NTE225 Silicon NPN Transistor Linear Amplifier and High Speed Switch Description: The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial and commercial equipment. Typical applications include high voltage differential and operational amplifiers, high voltage inverters, and high voltage, low current switching and series regulators. Features: D High Voltage Rating: VCEO(sus) = 350V Max. D Low Saturation Voltage Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector−Emitter Sustaining Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W Lead Temperature (During Soldering, 1/32” from seating plane for 10sec Max, TL . . . . . . . +255°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector−Emitter Sustaining Voltage Collector Cutoff Current Symbol Test Conditions VCEO(sus) IC = 50mA, IB = 0, Base Open, Note 1 Min Typ Max Unit 350 − − V ICEO VCE = 300V, IB = 0 − − 20 µA ICEV VCE = 450V, VBE = −1.5V − − 500 µA Emitter Cutoff Current IEBO VBE = 6V, IC = 0 − − 20 µA DC Current Gain hFE VCE = 10V, IC = 20mA 40 − 160 VCE = 10V, IC = 2mA 30 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 4mA − − 0.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 4mA − − 1.3 V Small−Signal Current Gain hfe VCE = 10V, IC = 10mA, f = 5MHz 3 − − Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 10 pF Second Breakdown Collector Current IS/b VCE = 200V, with Base Forward Biased 50 − − mA Note 1. The sustaining voltage (VCEO(sus)) MUST NOT be measured on a curve tracer. .370 (9.39) Dia Max .315 (8.0) .065 (1.68) .143 (3.65) Min .019 (0.48) Dia Base Collector/Case Emitter .500 (12.7) .190 (4.82) .630 (16.0) 1.000 (25.4)