WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 Features: 2 1. BASE 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 0.6 A Collector Power Dissipation PD 0.5 W Junction Temperature Tj +150 ˚C Tstg -55 to +150 ˚C Rating Storage Temperature Range Device Marking WTM2222A = 2222A , 1P ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Symbol Min Typ Max Unit BVCBO 75 - - V BVCEO 40 - - V BVEBO 6.0 - - V Collector Cutoff Current VCB=60V ICBO - - 10 nA Collector Cutoff Current VEB =5.0V IEBO - - 10 nA Parameter Collector-Base Breakdown Voltage IC=10µA Collector-Emitter Breakdown Voltage IC=10mA Emitter-Base Breakdown Voltage IE=10µA WEITRON http://www.weitron.com.tw 1/4 27-Sep-2012 WTM2222A ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Symbol Min Typ Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 35 50 75 100 40 50 - 300 - - Collector-Emitter Saturation Voltage IC=150mA, I B=15mA IC=500mA, I B=50mA VCE(sat)1 VCE(sat)2 - - 300 1.0 mV V Base-Emitter Saturation Voltage IC=150mA, I B=15mA IC=500mA, I B=50mA VBE(sat)1 VBE(sat)2 0.6 - - 1.2 2.0 V V fT 300 - - MHz C ob - - 8 pF td - - 10 ns tr - - 25 ns Storage Time VCC=30V, I C =150mA, I B1= -IB2=15mA ts - - 225 ns Fall Time VCC=30V, I C =150mA, I B1= -IB2=15mA tf - - 60 ns Characteristic ON CHARACTERISTICS(1) DC Current Gain VCE=10V, I C =100µA VCE=10V, I C =1.0mA VCE=10V, I C =10mA VCE=10V, I C =150mA VCE=10V, I C =500mA VCE=1.0V, IC =150mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, I C =20mA, f=100MHz Output Capacitance VCB=10V, I E =0, f=1MHz Delay Time VCC=30V, I C =150mA, V I B1=15mA Rise Time VCC=30V, I C =150mA, V I B1=15mA WEITRON http://www.weitron.com.tw 2/4 27-Sep-2012 WTM2222A ELECTRICAL CHARACTERISTIC CURVES hFE Static Characteristic 1000 COMMON EMITTER Ta=25℃ hFE 800uA DC CURRENT GAIN COLLECTOR CURRENT IC 900uA 0.20 700uA 0.15 600uA 500uA 0.10 400uA Ta=100℃ Ta=25℃ 100 300uA 0.05 200uA COMMON EMITTER VCE= 10V IB= 100uA 0.00 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— 14 10 16 1 10 100 COLLECTOR CURRENT VCE (V) IC VBEsat —— 1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 1mA IC (A) 0.25 100 Ta=100 ℃ Ta=25℃ IC 600 (mA) IC 900 Ta=25℃ 600 Ta=100 ℃ β=10 10 10 IC 600 100 COLLECTOR CURREMT —— IC 1 fT VBE —— IC (mA) IC (MHz) 500 100 fT TRANSITION FREQUENCY T =2 5℃ a T= a 10 0℃ 10 1 COMMON EMITTER VCE= 10V 100 COMMON EMITTER VCE=10V Ta=25℃ 0.1 10 0 300 600 900 1200 1 10 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) Ta=25 ℃ C Cib 10 Cob http://www.weitron.com.tw —— IC (mA) Ta 500 400 300 200 100 0 1 REVERSE VOLTAGE WEITRON PC 600 f=1MHz IE=0/IC=0 1 0.1 100 COLLECTOR CURRENT BESE-EMMITER VOLTAGE VBE (mV) CAPACITANCE 600 100 COLLECTOR CURREMT IC (mA) 10 (mA) 600 COLLECTOR CURRENT β=10 300 1 10 V 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 3/4 100 Ta 125 150 (℃ ) 27-Sep-2012 WTM2222A SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 4/4 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500 TYP 2.900 3.100 27-Sep-2012