SEMICONDUCTOR KTX411T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 Including two(TR, Diode) devices in TSV. G (Thin Super Mini type with 5 pin) F 3 4 4 J 5 h FE Rank Q1 D1 1 4 3 1 2 J D _ 0.1 0.4 + E F G H I J K L 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H Lot No. 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 C Type Name 2 L Marking I C EQUIVALENT CIRCUIT (TOP VIEW) 5 1.6+0.2/-0.1 _ 0.05 0.70 + C D Reduce a quantity of parts and manufacturing process. B 2 G A Simplify circuit design. DIM MILLIMETERS _ 0.2 A 2.9 + 5 ANODE EMITTER BASE COLLECTOR CATHODE 3 TSV MARK SPEC KTX411T KTX411T Q1 hFE Rank : Y Q1 hFE Rank : GR CE CF Type Mark MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1 A Emitter Current IE -1 A PC * 0.9 Tj 150 Tstg -55~150 SYMBOL RATING UNIT VRRM 25 V Reverse Voltage VR 20 V Average Forward Current IO 1.0 A IFSM 3 Junction Temperature Tj 125 Storage Temperature Tstg -55~125 Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 ) DIODE D1 CHARACTERISTIC Repetitive Peak Reverse Voltage Non-Repetitive Peak Surge current 2002. 8. 13 Revision No : 2 1/4 KTX411T ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 hFE(1) (Note) VCE=2V, IC=50 120 - 400 VCE=2V, IC=1A (Pulse) 30 - - DC Current Gain hFE(2) UNIT. Collector-Emitter Saturation Voltage VCE(SAT) IC=500 , IB=50 - 0.1 0.3 V Base-Emitter Saturation Voltage VBE(SAT) IC=500 , IB=50 - 0.85 1.2 V fT VCE=10V, IC=50 - 180 - VCB=10V, IE=0, f=1 - 15 - MIN. TYP. MAX. UNIT. V Transition Frequency Cob Collector Output Capacitance Note) hFE Classification Y:120~240, GR:200~400. DIODE D1 CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage VF IF=1.0A - 0.4 0.45 Reverse Current IR VR=20V - - 200 2002. 8. 13 Revision No : 2 2/4 KTX411T D 1 (DIODE) IF - V F I R - VR C C 10m Ta =25 Ta =2 5 T C =7 5 25 1 a= C 100m REVERSE CURRENT I R (mA) 10 Ta FORWARD CURRENT I F (A) 1 1m 0.1m 0.1 0 0.2 0.3 0.4 2 10 1 100µ C Ta=-25 1µ 0 10 1000 I B =4mA 400 I B =2mA 200 I B =1mA I B =0mA 0 2 3 4 5 6 7 A 50m IB =20mA IB = IB =15mA IB =10mA 600 IB =8mA 400 IB =5mA IB =3mA 200 I B =1mA I B =0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I C - VBE VCE(sat) - I C 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE-EMITTER VOLTAGE VBE (V) 2002. 8. 13 IB =30mA COLLECTOR-EMITTER VOLTAGE V CE (V) 1.0 0 40 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE =2V 1.2 800 8 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) 1.4 1 30 I C - VCE I B =6mA 0 20 I C - VCE I B =10mA I B =8mA 600 C REVERSE VOLTAGE V R (V) COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 800 Ta=75 C Ta=25 FORWARD VOLTAGE VF (V) Q 1 (NPN TRANSISTOR) C 10µ 0.1µ 0.5 Ta=125 Revision No : 2 1.6 2.0 1.0 I C /I B=10 0.5 0.3 0.1 0.05 0.03 0.01 10 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) 3/4 KTX411T hFE - I C 2K 500 300 VCE =10V 1K DC CURRENT GAIN h FE TRANSITION FREQUENCY f T (MHz) fT - IC 500 300 100 50 30 10 100 50 30 10 5 3 1 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 2002. 8. 13 VCE =2V Revision No : 2 1k 1 3 10 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) 4/4