2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±50 ±200 ±30 720.8 50 +150 -55 to +150 Unit Drain(D) V A A V mJ W °C °C *1 L=0.384mH, Vcc=24V Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol BVDSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS =60V VGS=0V VGS=±30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V Min. 60 2.5 Tch=25°C Tch=125°C 20 VDS=25V VGS =0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C Typ. 3.0 10 0.2 10 9.5 40 3100 1300 350 20 85 88 65 Max. 3.5 500 1.0 100 12 4650 1950 530 30 120 130 120 50 1.0 70 0.13 1.5 Units V V µA mA nA mΩ S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 2.5 62.5 °C/W °C/W 1 2SK2903-01MR FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 60 10 Safe operating area ID=f(VDS):D=0.01,Tc=25°C 3 50 t= 10 1µs 2 10µs 40 100µs 30 ID [A] PD [W] D.C. 10 1 1ms 10ms 20 10 100ms 0 t 10 D= t T T -1 0 0 50 100 10 -1 10 150 10 0 10 Tc [°C] 1 10 2 10 3 VDS [V] Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C 200 VGS=20V 10V 100 150 8V ID [A] ID [A] 6.0V 5.5V 100 10 5.0V 1 50 4.5V 4.0V 3.5V 0 0 1 2 3 4 0.1 5 0 2 4 VDS [V] Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 10 6 8 10 VGS [V] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 50 3 VGS= 3.5V 4.0V 4.5V 5.0V 5.5V 40 2 gfs [s] RDS(on) [m Ω ] 10 10 30 6V 20 1 8V 10V 20V 10 0 10 100 10 1 10 ID [A] 2 10 3 0 0 50 100 150 200 ID [A] 2 2SK2903-01MR FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=40A,VGS=10V 30 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA 5.0 4.5 25 4.0 3.5 max. 3.0 max. VGS(th) [V] RDS(on)[m Ω] 20 15 typ. 2.5 min. 2.0 typ. 10 1.5 1.0 5 0.5 0 -50 0 50 100 0.0 150 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=80A,Tch=25°C Typical capacitances C=f(VDS):VGS=0V,f=1MHz 50 25 100n VDS VGS 40 20 VDS [V] 30V 12V VGS [V] 15 C [F] 10n Vcc=48V 30 Ciss 20 10 1n Coss 10 5 Crss 0 100p -2 10 0 0 20 40 60 80 100 120 140 10 -1 10 200 0 10 1 10 2 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10 Ω 180 160 140 10 3 10 2 t [ns] IF [A] 120 100 80 td(off) 60 10V 5V tf VGS=0V tr 40 20 td(on) 1 0.0 0.2 0.4 0.6 0.8 VSD [V] 1.0 1.2 1.4 1.6 10 -1 10 10 0 10 1 10 2 ID [A] 3 2SK2903-01MR FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) Transient thermal impedande Zthch=f(t) parameter:D=t/T 1 10 60 50 0.5 0 Zthch-c [K/W] 10 I(AV) [A] 40 30 0.2 0.1 0.05 -1 10 0.02 t D= 0.01 20 t T T 0 -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t [s] 0 0 50 100 150 Starting Tch [°C] Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=50A 800 Eas [mJ] 600 400 200 0 0 50 100 150 Starting Tch [°C] 4