VISHAY SI4936DY

Si4936DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
30
0.037 @ VGS = 10 V
5.8
0.055 @ VGS = 4.5 V
4.7
D1
D1
D2
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)
150 C)A
TA = 25C
TA = 70C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)A
TA = 25C
Maximum Power Dissipation
Dissi ationA
TA = 70C
Operating Junction and Storage Temperature Range
ID
V
5.8
4.6
IDM
30
IS
1.7
A
2
PD
W
1.3
TJ, Tstg
–55 to 150
C
RthJA
62.5
C/W
Maximum Junction-to-AmbientA
Notes
A. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70150.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
3-1
Si4936DY
Vishay Siliconix
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55C
25
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain CurrentB
ID(on)
Drain-Source On-State ResistanceB
rDS(on)
Forward TransconductanceB
Diode Forward VoltageB
VDS w 5 V, VGS = 10 V
V
20
nA
mA
A
VGS = 10 V, ID = 5.8 A
0.030
0.037
VGS = 4.5 V, ID = 4.7 A
0.042
0.055
W
gfs
VDS = 15 V, ID = 5.8 A
13
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
S
18
25
V
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 5.8 A
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.5
Turn-On Delay Time
td(on)
10
16
tr
10
16
27
40
24
35
45
80
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
4.5
ns
Notes
A. Pulse test; pulse width v 300 ms, duty cycle v 2%.
B. Guaranteed by design, not subject to production testing.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
3-2
Si4936DY
Vishay Siliconix
'&#'& $&$%&%
$!%$ $&$%&%
30
30
VGS = 10 thru 5 V
TC = –55C
24
18
I D – Drain Current (A)
I D – Drain Current (A)
24
4V
12
6
2, 1 V
25C
125C
18
12
6
3V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
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0.10
1250
0.08
1000
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
Ciss
0.06
VGS = 4.5 V
VGS = 10 V
0.04
0.02
750
500
Coss
250
Crss
0
0
0
6
12
18
24
30
36
0
6
ID – Drain Current (A)
1.75
r DS(on)– On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
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4
2
0
0
4
8
12
Qg – Total Gate Charge (nC)
24
2.00
VDS = 15 V
ID = 5.8 A
8
18
30
VDS – Drain-to-Source Voltage (V)
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10
12
16
20
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VGS = 10 V
ID = 5.8 A
1.50
1.25
1.00
0.75
0.5
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
3-3
Si4936DY
Vishay Siliconix
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0.09
100
0.08
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150C
1
TJ = 25C
0.1
0.01
0.07
0.06
ID = 5.8 A
0.05
0.04
0.03
0.02
0.01
0
0.001
0.2
0.4
0.6
0.8
1.0
0
1.2
VSD – Source-to-Drain Voltage (V)
50
0.2
6
8
10
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40
–0.0
ID = 250 mA
30
Power (W)
V GS(th) Variance (V)
4
VGS – Gate-to-Source Voltage (V)
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0.4
2
–0.2
20
–0.4
10
–0.6
–0.8
–50
–25
0
25
50
75
100
125
0
0.01
150
0.10
TJ – Temperature (C)
1.00
10.00
Time (sec)
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2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
3-4
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