Databook.fxp 1/13/99 2:09 PM Page F-2 F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ01 Process. Datasheet Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426 DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ01 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Min Typ – 40 – 50 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 10 pA VGS = – 20V, VDS = ØV – 0.5 –6 V VDS = 10V, ID = 1 µA 0.03 0.6 mA VDS = 10V, VGS = ØV – 0.5 Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 175 µS VDS = 10V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 2 pF VDS = 10V, VGS = ØV f = 1 MHz 0.9 pF VDS = 10V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-3 F-3 01/99 NJ01 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.1 V 250 250 Transconductance in µS Drain Current in µA VGS = Ø V 200 VGS = – 0.5 V 150 VGS = –1.0 V 100 VGS = –1.5 V 50 VGS = –2.0 V 5 10 15 100 50 0 –1 –2 –3 –4 –5 –6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Leakage Current as a Function of Temperature 10k 800 600 400 200 1k 100 10 1.0 0.1 0 –1 –2 –3 –4 –5 –6 0 50 75 100 125 Ambient Temperature °C Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 150 Feedback Capacitance in pF 2.0 VDS = Ø V 3 VDS = 10 V 2 1 0.1 25 Gate Source Cutoff Voltage in Volts 4 Input Capacitance in pF 150 20 Leakage Current in pA Drain Saturation Current in µA 0 200 1 Gate Source Voltage in Volts 10 20 VDS = Ø V 1.5 VDS = 10 V 1.0 0.5 0.1 1 Gate Source Voltage in Volts 10 20