AOSMD AO4456

AO4456
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4456 uses advanced trench technology with a
monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AO4456 is Pb-free (meets ROHS & Sony
259 specifications). AO4456 is a Green Product
ordering option. AO4456 and AO4456 are electrically
identical.
VDS (V) = 30V
ID =20A (VGS = 10V)
RDS(ON) < 4.6mΩ (VGS = 10V)
RDS(ON) < 5.6mΩ (VGS = 4.5V)
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
Units
V
±12
V
TA=25°C
20
TA=70°C
16
IDSM
IDM
Pulsed Drain Current B
TA=25°C
Power Dissipation
Maximum
30
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
120
3.1
PDSM
TA=70°C
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2.0
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
RθJA
RθJL
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4456
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=1mA, VGS=0V
VDS=24V, V GS=0V
30
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.4
VGS=10V, V DS=5V
120
TJ=125°C
4.5
5.6
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
0.37
6430
VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=15V, ID=20A
V
mΩ
mΩ
S
0.5
V
5
A
7716
pF
756
pF
352
VGS=0V, VDS=0V, f=1MHz
µA
A
112
TJ=125°C
mA
2.4
VDS=5V, ID=20A
IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
Gate resistance
1.8
VGS=4.5V, ID=20A
VSD
Rg
20
7.4
Forward Transconductance
Crss
0.1
9
5.9
gFS
Output Capacitance
0.008
4.6
Static Drain-Source On-Resistance
Units
V
3.8
RDS(ON)
Coss
Max
0.1
VGS=10V, ID=20A
IS
Typ
pF
0.9
1.4
96
115
44
53
Ω
nC
17
nC
Qgd
Gate Drain Charge
13
nC
tD(on)
Turn-On DelayTime
17.5
ns
tr
Turn-On Rise Time
10
ns
tD(off)
Turn-Off DelayTime
56
ns
tf
Turn-Off Fall Time
10.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=300A/µs
20
Qrr
Body Diode Reverse Recovery Charge
IF=20A, dI/dt=300A/µs
26
VGS=10V, V DS=15V, R L=0.75Ω,
RGEN=3Ω
25
ns
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: June 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
30
6V
4.5V
20
ID(A)
90
ID (A)
VDS=5V
25
10V
120
VGS=3.5V
60
125°
15
10
25°C
30
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
1.8
VGS=4.5V
5
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
6
4
VGS=10V
3
2
VGS=10V
ID=20A
1.6
VGS=4.5V
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
10
ID=20A
8
1.0E+01
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
2
6
25°C
1.0E-01
1.0E-02
1.0E-03
4
25°C
1.0E-04
1.0E-05
2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
10000
VDS=15V
ID=20A
6
Capacitance (pF)
VGS (Volts)
8
4
2
6000
4000
Crss
2000
0
0
20
40
60
80
Coss
0
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
90
10µs
100.0
10ms
1.0
70
1ms
0.1s
Power (W)
RDS(ON)
limited
10.0
DC
TJ(Max)=150°C
TA=25°C
0.1
TJ(Max)=150°C
TA=25°C
80
100µ
ID (Amps)
Ciss
8000
60
50
40
30
20
10
0.0
0.1
1
10
100
VDS (Volts)
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.001
0.01
0.1
Ton
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.9
0.8
1.0E-02
10A
0.6
VDS=12V
VSD(V)
IR (A)
VDS=24V
1.0E-03
20A
0.7
1.0E-04
0.5
5A
0.4
0.3
0.2
1.0E-05
IS=1A
0.1
1.0E-06
0
50
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
70
8
di/dt=800A/us
60
Irm
trr (ns)
Irm (A)
6
125ºC
30
5
25ºC
2.5
125ºC
2
trr
15
25ºC
1.5
10
125ºC
S
1
5
10
0.5
25ºC
0
4
0
5
10
15
20
25
0
0
30
8
25ºC
125ºC
40
25ºC
30
5
4
Qrr
20
3
2
10
1
Irm
0
0
200
400
600
800
0
1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
20
25
30
3
Is=20A
30
6
25
trr (ns)
Is=20A
50
15
35
7
Irm (A)
125ºC
10
Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60
5
125ºC
2
25ºC
20
25ºC
trr
15
10
S
0
Qrr (nC)
3
di/dt=800A/us
20
25ºC
Qrr
20
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
25
7
40
50
125ºC
50
Qrr (nC)
0
S
0
S
125ºC
1
5
0
0
200
400
600
800
0
1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt