SFF9250L Advanced Power MOSFET FEATURES BVDSS = -200 V ❑ Logic-Level Gate Drive RDS(on) = 0.23 Ω ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ID = -12.6 A ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V TO-3PF ❑ Lower RDS(ON) : 0.175 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Value Units -200 V Continuous Drain Current (TC=25 °C) -12.6 Continuous Drain Current (TC=100 °C) -7.9 ① A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① 20.4 mJ dv/dt Peak Diode Recovery dv/dt ③ -5.0 V/ns 90 W 0.72 W/ °C PD Total Power Dissipation (TC=25 °C) Linear Derating Factor Operating Junction and TJ , TSTG A ±20 V 990 mJ -12.6 A - 55 to +150 Storage Temperature Range °C Maximum Lead Temp. for Soldering TL -50.4 300 Purposes, 1/8″ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 0.61 RθJA Junction-to-Ambient -- 40 Units °C /W Rev. A P-CHANNEL POWER MOSFET SFF9250L Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage -200 -- ΔBV/ΔTJ Breakdown Voltage Temp. Coeff. -- -0.17 -- VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Gate Threshold Voltage -1.0 -- -2.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 Drain-to-Source Leakage Current V -- -- V nA μA .175 0.23 gfs Forward Transconductance -- Ciss Input Capacitance -- 2500 3250 Coss Output Capacitance -- 400 520 Crss Reverse Transfer Capacitance -- 210 270 td(on) Turn-On Delay Time -- 20 Rise Time -- 150 310 Turn-Off Delay Time -- 100 210 Fall Time -- 65 140 Qg Total Gate Charge -- 90 120 Qgs Gate-Source Charge -- 12 -- Qgd Gate-Drain(Miller) Charge -- 54 -- tr td(off) tf 13 VGS=0V,ID=-250μA V/ °C ID=-250μA Static Drain-Source On-State Resistance Test Condition -- See Fig 7 VDS=-5V,ID=-250μA VGS=-20V VGS=20V VDS=-200V VDS=-160V,TC=125 °C Ω VGS=-5V,ID=-6.3A ④ S VDS=-40V,ID=-6.3A ④ pF 50 VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-12.6A, ns RG=6.2Ω ④⑤ See Fig 13 VDS=-160V,VGS=-5V, nC ID=-12.6A See Fig 6 & Fig 12 ④ ⑤ Source-Drain Diode Ratings and Characteristics Symbol IS Characteristic Min. Typ. Max. Units Continuous Source Current -- -- -12.6 -50.4 A Test Condition Integral reverse pn-diode ISM Pulsed-Source Current ① -- -- VSD Diode Forward Voltage ④ -- -- -1.5 trr Reverse Recovery Time -- 260 -- ns TJ=25 °C,IF=-19.5A,VDD=-160V -- 2.8 -- μC diF/dt=100A/μs Qrr Reverse Recovery Charge V in the MOSFET TJ=25 °C,IS=-12.6A,VGS=0V Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=3.9mH, IAS=-19.5A, VDD=-50V, RG=27Ω, Starting TJ =25℃ ③ ISD≤-19.5A, di/dt≤500A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature ④ P-CHANNEL POWER MOSFET SFF9250L Fig 2. Transfer Characteristics 1 10 -I D , Drain Current [A] -I D, Drain Current [A] Fig 1. Output Characteristics VGS Top : -10.0 V -8.0 V -6.0 V -5.0 V -4.5 V -4.0 V -3.5 V Bottom : -3.0 V 0 10 1 10 150℃ 0 10 25℃ -55℃ ※ Note 1. VDS = -40V 2. 250μ s Pulse Test ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 0 10 2 1 10 10 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage -I DR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 0.8 0.6 VGS = - 5V 0.4 VGS = - 10V 0.2 1 10 0 10 150℃ 25℃ ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ -1 0.0 0 20 40 60 80 100 10 0.6 1.2 1.8 2.4 3.0 3.6 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 12000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10500 6000 4500 Ciss 3000 Coss Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 1500 -VGS, Gate-Source Voltage [V] Capacitances [pF] 7500 0 -1 10 6 VDS = -40V 9000 VDS = -100V VDS = -160V 4 2 ※ Note : ID = -19.5 A 0 0 10 1 10 -VDS, Drain-Source Voltage [V] 0 20 40 60 QG, Total Gate Charge [nC] 80 100 P-CHANNEL POWER MOSFET SFF9250L Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.5 1.1 1.0 ※ Note : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 ※ Note : 1. VGS = -5 V 2. ID = -9.8 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 20 Operation in This Area is Limited by R DS(on) 2 15 -I D, Drain Current [A] 100 µs 1 ms 10 ms 1 10 DC 0 10 ※ Notes : 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 0 1 10 0 25 2 10 10 50 75 100 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Fig 11. Thermal Response ( t) , T h e r m a l R e s p o n s e 10 0 D = 0 .5 ※ N o te s : 1 . Z θ J C( t ) = 0 . 6 1 ℃ / W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 θ JC 10 t1 0 .0 1 Z -I D, Drain Current [A] 10 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 10 0 10 1 125 150 P-CHANNEL POWER MOSFET SFF9250L Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF -5V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS t on td(on) VDD RG ( 0.5 rated VDS ) Vin t off tr td(off) tf 10% DUT -5V VDS 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD tp ID VDD RG VDS (t) ID (t) -5V DUT IAS BVDSS Time P-CHANNEL POWER MOSFET SFF9250L Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4