Si3443DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET VDS (V) –20 20 rDS(on) () ID (A) 0.065 @ VGS = –4.5 V 4.4 0.090 @ VGS = –2.7 V 3.7 0.100 @ VGS = –2.5 V 3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150C)a ID Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C TA = 70C Operating Junction and Storage Temperature Range V 4.4 TA = 25C 3.5 TA = 70C Maximum Power Dissipationa Unit IDM 20 IS –1.7 A 2.0 PD W 1.3 TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 62.5 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70713 S-54948—Rev. B, 29-Sep-97 www.vishay.com FaxBack 408-970-5600 2-1 Si3443DV Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.6 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta a D i S Drain-Source On-State O S Resistance R i Forward Transconductancea Diode Forward Voltagea ID(on) V "100 VDS = 0 V, VGS = "12 V VDS = –20 V, VGS = 0 V –1 VDS = –20 V, VGS = 0 V, TJ = 70C –5 VDS = –5 V, VGS = –4.5 V –15 mA A VGS = –4.5 V, ID = –4.4 A 0.058 0.065 VGS = –2.7 V, ID = –3.7 A 0.080 0.090 VGS = –2.5 V, ID = –3.5 A 0.087 0.100 gfs VDS = –10 V, ID = –4.4 A 10 VSD IS = –1.7 A, VGS = 0 V rDS(on) nA W S –1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 8.5 VDS = –10 10 V, V VGS = –4.5 45V V, ID = –4.4 44A Gate-Drain Charge Qgd 1.7 Turn-On Delay Time td(on) 15 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = –10 10 V V,, RL = 10 W ID ^ –1.0 1 0 A, A VGEN = –4.5 45V V, RG = 6 W IF = –1.7 A, di/dt = 100 A/ms 15 nC C 2.8 50 32 60 57 100 40 80 40 80 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70713 S-54948—Rev. B, 29-Sep-97 Si3443DV Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 TC = –55C 3V 16 16 I D – Drain Current (A) I D – Drain Current (A) VGS = 5, 4.5, 4, 3.5 V 2.5 V 12 8 2V 4 125C 12 25C 8 4 1.5 V 0 0 0 1 2 3 4 5 0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 0.16 1200 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 1500 VGS = 2.7 V 0.08 2.5 3.0 3.5 Capacitance On-Resistance vs. Drain Current VGS = 2.5 V 2.0 VGS – Gate-to-Source Voltage (V) 0.20 0.12 1.5 VGS = 4.5 V Ciss 900 600 0.04 300 0 0 Coss Crss 0 4 8 12 16 20 0 4 Gate Charge VDS = 10 V ID = 4.4 A r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 1.6 4 3 2 1 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70713 S-54948—Rev. B, 29-Sep-97 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 5 8 8 10 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.4 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si3443DV Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( W ) 20 I S – Source Current (A) 10 TJ = 150C TJ = 25C 0.16 0.12 ID = 4.4 A 0.08 0.04 0 1 0 0.25 0.50 0.75 1.00 1.25 0 1.50 VSD – Source-to-Drain Voltage (V) Threshold Voltage 3 4 5 Single Pulse Power 25 0.4 20 ID = 250 mA Power (W) V GS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) 0.6 0.2 1 0.0 –0.2 15 10 5 –0.4 –50 –25 0 25 50 75 100 125 150 0 0.01 0.10 TJ – Temperature (C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70713 S-54948—Rev. B, 29-Sep-97 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1