2SK3688-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt PD Ratings 600 600 Continuous drain current ±16 Pulsed drain current ±64 Gate-source voltage ±30 Repetitive or non-repetitive 16 Maximum avalanche energy 242.7 Maximum drain-source dV/dt 20 Peak diode recovery dV/dt 5 1.67 Max. power dissipation 270 Operating and storage Tch +150 temperature range Tstg -55 to +150 Isolation voltage VISO 2 *1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph *2 IF< = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/μs, Vcc < Unit V V A A V A mJ kV/μs kV/μs W Remarks VGS=-30V Equivalent circuit schematic Tch < =150°C *1 VDS < = 600V *2 Ta=25°C Tc=25°C Drain(D) Gate(G) Source(S) °C °C kVrms t=60sec, f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V Tch=25°C Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω VCC =300V ID=16A VGS=10V L=1.74mH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/μs Tch=25°C 600 3.0 5.0 25 250 100 0.57 10 0.42 6.5 13 1590 2390 200 300 11 17 29 43.5 16 24 58 87 8 12 34 51 12 18 10 15 16 1.00 1.50 0.68 7.8 V V μA nA Ω S pF ns nC A V μs μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.463 75.0 Units °C/W °C/W 1 2SK3688-01L,S,SJ FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 400 50 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25 °C 40 ID [A] PD [W] 300 200 30 20V 10V 8V 7V 20 6.5V 100 10 VGS=6.0V 0 0 0 25 50 75 100 125 150 0 4 8 12 100 16 20 24 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C 100 10 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 VGS[V] 1.0 10 100 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C 1.5 6.5V VGS=6V 1 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 1.4 0.9 1.3 1.2 7V 8V 0.7 1.1 10V 20V 0.6 0.5 0.4 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.8 1.0 0.9 0.8 0.7 max. 0.6 0.5 0.3 typ. 0.4 0.2 0.3 0.2 0.1 0.1 0.0 0 10 20 ID [A] 30 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3688-01L,S,SJ FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA 7.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C 6.5 12 6.0 5.5 Vcc= 120V VGS(th) [V] 10 max. 5.0 300V 480V 4.5 3.5 min. 3.0 8 VGS [V] 4.0 6 2.5 4 2.0 1.5 2 1.0 0.5 0.0 0 -50 -25 0 25 50 75 100 125 0 150 10 20 4 10 30 40 50 60 Qg [nC] Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C Ciss 3 10 IF [A] C [pF] 10 2 10 Coss 1 1 10 Crss 0 10 0 1 10 2 10 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 3 10 VSD [V] VDS [V] 3 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A 700 600 IAS=7A 500 2 10 EAV [mJ] td(off) t [ns] td(on) IAS=10A 400 300 IAS=16A 1 10 200 tf tr 100 0 10 0 -1 10 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3688-01L,S,SJ 2 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=50V Avalanche Current I AV [A] Single Pulse 1 10 0 10 -1 10 -2 10 -8 10 -7 10 10 -6 -5 10 10 -4 -3 10 -1 10 10 -2 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 10 -6 10 -5 -4 10 -3 10 -2 10 10 0 t [sec] Outline Drawings [mm] T-pack(L) http://www.fujielectric.co.jp/fdt/scd/ T-pack(S) T-pack(SJ) [D2-pack] 4