2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings (mm) (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照 MARKING 表 示 内 容 照 Fig.1 Ｐ矢視図 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters DIMENSIONS ARE IN MILLIMETERS. Maximum ratings and characteristicAbsolute maximum ratings MARKING (Tc=25°C unless otherwise specified) Item Drain-source voltage Trademark 表示内容 Ratings Unit 250 V 220 V Continuous drain current ±14 A ±2.2 ** A Pulsed drain current ID(puls] ±56 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 14 A Maximum Avalanche Energy EAS *1 129.1 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power dissipation PD Tc=25°C 105 W Ta=25°C 2.4 ** +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=1.11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 250V *5 VGS=-30V 商標 Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C Note:1. Dimension shown in ( ) is reference values. 注）１.（ ）内寸法は参考値とする。 Special specification for customer CONNECTION 11 GG: :Gate Gate D 結線図 22 S1 S1: :Source1 Source1 特殊品記号 33 S2 S2: :Source2 Source2 4G4 DD: :Drain Drain Lot No. ロットNo. S1 Type name 形名 S2 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V Typ. 250 3.0 Tch=25°C Tch=125°C ID=5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V 5 RGS=10 Ω VCC =125V ID=10A VGS=10V L=1.11mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 Max. 5.0 25 250 100 260 1178 132 6 18 4.1 33 11.1 31.5 12 7.5 14 1.10 0.155 1.05 1.65 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) ** Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 1.191 87.0 52.0 Units °C/W °C/W °C/W ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) www.fujielectric.co.jp/denshi/scd 1 2SK3613-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 150 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 2 1000mm ,t=1.6mm FR-4 PCB 125 2 (Drain pad area : 500mm ) 4 100 PD [W] PD [W] 3 75 2 50 1 25 0 0 25 50 75 100 125 0 150 0 25 50 Tc [°C] 350 75 100 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 150 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 30 IAS=6A 20V 300 10V 8V 7.5V 25 7.0V 250 20 IAS=9A 200 ID [A] EAS [mJ] 125 Tc [°C] 150 6.5V 15 IAS=14A 10 6.0V 100 5 50 0 0 25 50 75 100 125 VGS=5.5V 0 150 0 2 4 starting Tch [°C] 8 10 12 Typical Transconductance Typical Transfer Characteristic gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 6 VDS [V] 100 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 1 10 100 ID [A] 2 2SK3613-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µ s pulse test,Tch=25°C 0.6 VGS= 5.5V 6.0V 800 6.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 700 0.5 7.0V RDS(on) [ m Ω ] RDS(on) [ Ω ] 600 7.5V 8V 10V 0.4 20V 0.3 500 400 max. 300 0.2 typ. 200 0.1 100 0 0.0 0 5 10 15 20 25 -50 30 -25 0 25 50 75 100 125 150 Tch [°C] ID [A] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25°C 7.0 14 6.5 6.0 12 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 8 Vcc= 125V 6 2.5 2.0 4 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 30 40 Qg [nC] Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 0 Ciss 10 Coss 10 IF [A] -1 C [nF] 10 1 -2 Crss 10 -3 10 -1 10 0 10 VDS [V] 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] 3 2SK3613-01 FUJI POWER MOSFET Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 3 100 10 Rth(ch-a) [°C/W] 90 2 10 t [ns] tf td(off) 80 70 60 50 40 td(on) 1 10 30 20 tr 10 0 0 10 10 -1 0 10 10 1 10 0 2 1000 2000 3000 4000 5000 2 Drain Pad Area [mm ] ID [A] Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=48V 2 Avalanche Current I AV [A] 10 Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 -7 10 10 -6 -5 10 -4 10 -3 10 -1 10 10 -2 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4