Si5855DC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible ID (A) APPLICATIONS D Charging Circuit in Portable Devices SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.375 V @ 1 A 1.0 S K D A 1206-8 ChipFETr 1 A K G A K S D G D Marking Code JB XXX Lot Traceability and Date Code Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5855DC-T1 Si5855DC-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage (MOSFET) VDS −20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS "8 Continuous Drain Current (TJ = 150_C) (MOSFET)a TA = 25_C TA = 85_C Pulsed Drain Current (MOSFET) ID Continuous Source Current (MOSFET Diode Conduction)a IS Average Foward Current (Schottky) IF Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c V −2.7 −3.6 −2.6 IDM −1.9 −10 −1.8 −0.9 IFM 7 2.1 1.1 TA = 85_C 1.1 0.6 1.9 1.1 PD TA = 85_C 1.0 TJ, Tstg A 1.0 TA = 25_C TA = 25_C Unit W 0.56 −55 to 150 260 _C Notes a. Surface Mounted on 1” x1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72232 S-40932—Rev. B, 17-May-04 www.vishay.com 1 Si5855DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t v 5 sec JJunction-to-Ambient ti t A bi ta Symbol Typical Maximum MOSFET 50 60 Schottky 54 65 90 110 95 115 30 40 30 40 MOSFET St d State Steady St t Junction to Foot Junction-to-Foot Steady State RthJA Schottky MOSFET Schottky RthJF Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = −250 mA −0.45 Typ Max Unit −1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS v −5 V, VGS = −4.5 V −10 mA A VGS = −4.5 V, ID = −2.7 A 0.095 0.110 rDS(on) VGS = −2.5 V, ID = −2.2 A 0.137 0.160 VGS = −1.8 V, ID = −1 A 0.205 0.240 gfs VDS = −10 V, ID = −2.7 A 7 VSD IS = −0.9 A, VGS = 0 V −0.8 −1.2 5.1 7.7 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.2 VDS = −10 V,, VGS = −4.5 V,, ID = −2.7 A nC 1.0 VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W IF = −0.9 A, di/dt = 100 A/ms 16 25 30 45 30 45 27 40 20 40 Typ Max ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Maximum Reverse Leakage g Current Junction Capacitance www.vishay.com 2 Symbol VF Irm CT Test Condition Min IF = 1 A 0.34 0.375 IF = 1 A, TJ = 125_C 0.255 0.290 Vr = 20 V 0.05 0.500 Vr = 20 V, TJ = 85_C 2 20 Vr = 20 V, TJ = 125_C 10 100 Vr = 10 V 90 Unit V mA pF Document Number: 72232 S-40932—Rev. B, 17-May-04 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 3 V TC = −55_C 2.5 V 8 I D − Drain Current (A) I D − Drain Current (A) 8 6 2V 4 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25_C 6 125_C 4 2 0 0.0 4.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 3.0 800 0.5 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) VGS = 1.8 V 0.4 0.3 VGS = 2.5 V 0.2 Ciss 600 400 200 VGS = 4.5 V Coss 0.1 0.0 Crss 0 0 2 4 6 8 0 10 4 ID − Drain Current (A) 12 16 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 2.7 A VGS = 4.5 V ID = 2.7 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 3 2 1 1.2 1.0 0.8 0 0 1 2 3 4 Qg − Total Gate Charge (nC) Document Number: 72232 S-40932—Rev. B, 17-May-04 5 6 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 TJ = 150_C TJ = 25_C 1 0.0 ID = 2.7 A r DS(on) − On-Resistance ( W ) I S − Source Current (A) 10 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 VSD − Source-to-Drain Voltage (V) 4 5 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 50 0.3 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 3 0.1 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−4 150 10−3 10−2 TJ − Temperature (_C) 10−1 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited I D − Drain Current (A) 10 rDS(on) Limited P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 TA = 25_C Single Pulse P(t) = 1 P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72232 S-40932—Rev. B, 17-May-04 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance MOSFET Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 10 I F − Forward Current (A) I R − Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 1 TJ = 150_C TJ = 25_C 0.001 0.0001 −50 −25 0 25 50 75 100 TJ − Junction Temperature (_C) Document Number: 72232 S-40932—Rev. B, 17-May-04 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF − Forward Voltage Drop (V) www.vishay.com 5 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 600 CT − Junction Capacitance (pF) SCHOTTKY 500 400 300 200 100 0 0 4 8 12 16 20 VKA − Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 6 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72232 S-40932—Rev. 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