FUJI 2SK3688-01S

2SK3688-01L,S,SJ
Super FAP-G Series
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
V DS
VDSX
ID
ID(puls]
VGS
IAR
EAS
dV DS /dt
dV/dt
PD
Ratings
600
600
Continuous drain current
±16
Pulsed drain current
±64
Gate-source voltage
±30
Repetitive or non-repetitive
16
Maximum avalanche energy
242.7
Maximum drain-source dV/dt
20
Peak diode recovery dV/dt
5
1.67
Max. power dissipation
270
Operating and storage
Tch
+150
temperature range
Tstg
-55 to +150
Isolation voltage
VISO
2
*1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph
*2 IF<
= BVDSS, Tch <
= 150°C
= -ID, -di/dt=50A/μs, Vcc <
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
Remarks
VGS=-30V
Equivalent circuit schematic
Tch <
=150°C
*1
VDS <
= 600V
*2
Ta=25°C
Tc=25°C
Drain(D)
Gate(G)
Source(S)
°C
°C
kVrms t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
t rr
Qrr
Test Conditions
ID= 250μA
VGS=0V
ID= 250μA
VDS=VGS
VDS=600V VGS=0V
Tch=25°C
Tch=125°C
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8A VGS=10V
ID=8A VDS=25V
VDS =25V
VGS=0V
f=1MHz
VCC=300V ID=8A
VGS=10V
RGS=10 Ω
VCC =300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/μs Tch=25°C
600
3.0
5.0
25
250
100
0.57
10
0.42
6.5
13
1590
2390
200
300
11
17
29
43.5
16
24
58
87
8
12
34
51
12
18
10
15
16
1.00
1.50
0.68
7.8
V
V
μA
nA
Ω
S
pF
ns
nC
A
V
μs
μC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.463
75.0
Units
°C/W
°C/W
1
2SK3688-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
400
50
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25 °C
40
ID [A]
PD [W]
300
200
30
20V
10V
8V
7V
20
6.5V
100
10
VGS=6.0V
0
0
0
25
50
75
100
125
150
0
4
8
12
100
16
20
24
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C
100
10
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
gfs [S]
ID[A]
10
1
1
0.1
0
1
2
3
4
5
6
7
8
9
0.1
0.1
10
VGS[V]
1.0
10
100
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
1.5
6.5V
VGS=6V
1
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
1.4
0.9
1.3
1.2
7V
8V
0.7
1.1
10V
20V
0.6
0.5
0.4
RDS(on) [ Ω ]
RDS(on) [ Ω ]
0.8
1.0
0.9
0.8
0.7
max.
0.6
0.5
0.3
typ.
0.4
0.2
0.3
0.2
0.1
0.1
0.0
0
10
20
ID [A]
30
0.0
-50
-25
0
25
50
75
100
125
150
Tch [°C]
2
2SK3688-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
7.0
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25 °C
6.5
12
6.0
5.5
Vcc= 120V
VGS(th) [V]
10
max.
5.0
300V
480V
4.5
3.5
min.
3.0
8
VGS [V]
4.0
6
2.5
4
2.0
1.5
2
1.0
0.5
0.0
0
-50
-25
0
25
50
75
100
125
0
150
10
20
4
10
30
40
50
60
Qg [nC]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
Ciss
3
10
IF [A]
C [pF]
10
2
10
Coss
1
1
10
Crss
0
10
0
1
10
2
10
10
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
3
10
VSD [V]
VDS [V]
3
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
700
600
IAS=7A
500
2
10
EAV [mJ]
td(off)
t [ns]
td(on)
IAS=10A
400
300
IAS=16A
1
10
200
tf
tr
100
0
10
0
-1
10
10
0
10
ID [A]
1
10
2
0
25
50
75
100
125
150
starting Tch [°C]
3
2SK3688-01L,S,SJ
2
10
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=50V
Avalanche Current I AV [A]
Single Pulse
1
10
0
10
-1
10
-2
10
-8
10
-7
10
10
-6
-5
10
10
-4
-3
10
-1
10
10
-2
tAV [sec]
1
10
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
10
-6
10
-5
-4
10
-3
10
-2
10
10
0
t [sec]
Outline Drawings [mm]
T-pack(L)
http://www.fujielectric.co.jp/fdt/scd/
T-pack(S)
T-pack(SJ) [D2-pack]
4