AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). AO4456 is a Green Product ordering option. AO4456 and AO4456 are electrically identical. VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Units V ±12 V TA=25°C 20 TA=70°C 16 IDSM IDM Pulsed Drain Current B TA=25°C Power Dissipation Maximum 30 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead 120 3.1 PDSM TA=70°C -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2.0 TJ, TSTG t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W AO4456 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V VDS=24V, V GS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=10V, V DS=5V 120 TJ=125°C 4.5 5.6 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.37 6430 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=20A V mΩ mΩ S 0.5 V 5 A 7716 pF 756 pF 352 VGS=0V, VDS=0V, f=1MHz µA A 112 TJ=125°C mA 2.4 VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Gate resistance 1.8 VGS=4.5V, ID=20A VSD Rg 20 7.4 Forward Transconductance Crss 0.1 9 5.9 gFS Output Capacitance 0.008 4.6 Static Drain-Source On-Resistance Units V 3.8 RDS(ON) Coss Max 0.1 VGS=10V, ID=20A IS Typ pF 0.9 1.4 96 115 44 53 Ω nC 17 nC Qgd Gate Drain Charge 13 nC tD(on) Turn-On DelayTime 17.5 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 56 ns tf Turn-Off Fall Time 10.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 26 VGS=10V, V DS=15V, R L=0.75Ω, RGEN=3Ω 25 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 30 6V 4.5V 20 ID(A) 90 ID (A) VDS=5V 25 10V 120 VGS=3.5V 60 125° 15 10 25°C 30 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 1.8 VGS=4.5V 5 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 6 4 VGS=10V 3 2 VGS=10V ID=20A 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 10 ID=20A 8 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 2 6 25°C 1.0E-01 1.0E-02 1.0E-03 4 25°C 1.0E-04 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 10 10000 VDS=15V ID=20A 6 Capacitance (pF) VGS (Volts) 8 4 2 6000 4000 Crss 2000 0 0 20 40 60 80 Coss 0 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 90 10µs 100.0 10ms 1.0 70 1ms 0.1s Power (W) RDS(ON) limited 10.0 DC TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 80 100µ ID (Amps) Ciss 8000 60 50 40 30 20 10 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 AO4456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.9 0.8 1.0E-02 10A 0.6 VDS=12V VSD(V) IR (A) VDS=24V 1.0E-03 20A 0.7 1.0E-04 0.5 5A 0.4 0.3 0.2 1.0E-05 IS=1A 0.1 1.0E-06 0 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 70 8 di/dt=800A/us 60 Irm trr (ns) Irm (A) 6 125ºC 30 5 25ºC 2.5 125ºC 2 trr 15 25ºC 1.5 10 125ºC S 1 5 10 0.5 25ºC 0 4 0 5 10 15 20 25 0 0 30 8 25ºC 125ºC 40 25ºC 30 5 4 Qrr 20 3 2 10 1 Irm 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 20 25 30 3 Is=20A 30 6 25 trr (ns) Is=20A 50 15 35 7 Irm (A) 125ºC 10 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 5 125ºC 2 25ºC 20 25ºC trr 15 10 S 0 Qrr (nC) 3 di/dt=800A/us 20 25ºC Qrr 20 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 25 7 40 50 125ºC 50 Qrr (nC) 0 S 0 S 125ºC 1 5 0 0 200 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt