FAIRCHILD SFR9210F

SFR/U9210
Advanced Power MOSFET
FEATURES
BVDSS = -200 V
Avalanche Rugged Technology
RDS(on) = 3.0 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -1.6 A
Improved Gate Charge
Extended Safe Operating Area
D-PAK
Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
Lower RDS(ON) : 2.084 Ω (Typ.)
I-PAK
2
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
Value
o
ID
Continuous Drain Current (TC=25 C)
Continuous Drain Current (TC=100 C)
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
1
O
-6.4
+
_ 30
A
O
1
O
1
O
O3
119
mJ
-1.6
A
2
o
Total Power Dissipation (TC=25 C)
Linear Derating Factor
TL
A
-1.08
o
Total Power Dissipation (TA=25 C) *
TJ , TSTG
V
-1.6
o
IDM
PD
Units
-200
Operating Junction and
V
1.9
mJ
-5.0
V/ns
2.5
W
19
W
0.15
W/ C
o
- 55 to +150
Storage Temperature Range
o
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RθJC
Junction-to-Case
--
6.58
RθJA
Junction-to-Ambient *
--
50
RθJA
Junction-to-Ambient
--
110
Units
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
P-CHANNEL
POWER MOSFET
SFR/U9210
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆BV/∆TJ
Breakdown Voltage Temp. Coeff.
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
-200
--
---
-2.0
--
-4.0
Gate-Source Leakage , Forward
--
--
-100
Gate-Source Leakage , Reverse
--
--
100
--
--
-10
--
--
-100
--
--
3.0
Ω
VGS=-10V,ID=-0.8A
4
O
Ω
VDS=-40V,ID=-0.8A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
--
1.0
--
Ciss
Input Capacitance
--
220
285
Coss
Output Capacitance
--
45
65
Crss
Reverse Transfer Capacitance
--
16
25
td(on)
Turn-On Delay Time
--
10
30
Rise Time
--
20
50
Turn-Off Delay Time
--
27
65
Fall Time
--
12
35
Qg
Total Gate Charge
--
9
11
Qgs
Gate-Source Charge
--
1.8
--
Qgd
Gate-Drain(£¢Miller£¢) Charge
--
4.8
--
tf
See Fig 7
-0.2
Forward Transconductance
td(off)
VGS=0V,ID=-250µA
o
V/ C ID=-250µA
--
gfs
tr
V
Test Condition
V
nA
µA
pF
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-200V
o
VDS=-160V,TC=125 C
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-100V,ID=-1.75A,
ns
RG=18 Ω
See Fig 13
4 O
5
O
VDS=-160V,VGS=-10V,
nC
ID=-1.75A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
-1.6
ISM
Pulsed-Source Current
1
O
--
--
-6.4
VSD
Diode Forward Voltage
O
--
--
-4.0
V
TJ=25 C,IS=-1.6A,VGS=0V
trr
Reverse Recovery Time
--
110
--
ns
TJ=25 C,IF=-1.75A
Qrr
Reverse Recovery Charge
--
0.42
--
µC
diF/dt=100A/µs
4
A
Notes ;
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
o
2 L=70mH, I =-1.6A, V =-50V, R =27Ω*, Starting T =25 C
O
AS
DD
G
J
3
O ISD <_-1.75A, di/dt <_ 250A/µs, VDD <_ BVDSS , Starting T J =25oC
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
_ 2%
O
5 Essentially Independent of Operating Temperature
O
©1999 Fairchild Semiconductor Corporation
Integral reverse pn-diode
in the MOSFET
o
o
4
O
P-CHANNEL
POWER MOSFET
SFR/U9210
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V GS
-ID , Drain Current
-ID , Drain Current
100
[A]
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
[A]
Top :
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
