Si4854DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.026 @ VGS = 10 V 6.9 0.030 @ VGS = 4.5 V 6.4 0.041 @ VGS = 2.5 V 5.5 FEATURES D LITTLE FOOT Plust—Dual TrenchFETr Power MOSFET Plus Integrated Schottky Diode D PWM Optimized for Faster Swtiching APPLICATIONS SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D DC/DC Conversion for 3- to 6-A Output Current – Notebook – Desktop D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Schottky Diode G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current 5.1 5.5 4.1 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range A 30 IS TA = 25_C V 6.9 ID PD Unit 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS MOSFET Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJC Schottky Typ Max Typ Max 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71444 S-03476—Rev. A, 16-Apr-01 www.vishay.com 1 Si4854DY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "12 V Typa Max Unit "100 nA Static Gate Threshold Voltage Gate-Body Leakage VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C _ On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS(on) gfs VSD V Ch-1 1 Ch-2 100 Ch-1 15 2000 Ch-2 VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 6.9 A 0.021 0.026 VGS = 4.5 V, ID = 6.4 A 0.024 0.030 VGS = 2.5 V, ID = 5.5 A 0.034 0.041 VDS = 15 V, ID = 6.9 A IS = 1 A, VGS = 0 V m mA 22 W S Ch-1 0.7 1.2 Ch-2 0.47 0.5 9 14 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.6 Turn-On Delay Time td(on) 20 30 tr 20 30 35 55 10 20 Ch-1 40 80 Ch-2 32 70 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2.1 VDS = 15 V, VGS = 4.5 V, ID = 6.9 A VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W IF = 1.7 A, di/dt = 100 A/ms m nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = –30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 71444 S-03476—Rev. A, 16-Apr-01 Si4854DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 3 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 12 2V 18 12 TC = 125_C 6 6 0 0 0.0 25_C –55_C 0 2 4 6 8 10 0.5 VDS – Drain-to-Source Voltage (V) 1.0 0.060 1200 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 1500 VGS = 2.5 V VGS = 4.5 V 0.030 VGS = 10 V 0.015 2.0 2.5 3.0 Capacitance On-Resistance vs. Drain Current 0.075 0.045 1.5 VGS – Gate-to-Source Voltage (V) Ciss 900 600 Coss 300 Crss 0.000 0 0 6 12 18 24 30 0 6 ID – Drain Current (A) 18 24 30 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 6.9 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 8 6 4 2 1.6 VGS = 10 V ID = 6.9 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 Qg – Total Gate Charge (nC) Document Number: 71444 S-03476—Rev. A, 16-Apr-01 20 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si4854DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 40 TJ = 150_C 10 TJ = 25_C ID = 6.9 A 0.08 0.06 0.04 0.02 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 2 4 Threshold Voltage 8 10 Single Pulse Power 0.4 50 0.2 40 ID = 250 mA –0.0 Power (W) V GS(th) Variance (V) 6 VGS – Gate-to-Source Voltage (V) –0.2 30 20 –0.4 10 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 TJ – Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71444 S-03476—Rev. A, 16-Apr-01 Si4854DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C I F – Forward Current (A) I R – Reverse Current (mA) SCHOTTKY 1 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ – Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF – Forward Voltage Drop (V) Capacitance 200 C – Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) Document Number: 71444 S-03476—Rev. A, 16-Apr-01 www.vishay.com 5