Si4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A 4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D 4 5 D G Ordering Information: Si4832DY Si4832DY-T1 (with Tape and Reel) Schottky Diode G N-Channel MOSFET Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit 10 sec Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) TA = 25_C TA = 70_C ID Average Foward Current (Schottky) Pulsed Foward Current (Schottky) V "20 6.9 9 7.5 IDM Continuous Source Current (MOSFET Diode Conduction)a, b Maximum Power Dissipation (Schottky)a, b 30 VGS Pulsed Drain Current (MOSFET) Maximum Power Dissipation (MOSFET)a b Unit 30 VDS Reverse Voltage (Schottky) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Steady State 5.6 50 IS 2.1 IF 4.0 IFM A 1.2 2.3 50 TA = 25_C 2.5 1.4 TA = 70_C 1.6 0.9 2.0 1.2 TA = 25_C PD TA = 70_C W 1.3 0.8 TJ, Tstg - 55 to 150 - 55 to 150 _C Symbol Typical Maximum Unit MOSFET 40 50 Schottky 50 60 70 90 80 100 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi t (t v 10 sec))a Device MOSFET Maximum Junction-to-Ambient Junction to Ambient (t = steady state)a RthJA Schottky _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71774 S-31062—Rev. F, 26-May-03 www.vishay.com 1 Si4832DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current (MOSFET + Schottky) IDSS On-State Drain Currenta ID(on) VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 0.007 0.100 VDS = 30 V, VGS = 0 V, TJ = 100_C 1.5 10 6.5 20 VGS = 10 V, ID = 9 A 0.012 0.018 VGS = 4.5 V, ID = 7.3 A 0.019 0.028 VDS = 30 V, VGS = 0 V, TJ = 125_C Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea rDS(on) gfs VSD V VDS w 5 V, VGS = 10 V 20 nA mA A VDS = 15 V, ID = 9 A 23 IS = 3.0 A, VGS = 0 V 0.493 0.53 IS = 3.0 A, VGS = 0 V, TJ = 125_C 0.40 0.47 13 24 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5 V, ID = 9 A Rg 0.2 td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 4 nC 5.6 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W IF = 3.0 A, di/dt = 100 A/ms 1.0 2.4 16 25 10 20 35 50 13 20 40 70 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71774 S-31062—Rev. F, 26-May-03 Si4832DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 4V 30 20 10 30 20 TC = 125_C 10 3V 25_C - 55_C 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 5 Capacitance 1500 0.08 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 4 1800 0.10 0.06 0.04 VGS = 4.5 V 0.02 Ciss 1200 900 Coss 600 Crss 300 VGS = 10 V 0.00 0 0 10 20 30 40 50 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 10 1.6 VDS = 15 V ID = 9 A 8 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) 6 4 2 0 0 5 10 15 Qg - Total Gate Charge (nC) Document Number: 71774 S-31062—Rev. F, 26-May-03 20 25 1.4 VGS = 10 V ID = 9 A 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4832DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 10 TJ = 150_C TJ = 25_C 1 0.08 ID = 9.0 A 0.06 0.04 0.02 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Reverse Current (Schottky) Single Pulse Power (MOSFET) 50 30 40 1 30 V Power (W) I R - Reverse Current (mA) 10 0.1 10 V 30 20 0.01 20 V 10 0.001 0.0001 0 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Junction Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71774 S-31062—Rev. F, 26-May-03 Si4832DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) Document Number: 71774 S-31062—Rev. F, 26-May-03 www.vishay.com 5