2SK3696-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Peak diode recovery -di/dt Max. power dissipation Symbol Ratings V DS 500 ID ±13 ID(puls] ±52 VGS ±30 IAS 13 202 EAS Unit V A A V A mJ Remarks Tch < =150°C Equivalent circuit schematic *1 kV/s 20 VDS < = 500V 5 kV/µs *2 100 A/µs *3 2.16 W Ta=25°C 70 Tc=25°C Operating and storage Tch +150 °C temperature range Tstg °C -55 to +150 Isolation voltage VISO 2 kVrms t=60sec f=60Hz *1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph *2 IF < -ID, -di/dt=100A/µs, VCC < BVDSS, Tch < 150°C *3 IF <= -ID, dV/dt=5kV/µs, VCC <=BVDSS, Tch <=150°C = = = dV DS/dt dV/dt -di/dt PD Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions VGS=0V ID= 250µA ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=6.5A VGS=10V Typ. 500 3.0 Tch=25°C Tch=125°C ID=6.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6.5A VGS=10V RGS=10 Ω V CC =250V ID=13A VGS=10V L=2.20mH Tch=25°C IF=13A VGS=0V Tch=25°C IF=13A VGS=0V -di/dt=100A/µs Tch=25°C Max. 5.0 25 2 100 0.55 10 1.0 10 0.42 5.5 11 1100 1650 165 250 9 13.5 23 35 6.5 11 47 71 7.5 12 28 42 10 15 9 14 13 1.05 1.60 120 250 0.5 1.2 Units V V µA mA nA Ω S pF ns nC A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.79 58.0 Units °C/W °C/W 1 2SK3696-01MR FUJI POWER MOSFET Characteristics Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C Allowable Power Dissipation PD=f(Tc) 30 80 20V 10V 8V 70 25 60 20 7.0V ID [A] PD [W] 50 40 15 6.5V 30 10 20 5 VGS=6.0V 10 0 0 0 25 50 75 100 125 0 150 5 10 15 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 20 25 30 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 100 10 gfs [S] ID[A] 10 1 1 0.1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 1 10 100 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V 1.6 1.4 6.5V VGS=6.0V 7.0V 1.4 1.2 1.2 8V 10V 20V 1.0 RDS(on) [ Ω ] RDS(on) [ Ω ] 1.0 0.8 0.6 0.8 max. 0.6 typ. 0.4 0.4 0.2 0.2 0.0 0.0 0 5 10 15 ID [A] 20 25 30 -50 -25 0 25 50 Tch [°C] 75 100 125 150 2 2SK3696-01MR FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg):ID=13A,Tch=25 °C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 22 7.0 6.5 20 6.0 18 Vcc= 100V 16 250V 5.5 max. 4.5 14 4.0 12 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 400V 10 8 2.5 6 2.0 1.5 4 1.0 2 0.5 0 0.0 -50 -25 0 25 50 75 Tch [°C] 100 125 0 150 10 20 30 40 50 60 70 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 ° C 10n 100 Ciss 1n IF [A] 100p Coss 1 10p Crss 1p 10 -1 10 0 10 1 10 2 10 0.1 0.00 3 0.25 0.50 0.75 VDS [V] 10 3 1.00 1.25 1.50 1.75 2.00 VSD [V] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 500 450 10 350 td(off) 2 IAS=6A 400 tf IAS=8A EAS [mJ] 300 t [ns] C [F] 10 td(on) 10 250 200 1 150 tr IAS=13A 100 50 10 0 0 10 -1 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3696-01MR 10 FUJI POWER MOSFET Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25° C,Vcc=48V 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 -3 10 -1 10 10 -2 tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 10 -6 10 -5 -4 10 10 -3 10 -2 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4