Si7705DN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile ID (A) 0.048 @ VGS = -4.5 V - 6.3 0.068 @ VGS = -2.5 V - 5.3 APPLICATIONS 0.090 @ VGS = -1.8 V - 4.6 D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.48 V @ 0.5 A 1.0 PowerPAKt 1212-8 A 3.30 mm S K D A 3.30 mm 1 A 2 G S 3 G 4 K 8 K 7 D 6 D 5 Bottom View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 sec Steady State Drain-Source Voltage (MOSFET and Schottky) VDS -20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS "8 Continuous Drain Current (TJ = 150_C) _ (MOSFET)a TA = 25_C TA = 85_C Pulsed Drain Current (MOSFET) IS Average Foward Current (Schottky) Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range -4.5 -3.1 -20 -2.3 IF Pulsed Foward Current (Schottky) V -4.3 - 6.3 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID A -1.1 1.0 IFM 7 TA = 25_C 2.8 1.3 TA = 85_C 1.5 0.7 2.0 1.1 TA = 25_C PD TA = 85_C 1.0 TJ, Tstg Unit W 0.6 -55 to 150 _C Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 71607 S-22520—Rev. B, 27-Jan-03 www.vishay.com 1 Si7705DN New Product Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t v 10 sec Junction-to-Ambienta Symbol Typical Maximum MOSFET 35 44 Schottky 51 64 75 94 91 115 4 5 10 12 MOSFET Steady State RthJA Schottky MOSFET Junction-to-Case (Drain) Steady State Schottky RthJC Unit _ _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = -250 mA -0.45 Typ Max Unit "100 nA Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) V VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 85_C -5 VDS v -5 V, VGS = -4.5 V -20 m mA A VGS = -4.5 V, ID = -6.3 A 0.040 0.048 VGS = -2.5 V, ID = -5.3 A 0.054 0.068 VGS = -1.8 V, ID = -1 A 0.070 0.090 gfs VDS = -10 V, ID = -6.3 A 14 VSD IS = -2.3 A, VGS = 0 V -0.8 -1.2 11 17 VDS = -10 V, VGS = -4.5 V, ID = -6.3 A 2.7 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.9 Turn-On Delay Time td(on) 70 105 tr 75 110 20 30 45 70 Typ Max Rise Time Turn-Off Delay Time Fall Time td(off) VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W tf nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min IF = 0.5 A 0.42 0.48 IF = 0.5 A, TJ = 125_C 0.33 0.4 0.100 Vr = 20 V 0.002 Vr = 20 V, TJ = 85_C 0.10 1 Vr = 20 V, TJ = 125_C 1.5 10 Vr = 10 V 31 Unit V mA pF Document Number: 71607 S-22520—Rev. B, 27-Jan-03 Si7705DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 20 20 TC = -55_C VGS = 5 thru 2.5 V 25_C 16 I D - Drain Current (A) I D - Drain Current (A) 16 2V 12 8 1.5 V 4 125_C 12 8 4 1, 0.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 0.16 1600 0.12 VGS = 2.5 V VGS = 4.5 V 0.00 0 8 12 16 Ciss 800 400 4 20 Coss Crss 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 8 1.5 VDS = 10 V ID = 6.3 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 3.0 1200 0.04 0 2.5 Capacitance 2000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current VGS = 1.8 V 2.0 VGS - Gate-to-Source Voltage (V) 0.20 0.08 1.5 6 4 2 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 71607 S-22520—Rev. B, 27-Jan-03 18 21 VGS = 4.5 V ID = 6.3 A 1.3 1.1 0.9 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si7705DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 100 10 TJ = 150_C TJ = 25_C 1 0.1 0.16 0.12 ID = 6.3 A 0.08 0.04 0.00 0.01 0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 50 ID = 935 mA 0.3 40 0.2 Power (W) V GS(th) Variance (V) 1 0.1 30 20 0.0 10 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 600 Time (sec) TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71607 S-22520—Rev. B, 27-Jan-03 Si7705DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 5 1 I F - Forward Current (A) I R - Reverse Current (mA) 20 10 0.1 20 V 0.01 10 V TJ = 150_C 1 TJ = 25_C 0.001 0.0001 0.1 0 25 50 75 100 125 150 0 TJ - Junction Temperature (_C) 0.4 0.6 0.8 1.0 VF - Forward Voltage Drop (V) Capacitance 150 CT - Junction Capacitance (pF) 0.2 120 90 60 30 0 0 4 8 12 16 20 VKA - Reverse Voltage (V Document Number: 71607 S-22520—Rev. B, 27-Jan-03 www.vishay.com 5 Si7705DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115_C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 www.vishay.com 6 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 71607 S-22520—Rev. B, 27-Jan-03