Transys Electronics L I M I T E D TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.75 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 100 µA Collector cut-off current ICEO VCE=60V, IE=0 1 mA Emitter cut-off current IEBO VEB=4V, IC=0 100 µA hFE(1) VCE=2V, IC=1A 40 hFE(2) VCE=2V, IC=0.1A 40 VCE(sat) IC=2A, IB=200mA 1 V Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V Transition frequency fT VCE=5V, IC=500mA 8 MHz Cob VCB=10V, IE=0,f=1MHz 65 pF 320 DC current gain Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range C D E F 40-80 60-120 100-200 160-320