Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET VDS (V) N-Channel 1 30 N-Channel 2 rDS(on) () ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V 7.3 D1 D2 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D2 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET 1 N-Channel MOSFET 2 Parameter Symbol N-Channel 1 N-Channel 2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS 20 20 4.7 9 TA = 25C Continuous Drain Current (TJ = 150C)a, b TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25C Maximum Power Dissipationa, b TA = 70C Operating Junction and Storage Temperature Range ID Unit V 3.7 7.2 IDM 40 60 IS 1.2 2.0 1.4 2.25 0.9 1.5 TJ, Tstg –55 to 150 –55 to 150 C Symbol Typical Maximum Unit PD A W Parameter N-Ch 1 t 10 sec 90 Steady State M i Maximum Junction-to-Ambient J i A bi a N-Ch 2 t 10 sec 125 RthJA Steady State 55 C/W 80 Notes a. Surface Mounted on FR4 Board. b. t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70800 S-56946—Rev. C, 23-Nov-98 www.vishay.com FaxBack 408-970-5600 2-1 Si4824DY Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = 24 V, VGS = 0 V, TJ = 55C On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea ID(on) VDS w 5 V, VGS = 10 V N-Ch 1 1.0 N-Ch 2 1.0 V N-Ch 1 "100 N-Ch 2 "100 N-Ch 1 1 N-Ch 2 1 N-Ch 1 5 N-Ch 2 5 N-Ch 1 20 N-Ch 2 30 VSD A mA A VGS = 10 V, ID = 4.7 A N-Ch 1 0.033 0.040 VGS = 10 V, ID = 9 A N-Ch 2 0.014 0.0175 VGS = 4.5 V, ID = 3.7 A N-Ch 1 0.048 0.065 VGS = 4.5 V, ID = 7.3 A N-Ch 2 0.020 0.027 VDS = 15 V, ID = 4.7 A N-Ch 1 12 VDS = 15 V, ID = 9 A N-Ch 2 25 IS = 1.2 A, VGS = 0 V N-Ch 1 0.7 1.2 IS = 2.0 A, VGS = 0 V N-Ch 2 0.7 1.2 N-Ch 1 6.5 10 N-Ch 2 17.5 27 N-Ch 1 3.0 N-Ch 2 7.5 N-Ch 1 2.5 N-Ch 2 6.5 N-Ch 1 10 20 N-Ch 2 15 30 N-Ch 1 12 20 N-Ch 2 15 30 N-Ch 1 20 35 N-Ch 2 45 70 N-Ch 1 10 20 N-Ch 2 20 35 IF = 1.2 A, di/dt = 100 A/ms N-Ch 1 40 80 IF = 2.0 A, di/dt = 100 A/ms N-Ch 2 40 80 rDS(on) gfs nA W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Qg Qgs N-Channel 2 VDS = 15 V, VGS = 5 V, ID = 9 A Qgd td(on) tr N Ch N-Channel l1 VDD = 15 V, RL =15 W ID ^ 1 A, A VGEN = 10 V, V RG = 6 W td(off) N-Channel 2 VDD = 15 V, RL = 15 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W Rise Time Turn-Off Delay Time N-Channel N Ch l1 VDS = 15 V V, VGS = 5 V V, ID = 4.7 47A Fall Time Source-Drain Reverse Recovery Time tf trr nC C ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design aid only; not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70800 S-56946—Rev. C, 23-Nov-98 Si4824DY Vishay Siliconix Output Characteristics Transfer Characteristics 40 40 TC = –55C VGS = 10 thru 6 V I D – Drain Current (A) I D – Drain Current (A) 25C 30 5V 20 4V 10 2V 30 125C 20 10 3V 0 0 0 1 2 3 4 0 1 VDS – Drain-to-Source Voltage (V) 2 5 6 7 Capacitance On-Resistance vs. Drain Current 1200 1000 0.08 Ciss C – Capacitance (pF) r DS(on) – On-Resistance ( ) 4 VGS – Gate-to-Source Voltage (V) 0.10 VGS = 4.5 V 0.06 VGS = 10 V 0.04 0.02 800 600 400 Coss Crss 200 0 0 0 10 20 30 40 0 6 Gate Charge 10 1.55 r DS(on) – On-Resistance ( ) (Normalized) VDS = 15 V ID = 4.7 A 8 6 4 2 0 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 70800 S-56946—Rev. C, 23-Nov-98 12 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 3 12 1.35 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.7 A 1.15 0.95 0.75 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4824DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 0.10 0.08 r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150C 10 TJ = 25C ID = 4.7 A 0.06 0.04 0.02 0 1 0.4 0 0.8 0 1.6 1.2 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.45 30 0.25 ID = 250 mA 18 Power (W) V GS(th) Variance (V) 24 0.05 –0.15 –0.35 12 –0.55 6 –0.75 –0.95 –50 0 –25 0 25 50 75 100 125 150 0.01 0.10 1 TJ – Temperature (C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 0.01 t1 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.001 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70800 S-56946—Rev. C, 23-Nov-98 Si4824DY Vishay Siliconix Output Characteristics Transfer Characteristics 60 60 50 VGS = 10 thru 5 V I D – Drain Current (A) I D – Drain Current (A) 50 40 30 4V 20 10 40 30 20 TC = 125C 10 2V 25C –55C 3V 0 0 0 1 2 3 4 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.040 3000 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 0.035 0.030 0.025 VGS = 4.5 V 0.020 VGS = 10 V 2300 Ciss 1600 900 Coss 0.015 Crss 0.01 200 0 10 20 30 40 50 60 0 6 Gate Charge 1.55 1.45 8 r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A 6 4 2 0 0 4 8 12 16 20 24 Qg – Total Gate Charge (nC) Document Number: 70800 S-56946—Rev. C, 23-Nov-98 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 10 12 28 32 1.35 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A 1.25 1.15 1.05 0.95 0.85 0.75 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-5 Si4824DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 60 0.04 r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150C TJ = 25C 10 0.03 ID = 4.7 A 0.02 0.01 0 1 0.4 0 0.8 0 1.6 1.2 VSD – Source-to-Drain Voltage (V) 2 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.50 50 0.25 40 ID = 250 mA 0.00 Power (W) V GS(th) Variance (V) 4 –0.25 30 20 –0.50 10 –0.75 –1 –50 0 –25 0 25 50 75 100 125 150 0.01 0.10 1 TJ – Temperature (C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80C/W Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.001 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-6 Document Number: 70800 S-56946—Rev. C, 23-Nov-98