10-1
10-1
100
100
150 oC
25 C
10-1
101
2
4
8
10
Fig 4. Source-Drain Diode Forward Voltage
[A]
Fig 3. On-Resistance vs. Drain Current
10
-IDR , Reverse Drain Current
RDS(on) , [Ω ]
Drain-Source On-Resistance
6
-VGS , Gate-Source Voltage [V]
8
6
VGS = -10 V
4
2
VGS = -20 V
@ Note : TJ = 25 oC
0
1
2
3
4
5
6
100
150 oC
7
0.5
-ID , Drain Current [A]
Coss= Cds+ Cgd
Crss= Cgd
300
C oss
200
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
-VDS , Drain-Source Voltage [V]
©1999 Fairchild Semiconductor Corporation
-VGS , Gate-Source Voltage
Ciss= Cgs+ Cgd ( Cds= shorted )
0
100
1.5
2.0
2.5
3.0
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
Fig 5. Capacitance vs. Drain-Source Voltage
C rss
1.0
-VSD , Source-Drain Voltage [V]
400
C iss
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
25 oC
10-1
0
[pF]
3. 250 µs Pulse Test
- 55 oC
-VDS , Drain-Source Voltage [V]
Capacitance
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
o
VDS = -40 V
VDS = -100 V
VDS = -160 V
10
5
@ Notes : ID =-1.75 A
0
0
2
4
6
QG , Total Gate Charge [nC]
8
10
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized)
1.2
1.1
1.0
@ Notes :
1. VGS = 0 V
2. ID = -250 µA
0.9
0.8
-75
-50
-25
0
25
50
75
100
125
150
Drain-Source On-Resistance
-BVDSS , (Normalized)
Drain-Source Breakdown Voltage
SFR/U9210
3.0
2.5
2.0
1.5
1.0
0.0
-75
175
@ Notes :
1. VGS = -10 V
2. ID = -0.9 A
0.5
-50
-25
o
Fig 9. Max. Safe Operating Area
[A]
25
50
75
100
125
150
175
Fig 10. Max. Drain Current vs. Case Temperature
101
[A]
2.0
Operation in This Area
is Limited by R DS(on)
-ID , Drain Current
-ID , Drain Current
0
TJ , Junction Temperature [oC]
TJ , Junction Temperature [ C]
0.1 ms
1 ms
100
10 ms
DC
@ Notes :
1. TC = 25 oC
10-1
2. TJ = 150 oC
3. Single Pulse
100
101
1.6
1.2
0.8
0.4
0.0
25
102
50
75
100
Tc , Case Temperature [oC]
-VDS , Drain-Source Voltage [V]
Fig 11. Thermal Response
D=0.5
θJC
Z
@ Notes :
1. Zθ J C (t)=6.58 o C/W Max.
2. Duty Factor, D=t1 /t 2
0.2
10 0
0.1
3. TJ M -T C =P D M *Z θ J C (t)
0.05
(t) ,
Thermal Response
10 1
P.DM
0.02
t1.
t2.
0.01
10- 1
10- 5
single pulse
10- 4
10 - 3
10 - 2
10 - 1
t 1 , Square Wave Pulse Duration
©1999 Fairchild Semiconductor Corporation
100
[sec]
10 1
125
150
P-CHANNEL
POWER MOSFET
SFR/U9210
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
-10V
300nF
VDS
Qgd
Qgs
VGS
DUT
-3mA
R1
R2
Current Sampling (IG)
Resistor
Charge
Current Sampling (ID)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
t on
Vout
td(on)
VDD
Vin
( 0.5 rated VDS )
RG
Vin
t off
tr
td(off)
tf
10%
DUT
-10V
Vout
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
tp
ID
VDD
RG
C
VDD
-10V
tp
©1999 Fairchild Semiconductor Corporation
VDS (t)
ID (t)
DUT
IAS
BVDSS
Time
P-CHANNEL
POWER MOSFET
SFR/U9210
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
-IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
IS
( DUT )
di/dt
IFM , Body Diode Forward Current
Vf
VDS
( DUT )
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
©1999 Fairchild Semiconductor Corporation
VDD
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.