Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1740 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-300V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-10V, IC=-50mA Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.8 V Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1 V fT VCE=-30V, IC=-10mA 70 MHz Collector output capacitance Cob VCB=-30V, IE=0, f=1MHz 5 pF Turn-ON Time ton VCC=-150V, Ic=-50mA, 0.25 µs Turn-OFF Time toff IB1=-IB2=-5mA 5 µs Transition frequency 60 200 CLASSIFICATION OF hFE(1) Rank Range Marking D E 60-120 100-200 AK