APTGT50TA170PG Triple phase leg Trench + Field Stop IGBT® Power Module VBUS2 VBUS3 G1 G3 G5 U G2 E2 0/VBUS1 E3 U E5 W G4 G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 1 0/VBUS 1 V VBUS 2 VBUS 3 G1 G3 E1 E3 0/VBUS 2 G5 0/VBUS 3 E2 E4 E6 G2 G4 G6 V W Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA E5 Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Kelvin emitter for easy drive Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Max ratings Unit V 1700 TC = 25°C 70 A TC = 80°C 50 TC = 25°C 100 ±20 V TC = 25°C 310 W Tj = 125°C 100A @ 1600V July, 2006 E1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50TA170PG – Rev 1 VBUS1 VCES = 1700V IC = 50A @ Tc = 80°C APTGT50TA170PG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Symbol Characteristic IRM IF Min Test Conditions Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 2.0 2.4 5.8 Typ 4400 180 150 370 40 Max Unit 250 2.4 µA 6.5 400 V nA Max Unit ns 180 400 50 800 ns 250 16 mJ 15 Typ Max Unit V VR=1700V Tj = 25°C Tj = 125°C IF = 50A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 50 1.8 1.9 385 IF = 50A VR = 900V di/dt =800A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 490 14 23 6 Tj = 125°C 12 www.microsemi.com V pF 1700 DC Forward Current VF Typ 650 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 50A R G = 10Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 50A R G = 10Ω VGE = 15V Tj = 125°C VBus = 900V IC = 50A Tj = 125°C R G = 10Ω Diode ratings and characteristics VRRM Min 250 500 µA A 2.2 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT50TA170PG – Rev 1 Electrical Characteristics APTGT50TA170PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 3500 -40 -40 -40 3 Typ Max 0.4 0.7 Unit °C/W V 150 125 100 5 250 °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3-5 APTGT50TA170PG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT50TA170PG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 60 TJ=125°C 60 40 40 20 20 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 VGE=9V 0 1 3 VCE (V) 4 5 50 V CE = 900V V GE = 15V RG = 10Ω T J = 125°C TJ =25°C 80 60 E (mJ) 40 T J=125°C 40 TJ=125°C 20 30 Eon Eoff 20 Er 10 0 0 5 6 7 8 9 10 11 12 0 13 20 Switching Energy Losses vs Gate Resistance 80 100 125 VCE = 900V VGE =15V IC = 50A TJ = 125°C 100 Eon IC (A) 30 60 Reverse Bias Safe Operating Area 50 40 40 IC (A) V GE (V) 20 Eoff 75 50 V GE=15V T J=125°C RG=10Ω 25 10 Er 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 0.35 0.3 0.25 0.2 0.15 0 80 400 800 1200 1600 2000 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 70 IGBT 0.9 July, 2006 0 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50TA170PG – Rev 1 E (mJ) 2 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) VGE =13V V GE=15V 0 0 Thermal Impedance (°C/W) VGE=20V 80 IC (A) 80 IC (A) TJ = 125°C T J=25°C APTGT50TA170PG Forward Characteristic of diode VCE =900V D=50% RG=10 Ω T J=125°C T C=75°C 25 20 ZVS 15 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 30 ZCS 10 hard switching 5 0 0 10 20 30 40 IC (A) 50 60 70 100 90 80 70 60 50 40 30 20 10 0 TJ =25°C T J=125°C TJ=125°C 0 80 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 Diode 0.9 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50TA170PG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)