Si3446DV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) () ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 (3) G 3 4 2.85 mm (4) S Ordering Information: Si3446DV-T1 N-Channel MOSFET Si3446DV-T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C 5.3 TA = 70_C 4.2 Continuous Source Current (Diode Conduction)a IDM 20 IS 1.7 TA = 25_C A 2.0 PD TA = 70_C Operating Junction and Storage Temperature Range V ID Pulsed Drain Current Maximum Power Dissipationa Unit 1.3 W TJ, Tstg –55 to 150 _C Symbol Limit Unit RthJA 62.5 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70715 S-51451—Rev. C, 01-Aug-05 www.vishay.com 1 Si3446DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 A 0.6 Typ Max Unit 1.6 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70_C 5 VDS = 5 V, VGS = 4.5 V 10 A VGS = 4.5 V, ID = 5.3 A 0.032 0.045 VGS = 2.5 V, ID = 4.4 A 0.045 0.065 gfs VDS = 10 V, ID = 5.3 A 20 VSD IS = 1.7 A, VGS = 0 V rDS(on) A S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 10 VDS = 10 V, VGS = 4.5 V, ID = 5.3 A td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.2 0.5 td(on) tr 20 2.5 VDD = 10 V, RL = 10 ID ^ 1 A, VGEN = 4.5 V, RG = 6 IF = 1.7 A, di/dt = 100 A/s 3.0 30 50 50 80 65 100 35 60 60 90 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70715 S-51451—Rev. C, 01-Aug-05 Si3446DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5, 4.5, 4, 3.5, 3 V 16 16 I D – Drain Current (A) I D – Drain Current (A) 2.5 V 12 8 2V 4 12 8 TC = 125_C 4 25_C 1, 1.5 V –55_C 0 0 1 2 3 0 0.0 4 0.5 1.0 1500 0.08 1200 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 2.5 3.0 Capacitance On-Resistance vs. Drain Current 0.10 VGS = 2.5 V VGS = 4.5 V 0.04 2.0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) 0.06 1.5 Ciss 900 600 Coss 0.02 300 0.00 0 Crss 0 4 8 12 16 20 0 4 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 5 1.6 VDS = 10 V ID = 5.3 A VGS = 4.5 V ID = 5.3 A 1.4 3 2 1 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70715 S-51451—Rev. C, 01-Aug-05 8 10 (Normalized) 4 rDS(on) – On–Resistance V GS – Gate-to-Source Voltage (V) 8 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si3446DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 20 ID = 5.3 A r DS(on)– On-Resistance ( ) 10 I S – Source Current (A) 0.08 TJ = 150_C TJ = 25_C 0.06 0.04 0.02 0.00 1 0.00 0.25 0.50 0.75 1.00 1.25 0 1.50 VSD – Source-to-Drain Voltage (V) Threshold Voltage 3 4 5 Single Pulse Power 25 0.2 20 ID = 250 A 15 Power (W) VGS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) 0.4 –0.0 1 –0.2 10 –0.4 5 –0.6 –50 –25 0 25 50 75 100 125 0 0.01 150 0.10 TJ – Temperature (_C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 S www.vishay.com 4 10–1 ( 1 10 ) Document Number: 70715 S-51451—Rev. C, 01-Aug-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1