDS(on) = 10.0 Ω
ID = 1.2 A
Improved Inductive Ruggedness
Rugged Polysilicon Gate Cell Structure
Fast Switching Times
Lower Input Capacitance
Improved Gate Charge
TO-220
Extended Safe Operating Area
Improved High Temperature Reliability
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
Ο
ID
Continuous Drain Current (TC=25 C )
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ , TSTG
V
A
0.8
1
O
4.0
+
_ 20
O
1
O
1
O
O3
40
mJ
1.2
A
2
Ο
PD
Units
520
1.2
Ο
Continuous Drain Current (TC=100 C )
IDM
Value
Total Power Dissipation (TC=25 C )
Linear Derating Factor
Operating Junction and
A
V
4.2
mJ
3.5
V/ns
42
W
0.33
W/ C
Ο
-55 to +150
Storage Temperature Range
Ο
TL
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RθJC
Junction-to-Case
--
3.0
Rθ CS
Case-to-Sink
1.7
--
Rθ JA
Junction-to-Ambient
--
110
Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFU410A
Electrical Characteristics (TC=25 C unless otherwise specified)
Ο
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆ BV/ ∆TJ
Breakdown Voltage Temp. Coeff.
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
520
--
--
V
0.60
--
2.0
--
4.0
V
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
1000
--
--
10
Ω
VGS=10V,ID=0.6A
4
O
Ω
VDS¡Ã50V,ID=0.6A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
--
0.70
--
Ciss
Input Capacitance
--
-
300
Coss
Output Capacitance
--
-
80
Crss
Reverse Transfer Capacitance
--
-
40
td(on)
Turn-On Delay Time
--
-
20
Rise Time
--
-
30
Turn-Off Delay Time
--
-
60
tf
ID=250 µ A
--
Forward Transconductance
td(off)
VGS=0V,ID=250 µ A
V/ C
gfs
tr
Ο
Test Condition
Fall Time
--
-
45
Qg
Total Gate Charge
--
--
21
Qgs
Gate-Source Charge
--
4.5
--
Qgd
Gate-Drain(“Miller”) Charge
--
9.5
--
nA
See Fig 7
VDS=4V,ID=250 µA
VGS=30V
VGS=-30V
µA
pF
ns
nC
VDS=520V
Ο
VDS=416V,TC=125 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=260V,ID=1.2A,RG=9.1Ω
See Fig 13
4 O
5
O
VDS=416V,VGS=10V,ID=1.2A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
Pulsed-Source Current
VSD
Diode Forward Voltage
1
O
4
O
--
--
1.2
--
--
4.0
--
--
1.15
V
A
Test Condition
Integral reverse pn-diode
in the MOSFET
Ο
TJ=25 C,IS=1.2A,VGS= 0V
trr
Reverse Recovery Time
--
350
--
ns
TJ=25 C,IF=1.2A
Qrr
Reverse Recovery Charge
--
506
-
µC
diF/dt=100A/ µs
Notes ;
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
2 L=40mH, V =25V, R =25 Ω , Starting T =25 C
O
O3 dv/dt Test Condition
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
_ 2%
O
5 Essentially Independent of Operating Temperature
O
Ο
dd
G
J
Ο
4
O
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 1. Output Characteristics
1 BOTTOM
ID, DRAIN CURRENT (AMPERES)
VGS
10V
9V
8V
7V
6V
5V
TOP :
Id, DRAIN CURRENT (AMPERES)
Fig 2. Transfer Characteristics
3
10
0.1
@Note :
1. 250us Pulse Test
2. Tc=25 oC
80us Pulse Test
Vds>Id(on)Rds(on)
1
Tj=25 oC
Tj=-25 oC
0
0.01
0.1
1
10
Tj=150 oC
2
100
0
2
Fig 3. On-Resistance vs. Drain Current
6
8
10
12
Fig 4. Source-Drain Diode Forward Voltage
20
100
VGS=10V
16
12
VGS=20V
8
@ Note : Tj=25C o
4
0.0
0.5
1.0
1.5
2.0
2.5
Tj=25oC
Tj=150oC
10
@Note :
1. Vgs=0V
2. 250us Pulse Test
1
0
3.0
1
ID,DRAIN CURRENT(AMPERES)
Typical On-Resistance Vs. Drain Current
2
3
4
5
6
VSD,SOURCE-TO-DRAIN VOLTAGE(VOLTS)
Typical Source-Drain Diode Forward Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
16
250
Vgs, GATE-TO-SOURCE VOLTAGE(VOLTS)
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
200
Capacitance (pF)
4
Vgs,GATE-TO-SOURCE VOLTAGE(VOLTS)
Typical Transfer Characteristics
IDR,REVERSE DRAIN CURRENT (AMPERES)
Rds(on), DRAIN -TO-SOURCE ON RESISTANCE(OHMS)
VDS,DRAIN-TO-SOURCE VOLTAGE(VOLTS)
Typical Output Characteristics
150
Ciss
100
@Notes :
1. Vgs=0V
2. f=1MHz
Coss
50
Crss
0
1
10
VDS, Drain -Source Voltage (v)
100
14
12
10
8
6
VDS=400V
4
2
ID=1.2A
0
0
2
4
6
8
10
Qg,TOTAL GATE CHARGE(nC)
Typical Gate Charge Vs. Gate-To-Source Voltage
12
14
N-CHANNEL
POWER MOSFET
IRFU410A
1.0
0.9
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
BVDSS,DRAIN-TO-SORUCE BREAKDOWN VOLTAGE
(NORMALIZED)
1.1
Fig 8. On-Resistance vs. Temperature
2.8
2.4
2.0
1.6
1.2
VGS=10V
ID=0.6A
0.8
0.4
-50
0
50
100
150
Tj=JUNCTION TEMPERATURE(o)C
Breakdown Voltage Vs. Temperature
Tj,JUNCTION TEMPERATURE(oC)
Breakdown Voltage Vs. Temperature
Fig 10. Max. Drain Current vs. Case Temperature
2.0
ID, DRAIN CURRENT (AMPERES)
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
(NORMALIZED)
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.5
1.0
0.5
0.0
25.0
37.5
50.0
62.5
75.0
87.5
100.0
112.5
125.0
Ta, AMBIENT TEMPERATURE(oC)
Maximum Drain Current Vs. Case Temperature
137.5
150.0
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
12V
VGS
Same Type
as DUT
50KΩ
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (IG)
Resistor
Charge
Current Sampling (ID)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated VDS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.