2SK3468-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol Ratings Unit V V DS 500 A ID ±12 A ID(puls] ±48 V VGS ±30 A IAR *2 12 mJ EAS *1 217 kV/µs dVDS /dt 20 dV/dt *3 5 kV/µs PD Ta=25°C 2.02 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C < < DSS, Tch=150°C < *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV *1 L=2.77mH, Vcc=50V *2 Tch=150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V Typ. 500 3.0 5.0 25 250 100 0.52 Tch=25°C Tch=125°C ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω VCC =250V ID=12A VGS=10V L=2.77mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Max. 10 0.40 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 7 11 30 45 11 16.5 10 15 12 1.00 1.50 0.7 4.5 Units V V µA nA Ω S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.32 62.0 Units °C/W °C/W 1 2SK3468-01 FUJI POWER MOSFET Characteristics Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A Allowable Power Dissipation PD=f(Tc) 300 125 250 100 200 EAV [mJ] PD [W] 75 50 150 100 25 50 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 starting Tch [°C] Tc [° C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 30 20V 28 10V 8V 26 24 10 22 7.5V 20 ID[A] ID [A] 18 16 14 1 7.0V 12 10 8 VGS=6.5V 6 4 0.1 2 0 0 2 4 6 0 8 10 12 14 16 18 20 22 24 26 28 30 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 100 1.4 7.0V VGS=6.5V 7.5V 1.2 1.0 gfs [S] RDS(on) [ Ω ] 10 8V 10V 20V 0.8 0.6 1 0.4 0.2 0.1 0.0 0.1 1 10 ID [A] 0 5 10 15 20 25 30 ID [A] 2 2SK3468-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 1.4 7.0 1.3 6.5 1.2 6.0 1.1 5.5 1.0 5.0 VGS(th) [V] RDS(on) [ Ω ] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 0.9 0.8 max. 0.7 0.6 max. 4.5 4.0 3.5 min. 3.0 typ. 0.5 2.5 0.4 2.0 0.3 1.5 0.2 1.0 0.1 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 Tch [°C] 25 50 75 100 125 150 Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25°C 24 10n 22 20 Vcc= 120V 18 Ciss 1n 300V 16 480V C [F] VGS [V] 14 12 10 100p Coss 8 6 10p Crss 4 2 0 1p 0 10 20 30 40 50 60 70 80 10 -1 10 0 10 Qg [nC] 1 10 2 10 3 VDS [V] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode t=f(ID):Vcc=300V, VGS=10V, RG=10Ω IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 2 tr td(off) t [ns] IF [A] 10 td(on) 10 1 10 0 tf 1 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3468-01 FUJI POWER MOSFET 10 1 10 0 D=0.5 0.2 o Zth(ch-c) [ C/W] Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 10 0.1 0.05 -1 0.02 t 10 -2 0.01 D= 0 10 t T T -3 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth Avalanche current IAV [A] IAV=f(tAV):starting Tch=25°C. Vcc=50V 10 2 10 1 10 10 10 Single Pulse 0 -1 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4