isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6500 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 90V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VCER Collector-Emitter Voltage RBE= 50Ω 110 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 3 A PD Total Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 5.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6500 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 90 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 50Ω 110 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V ICEV Collector Cutoff Current VCE= 110V; VBE= -1.5V VCE= 110V; VBE= -1.5V; TC= 150℃ 5 10 mA ICEO Collector Cutoff Current VCE= 70V; IB= 0 5 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 25 mA hFE DC Current Gain IC= 3A; VCE= 2V 15 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 40V, t= 1.0s, Nonrepetitive 0.4 A fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 6 MHz Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz COB isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX UNIT 60 175 pF