2SK3579-01MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Ratings Unit 150 V 130 V Continuous drain current ±23 A ±96 Pulsed drain current A Gate-source voltage ±20 V 23 Repetitive or non-repetitive A Maximum Avalanche Energy 242 mJ 20 Maximum Drain-Source dV/dt kV/µs Peak Diode Recovery dV/dt 5 kV/µs 2.1 Max. power dissipation W 40 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO *6 2 kVrms < DSS, Tch=150°C < < =-ID, -di/dt=50A/µs, Vcc=BV *3 IF< *1 L=0.67mH, Vcc=48V *2 Tch=150°C *4 VDS< 250V *5 V GS =-20V *6 t=60sec f=60Hz = Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Internal Resistance (Tep.Confficient) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Rg ∆Rg/∆Τch IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V VDS=VGS ID= 250µA Tch=25°C VDS=150V VGS=0V Tch=125°C VDS=120V VGS=0V VGS=±20V VDS=0V ID=11.5A VGS=10V ID=11.5A VDS =75V VGS=0V f=1MHz VDS=25V Min. Max. 10 65 2.5 25 250 100 90 150 1.0 12 VCC=48V ID=11.5A VGS=10V RGS=10 Ω VCC =48V ID=23A VGS=10V 23.3 L=100µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C Typ. 24 1470 2200 190 285 18 27 24 36 23 35 300 450 45 68 48 72 6 9 12 18 39 54.4 0.12 23 1.10 0.13 0.6 1.65 Units V V µA nA mΩ S pF ns nC Ω %/°C A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.125 58.0 Units °C/W °C/W 1 2SK3579-01MR FUJI POWER MOSFET Characteristics 50 Allowable Power Dissipation PD=f(Tc) Typical Output Characteristics 55 45 50 40 45 20V 10V 8V 5.0V 4.5V 40 35 35 ID [A] 30 PD [W] ID=f(VDS):80µs Pulse test,Tch=25°C 25 4.0V 30 25 20 20 VGS=3.5V 15 15 10 10 5 5 0 0 25 50 75 100 125 0 0.0 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS [V] Tc [°C] Typical Transfer Characteristic Typical Transconductance ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 10 10 gfs [S] ID[A] 100 1 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.1 0.1 1 10 VGS[V] Typical Drain-Source on-state Resistance 0.16 RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.20 VGS= 3.5V 0.14 100 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 0.18 4.0V 0.16 0.14 0.10 4.5V 0.08 5V 8V 10V 20V 0.06 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.12 0.12 0.10 max. 0.08 typ. 0.06 0.04 0.04 0.02 0.02 0.00 0 10 20 30 ID [A] 40 50 0.00 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3579-01MR 4.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Typical Gate Charge Characteristics 24 VGS=f(Qg):ID=23A, Tch=25°C 22 3.5 20 18 16 max. 2.5 Vcc= 48V 14 VGS [V] VGS(th) [V] 3.0 2.0 12 10 1.5 8 min. 1.0 6 4 0.5 2 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 Tch [°C] 1 10 50 60 70 80 90 100 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 Ciss 0 IF=f(VSD):80µs Pulse test,Tch=25°C VGS=10V 10 10 C [nF] IF [A] VGS=0V Coss -1 1 10 Crss -2 10 -1 0 10 1 10 2 10 10 0.1 0.00 3 10 0.25 0.50 VDS [V] Typical Switching Characteristics vs. ID 3 0.75 1.00 1.25 1.50 VSD [V] t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 300 10 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=23A 250 tf 200 2 10 EAV [mJ] t [ns] td(off) td(on) tr 150 100 1 10 50 0 0 10 10 -1 0 10 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3579-01MR FUJI POWER MOSFET Gate-Internal Resistance vs. Tch RG=f(Tch):f=1MHz,VDS=0V 80 70 max. 60 RG [ Ω ] 50 Typ. 40 30 min. 20 10 0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Avalanche current IAV [A] Maximum Avalanche Current Pulsewidth 10 2 10 1 10 0 IAV=f(tAV):starting Tch=25°C. Vcc=48V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 1 10 Transient Thermal impedance Zth(ch-c)=f(t) :D=0 Zth(ch-c) [K/W] 0 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t [s] 4