Si4532DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
N-Channel
P-Channel
0.065 @ VGS = 10 V
3.9
0.095 @ VGS = 4.5 V
3.1
0.085 @ VGS = –10 V
3.5
0.19 @ VGS = –4.5 V
2.5
30
–30
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
Top View
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Drain-Source Voltage
VDS
30
–30
Gate-Source Voltage
VGS
20
20
3.9
3.5
Continuous Drain Current (TJ = 150C)
150 C)A
TA = 25C
TA = 70C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)A
TA = 25C
Maximum Power Dissipation
Dissi ationA
TA = 70C
Operating Junction and Storage Temperature Range
ID
3.1
2.8
IDM
20
20
IS
1.7
–1.7
V
A
2.0
PD
W
1.3
TJ, Tstg
–55 to 150
C
RthJA
62.5
C/W
Maximum Junction-to-AmbientA
Notes
A. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70155.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-1
Si4532DY
Vishay Siliconix
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentB
Drain-Source
Drain
Source On-State
On State ResistanceB
Forward TransconductanceB
Diode Forward VoltageB
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
N-Ch
1.0
VDS = VGS, ID = –250 mA
P-Ch
–1.0
VDS = 0 V
V, VGS = "20 V
V
N-Ch
"100
P-Ch
"100
VDS = 30 V, VGS = 0 V
N-Ch
1
VDS = –30 V, VGS = 0 V
P-Ch
–1
VDS = 30 V, VGS = 0 V, TJ = 55C
N-Ch
25
VDS = –30 V, VGS = 0 V, TJ = 55C
P-Ch
VDS w 5 V, VGS = 10 V
N-Ch
15
VDS w –5 V, VGS = –10 V
P-Ch
–15
VGS = 10 V, ID = 3.9 A
N-Ch
0.043
0.065
VGS = –10 V, ID = –2.5 A
P-Ch
0.066
0.085
VGS = 4.5 V, ID = 3.1 A
N-Ch
0.075
0.095
VGS = –4.5 V, ID = –1.8 A
P-Ch
0.125
0.19
VDS = 15 V, ID = 3.9 A
N-Ch
7
VDS = –15 V, ID = – 2.5 A
P-Ch
5
IS = 1.7 A, VGS = 0 V
N-Ch
0.8
1.2
IS = –1.7 A, VGS = 0 V
P-Ch
–0.8
–1.2
N-Ch
9.8
15
P-Ch
8.7
15
N-Ch
2.1
P-Ch
1.9
N-Ch
1.6
P-Ch
1.3
N-Ch
9
15
P-Ch
7
15
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
N-Ch
6
18
P-Ch
9
18
P-Channel
VDD = –10
10 V,
V RL = 10 W
ID ^ –1 A,, VGEN = –10 V,, RG = 6 W
N-Ch
18
27
P-Ch
14
27
N-Ch
6
15
P-Ch
8
15
IF = 1.7 A, di/dt = 100 A/ms
N-Ch
52
80
IF = –1.7 A, di/dt = 100 A/ms
P-Ch
50
80
nA
mA
–25
A
W
S
V
Total Gate Charge
Gate-Source Charge
Qg
Qgs
N-Channel
N
Channel
VDS = 10 V, VGS = 10 V, ID = 3.9 A
P-Channel
10 V,
V VGS = –10
10 V,
V ID = –2.5
25A
VDS = –10
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Qgd
td(on)
tr
td(off)
tf
trr
nC
ns
Notes
A. Guaranteed by design, not subject to production testing.
B. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-2
Si4532DY
Vishay Siliconix
(
&%"&% #%#$%$
# $# #%#$%$
20
20
VGS = 10 thru 6 V
TC = –55C
5V
25C
16
I D – Drain Current (A)
I D – Drain Current (A)
16
12
8
4V
4
125C
12
8
4
3V
0
0
0
2
4
6
8
0
1
2
5
6
25
30
"% ($$% '$ # &## %
0.20
750
0.16
600
VGS = 4.5 V
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
4
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
0.12
0.08
VGS = 10 V
0.04
Ciss
450
Coss
300
150
Crss
0
0
0
4
8
12
16
20
0
5
ID – Drain Current (A)
r DS(on)– On-Resistance ( )
(Normalized)
4
2
0
2
4
6
Qg – Total Gate Charge (nC)
20
($$% '$ & %! "#%&#
6
0
15
2.0
VDS = 10 V
ID = 3.9 A
8
10
VDS – Drain-to-Source Voltage (V)
% #
10
V GS – Gate-to-Source Voltage (V)
3
8
10
1.6
VGS = 10 V
ID = 3.9 A
1.2
0.8
0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-3
Si4532DY
Vishay Siliconix
/
&+(/
("% "& &(-( &#* %/)")*% ,) */*&/&+( &#* 0.20
20
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
TJ = 150C
10
TJ = 25C
0.16
0.12
ID = 3.9 A
0.08
0.04
0
0
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
VSD – Source-to-Drain Voltage (V)
8
10
25
–0.0
20
Power (W)
V GS(th) Variance (V)
6
"% # +#) &-(
30
ID = 250 mA
0.2
4
VGS – Gate-to-Source Voltage (V)
!()!&# &#* 0.4
2
–0.2
–0.4
15
10
–0.6
5
–0.8
–1.0
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
30
Time (sec)
TJ – Temperature (C)
&($#". !($# (%)"%* $'% +%*"&%/*&/$"%*
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-4
Si4532DY
Vishay Siliconix
(
&%"&% #%#$%$
# $# #%#$%$
20
20
TC = –55C
VGS = 10, 9, 8, 7, 6 V
16
16
I D – Drain Current (A)
I D – Drain Current (A)
25C
5V
12
8
4V
4
12
125C
8
4
3V
0
0
0
2
4
6
8
0
1
VDS – Drain-to-Source Voltage (V)
2
3
4
5
($$% '$ # &## %
"% 700
600
Ciss
0.32
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
7
VGS – Gate-to-Source Voltage (V)
0.40
0.24
VGS = 4.5 V
0.16
VGS = 10 V
500
400
300
Coss
200
0.08
Crss
100
0
0
0
3
6
9
12
15
0
6
% #
10
12
18
24
30
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
($$% '$ & %! "#%&#
2.0
VDS = 10 V
ID = 2.5 A
1.8
8
r DS(on)– On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
6
6
4
2
VGS = 10 V
ID = 2.5 A
1.6
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
Qg – Total Gate Charge (nC)
8
10
0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-5
Si4532DY
Vishay Siliconix
/
&+(/
("% "& &(-( &#* %/)")*% ,) */*&/&+( &#* 0.5
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
20
10
TJ = 150C
TJ = 25C
0.4
0.3
ID = 2.5 A
0.2
0.1
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
VSD – Source-to-Drain Voltage (V)
8
10
25
0.4
20
ID = 250 mA
Power (W)
V GS(th) Variance (V)
6
"% # +#) &-(
30
0.6
0.2
15
0.0
10
–0.2
5
–0.4
–50
4
VGS – Gate-to-Source Voltage (V)
!()!&# &#* 0.8
2
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
30
Time (sec)
TJ – Temperature (C)
&($#". !($# (%)"%* $'% +%*"&%/*&/$"%*
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
4. Surface Mounted
10–3
10–2
10–1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-6
30
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Revision: 08-Apr-05
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