Si4834BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 FEATURES D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS SCHOTTKY PRODUCT SUMMARY D Symmetrical Buck-Boost DC/DC Converter VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Schottky Diode G1 G2 Top View Ordering Information: Si4834BDY—E3 (Lead Free) Si4834BDY-T1—E3 (Lead Free with Tape and Reel) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current 5.7 6.0 4.6 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range A 30 IS TA = 25_C V 7.5 ID PD Unit 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg W −55 to 150 _C THERMAL RESISTANCE RATINGS MOSFET Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF Schottky Typ Max Typ Max 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72064 S-32621—Rev. C, 29-Dec-03 www.vishay.com 1 Si4834BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, V VGS = 0 V, V TJ = 85_C On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS(on) DS( ) gfs VSD 3.0 V "100 nA 100 Ch-1 Ch-2 1 Ch-1 2000 Ch-2 15 VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 7.5 A 0.017 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 VDS = 15 V, ID = 7.5 A IS = 1 A, A VGS = 0 V mA 19 W S Ch-1 0.47 0.5 Ch-2 0.75 1.2 7 11 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, V VGS = 4 4.5 5V V, ID = 7.5 75A 2.9 nC 2.5 1.5 2.6 td(on) 9 15 tr 10 17 19 30 9 15 Ch-1 32 55 Ch-2 35 55 td(off) Fall Time tf Source Drain Reverse Recovery Time Source-Drain trr 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W IF = 1.7 17A A, di/dt = 100 A/ms W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage g Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = −30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 72064 S-32621—Rev. C, 29-Dec-03 Si4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics 30 Transfer Characteristics 30 VGS = 10 thru 5 V 4V 25 I D − Drain Current (A) I D − Drain Current (A) 25 20 15 10 5 20 15 10 TC = 125_C 5 25_C 3V −55_C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 5 Capacitance C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 4 1200 0.040 0.030 VGS = 4.5 V 0.020 VGS = 10 V 0.010 Ciss 960 720 480 Coss 240 0.000 Crss 0 0 5 10 15 20 25 30 0 5 ID − Drain Current (A) 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 7.5 A 1.6 8 r DS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 3 VGS − Gate-to-Source Voltage (V) 6 4 2 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 Qg − Total Gate Charge (nC) Document Number: 72064 S-32621—Rev. C, 29-Dec-03 15 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.1 0.0 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD − Source-to-Drain Voltage (V) Threshold Voltage 6 8 10 Single Pulse Power, Junction-to-Ambient 0.4 100 0.2 80 ID = 250 mA −0.0 60 Power (W) V GS(th) Variance (V) 4 VGS − Gate-to-Source Voltage (V) −0.2 40 −0.4 20 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 10−1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) 1 ms I D − Drain Current (A) 10 10 ms 1 100 ms 0.1 1s 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72064 S-32621—Rev. C, 29-Dec-03 Si4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72064 S-32621—Rev. C, 29-Dec-03 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C 1 I F − Forward Current (A) I R − Reverse Current (mA) SCHOTTKY 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ − Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF − Forward Voltage Drop (V) Capacitance 200 C − Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) www.vishay.com 6 Document Number: 72064 S-32621—Rev. C, 29-Dec-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1