MJW21193 (PNP) MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com • Total Harmonic Distortion Characterized • High DC Current Gain – • • hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc Collector Current – Continuous Collector Current – Peak (Note 1) IC 16 30 Adc Base Current – Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W Thermal Resistance, Junction to Ambient RθJA 40 °C/W Operating and Storage Junction Temperature Range 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS 1 2 3 TO–247 CASE 340K STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic MJW 2119x LLYWW 1 BASE 1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%. 3 EMITTER 2 COLLECTOR MJW2119x = Device Code x = 3 or 4 LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MJW21193 TO–247 30 Units/Rail MJW21194 TO–247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 1 1 Publication Order Number: MJW21193/D MJW21193 (PNP) MJW21194 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 250 – – Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO – – 100 µAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO – – 100 µAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX – – 100 µAdc 4.0 2.25 – – – – 20 8 – – 60 – – – 2.2 – – – – 1.4 4 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 80 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched – 0.8 – – 0.08 – fT 4 – – MHz Cob – – 500 pF Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % 6.5 6.0 5.5 NPN MJW21194 f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJW21193 VCE = 10 V 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 MJW21193 (PNP) MJW21194 (NPN) TYPICAL CHARACTERISTICS PNP MJW21193 NPN MJW21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJW21193 NPN MJW21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 6. DC Current Gain, VCE = 5 V PNP MJW21193 NPN MJW21194 30 35 1.5 A 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 100 Figure 3. DC Current Gain, VCE = 20 V 1000 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C 0 1.0 10 IC COLLECTOR CURRENT (AMPS) 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25°C 0 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJW21193 (PNP) MJW21194 (NPN) TYPICAL CHARACTERISTICS PNP MJW21193 NPN MJW21194 1.4 TJ = 25°C IC/IB = 10 2.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 1.0 VBE(sat) 0.5 VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C IC/IB = 10 1.2 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) 0 0.1 100 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages NPN MJW21194 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP MJW21193 TJ = 25°C 1.0 VCE = 20 V (SOLID) 0.1 0.1 10 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base–Emitter Voltage Figure 12. Typical Base–Emitter Voltage PNP MJW21193 NPN MJW21194 100 10 mSec 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 25°C 0.1 0.1 100 100 100 mSec 1 Sec 1.0 0.1 10 1.0 VCE = 5 V (DASHED) 1.0 100 1.0 10 100 10 mSec 10 1 Sec 1.0 0.1 1000 100 mSec 1.0 10 100 1000 VCE, COLLECTOR EMITTER (VOLTS) VCE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area http://onsemi.com 4 MJW21193 (PNP) MJW21194 (NPN) The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 10000 10000 TC = 25°C C, CAPACITANCE (pF) Cib 1000 Cob 100 0.1 1.0 10 100 0.1 100 Cib 1000 f(test) = 1 MHz) Cob f(test) = 1 MHz) 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21193 Typical Capacitance Figure 16. MJW21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) TC = 25°C 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion http://onsemi.com 5 100 MJW21193 (PNP) MJW21194 (NPN) +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 Ω DUT 0.5 Ω 0.5 Ω DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 8.0 Ω MJW21193 (PNP) MJW21194 (NPN) PACKAGE DIMENSIONS TO–247 CASE 340K–01 ISSUE C 0.25 (0.010) M –T– –Q– T B M E –B– C L U A R 1 K 2 3 –Y– P V H F D 0.25 (0.010) M 4 Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. J G DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER S http://onsemi.com 7 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 MJW21193 (PNP) MJW21194 (NPN) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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