Si4370DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5 FEATURES D D D D LITTLE FOOTr Plus Schottky Si4830DY Pin Compatible PWM Optimized 100% Rg Tested APPLICATIONS D Asymmetrical Buck-Boost DC/DC Converter SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Schottky Diode G2 Top View Ordering Information: Si4370DY—E3 (Lead Free) Si4370DY-T1—E3 (Lead Free with Tape and Reel) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) 10 secs Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C)a TA = 25_C Channel-1 Pulsed Drain Current Channel-2 "20 Maximum Power Dissipationa Operating Junction and Storage Temperature Range "12 Unit V 5.7 6.0 4.6 A 30 PD TA = 70_C "20 7.5 IS TA = 25_C Channel-2 "12 IDM Continuous Source Current (Diode Conduction)a Channel-1 30 ID TA = 70_C Steady State 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg W −55 to 150 _C THERMAL RESISTANCE RATINGS MOSFET Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF Schottky Typ Max Typ Max 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com 1 Si4370DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) IGSS VDS = VGS, ID = 250 mA "100 Ch-2 "100 VDS = 5 V, V VGS = 10 V VGS = 10 V V, ID = 7.5 75A Drain Source On-State Drain-Source On State Resistanceb rDS(on) DS( ) VGS = 4 4.5 5 V V, ID = 6.5 65A Forward Transconductanceb Diode Forward Voltageb 2.0 Ch-1 IDSS ID(on) D( ) 3.0 0.8 VDS = 0 V, VGS = "12 V VDS = 30 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State 1.0 Ch-2 VDS = 0 V, VGS = "20 V VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current Ch-1 gfs f VDS = 15 V V, ID = 7.5 75A VSD IS = 1 A, A VGS = 0 V Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 V nA mA 2000 Ch-1 20 Ch-2 20 A Ch-1 0.014 0.022 Ch-2 0.015 0.022 Ch-1 0.024 0.030 Ch-2 0.020 0.028 Ch-1 19 Ch-2 21 Ch-1 0.75 1.2 Ch-2 0.47 0.5 W S V Dynamica Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Turn On Delay Time Turn-On Rise Time td(on) d( ) Fall Time td(off) d( ff) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W tf Source Drain Reverse Recovery Time Source-Drain trr 7 11 Ch-2 11.5 18 Ch-1 2.9 Ch-2 3.8 Ch-1 2.5 Ch-2 Rg tr Turn Off Delay Time Turn-Off VDS = 15 V V, VGS = 4.5 4 5 V, V ID = 7.5 75A Ch-1 IF = 1.7 17A A, di/dt = 100 A/ms nC 3.5 Ch-1 0.5 1.5 1.9 Ch-2 0.5 1.8 1.9 Ch-1 9 15 Ch-2 12 20 Ch-1 10 17 Ch-2 10 17 Ch-1 19 30 Ch-2 40 66 Ch-1 9 15 Ch-2 9 15 Ch-1 35 55 Ch-2 28 45 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = −30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 72022 S-32621—Rev. C, 29-Dec-03 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL-1 Output Characteristics 30 Transfer Characteristics 30 VGS = 10 thru 5 V 4V 25 I D − Drain Current (A) I D − Drain Current (A) 25 20 15 10 5 20 15 10 TC = 125_C 5 25_C 3V −55_C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 5 Capacitance C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 4 1200 0.040 0.030 VGS = 4.5 V 0.020 VGS = 10 V 0.010 Ciss 960 720 480 Coss 240 0.000 Crss 0 0 5 10 15 20 25 30 0 5 ID − Drain Current (A) 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 7.5 A 1.6 8 r DS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 3 VGS − Gate-to-Source Voltage (V) 6 4 2 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 Qg − Total Gate Charge (nC) Document Number: 72022 S-32621—Rev. C, 29-Dec-03 15 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL-1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.1 0.0 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD − Source-to-Drain Voltage (V) Threshold Voltage 6 8 10 Single Pulse Power, Junction-to-Ambient 0.4 100 0.2 80 ID = 250 mA −0.0 60 Power (W) V GS(th) Variance (V) 4 VGS − Gate-to-Source Voltage (V) −0.2 40 −0.4 20 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 10−1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) 1 ms I D − Drain Current (A) 10 10 ms 1 100 ms 0.1 1s 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL-2 Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 4 V 25 I D − Drain Current (A) I D − Drain Current (A) 25 20 3V 15 10 20 15 10 TC = 125_C 5 5 0 0 0.0 25_C −55_C 0 2 4 6 8 10 0.5 VDS − Drain-to-Source Voltage (V) 1.0 1.5 0.032 1600 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 2000 VGS = 4.5 V VGS = 10 V 0.016 0.008 3.5 4.0 1200 800 400 0.000 Coss 0 0 5 10 15 20 25 30 0 5 ID − Drain Current (A) 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 7.5 A r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 3.0 Ciss Crss 8 6 4 2 1.6 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 Qg − Total Gate Charge (nC) www.vishay.com 6 2.5 Capacitance On-Resistance vs. Drain Current 0.040 0.024 2.0 VGS − Gate-to-Source Voltage (V) 25 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72022 S-32621—Rev. C, 29-Dec-03 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL-2 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 10 TJ = 150_C 1 TJ = 25_C ID = 7.5 A 0.04 0.03 0.02 0.01 0.00 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 2 VSD − Source-to-Drain Voltage (V) 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 100 0.3 80 ID = 250 mA 0.1 Power (W) V GS(th) Variance (V) 0.2 −0.0 −0.1 −0.2 60 40 20 −0.3 −0.4 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 10−1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) 1 ms I D − Drain Current (A) 10 10 ms 1 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 1 10 VDS − Drain-to-Source Voltage (V) 100 www.vishay.com 7 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL-2 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 10−1 1 Square Wave Pulse Duration (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 8 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C 1 I F − Forward Current (A) I R − Reverse Current (mA) SCHOTTKY 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ − Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF − Forward Voltage Drop (V) Capacitance 200 C − Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com 9