INTERFET NJ1800DL

Databook.fxp 1/13/99 2:09 PM Page F-46
F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
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Low-Current
Low Gate Leakage Current
High Input Impedance
Low-Noise
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
Device in this Databook based on the NJ1800DL Process.
S
Datasheet
IF1801
Die Size = 0.052" X 0.052"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ1800DL Process
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Reverse Gate Leakage Current
IGSS
Drain Saturation Current (Pulsed)
IDSS
Gate Source Cutoff Voltage
VGS(OFF)
Min
Typ
– 15
– 25
Max
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
– 100
pA
VGS = – 10V, VDS = ØV
50
800
mA
VDS = 10V, VGS = ØV
– 0.1
–4
V
VDS = 10V, ID = 1 nA
– 30
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
gfs
350
mS
VDS = 10V, VGS = ØV
f = 1 kHz
Input Capacitance
Ciss
160
pF
ID = 1 mA, VGS = ØV
f = 1 MHz
Feedback Capacitance
Crss
50
pF
VDS = 10V, VGS = ØV
f = 1 MHz
Equivalent Noise Voltage
e¯ N
0.7
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
nV/√HZ VDG = 4V, ID = 5 mA
f = 1 kHz
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Databook.fxp 1/13/99 2:09 PM Page F-47
F-47
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
Gfs as a Function of VGS(OFF)
VGS(OFF) = Ð2.3 V
500
500
Transconductance in mS
Drain Current in mA
VGS = Ø V
400
VGS = –0.5 V
300
VGS = –1.0 V
200
VGS = –1.5 V
100
VGS = –2.0 V
2
4
6
200
100
0
–1
–2
–3
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF)
Gfs as a Function of IDSS
1000
–4
350
800
600
400
200
300
250
200
150
100
0
–1
–2
–3
–4
0
20
40
60
Drain Source Cutoff Voltage in Volts
Drain Saturation Current in mA
Noise as a Function of Frequency
Input Capacitance as a Function of VGS
3.0
80
600
IDSS = 40 mA
VDG = 4 V
ID = 5 mA
2.5
2.0
Input Capacitance in pF
ENoise Voltage in nV/√Hz
300
8
Transconductance in mS
Drain Saturation Current in mA
0
400
1.5
1.0
0.5
10
100
1K
Frequency in Hz
10K
100K
VDS = Ø V
500
400
300
200
100
0
–4
–8
– 12
Gate Source Voltage in Volts
– 16