AOSMD AO4706

AO4706
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
TM
SRFET
The AO4706 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Standard Product AO4706 is Pb-free (meets ROHS
& Sony 259 specifications).
VDS (V) = 30V
ID =16.5A (VGS = 10V)
RDS(ON) < 6.8mΩ (VGS = 10V)
RDS(ON) < 8.2mΩ (VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
D
D
D
D
S
S
S
G
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
AF
Current
TA=70°C
B
Repetitive avalanche energy L=0.3mH
TA=25°C
Power Dissipation
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
±12
V
13.2
IDM
100
A
IAR
30
A
EAR
135
mJ
3.1
W
2.0
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
IDSM
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Units
V
16.5
Pulsed Drain Current B
Avalanche Current
Maximum
30
RθJA
RθJL
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4706
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=1mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
100
TJ=125°C
VGS=10V, ID=16.5A
RDS(ON)
Static Drain-Source On-Resistance
Max
0.02
0.1
10
20
0.1
µA
1.85
2.4
V
5.6
6.8
8.4
10.5
6.8
8.2
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
TJ=125°C
VGS=4.5V, ID=15A
V
Forward Transconductance
VDS=5V, ID=16.5A
112
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.37
IS
Maximum Body-Diode + Schottky Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
4000
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mA
A
gFS
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Units
mΩ
mΩ
S
0.5
V
5
A
5000
pF
520
pF
217
pF
0.6
0.9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
59
77
nC
Qg(4.5V) Total Gate Charge
27
35
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, ID=17A
12
nC
11
nC
9
ns
VGS=10V, VDS=15V, RL=0.9Ω,
RGEN=3Ω
9
ns
37
ns
8
ns
IF=16.5A, dI/dt=300A/µs
17
Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/µs
21
Body Diode Reverse Recovery Time
20
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
4.5V
VDS=5V
25
3.5V
80
20
60
ID(A)
ID (A)
10V
125°
15
40
25°C
10
VGS=3V
20
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
2
7
RDS(ON) (mΩ )
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
8
VGS=4.5V
6
VGS=10V
5
4
1.8
ID=17A
1.6
VGS=10V
1.4
VGS=4.5V
1.2
ID=15A
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
15
ID=17A
1.0E+01
12
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ )
2
9
25°C
1.0E-01
1.0E-02
1.0E-03
6
25°C
1.0E-04
1.0E-05
3
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
6000
VGS=15V
ID=17A
6
5000
Capacitance (pF)
VGS (Volts)
8
4
Ciss
4000
3000
2000
Crss
2
Coss
1000
0
0
0
10
20
30
40
50
60
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
90
10µs
70
Power (W)
1ms
10.0
0.1s
10ms
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
80
100µ
ID (Amps)
10
100
100.0
1.0
5
DC
60
50
40
30
0.1
TJ(Max)=150°C
TA=25°C
20
10
0.0
0.1
1
10
100
VDS (Volts)
0
1E-04 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
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AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.9
1.0E-01
0.8
1.0E-02
0.7
20A
0.6
1.0E-03
VSD(V)
VDS=24V
IR (A)
VDS=12V
1.0E-04
10A
0.5
5A
0.4
0.3
IS=1A
0.2
1.0E-05
0.1
0
1.0E-06
0
50
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
60
2.5
125ºC
di/dt=1000A/us
25ºC
9
125ºC
Qrr
20
trr (ns)
12
Irm (A)
30
di/dt=1000A/us
12
15
40
Qrr (nC)
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
15
18
50
50
9
125ºC
2
trr
6
1
25ºC
6
Irm
25ºC
10
1.5
25ºC
S
0
S
3
3
0.5
125ºC
0
0
0
5
10
15
20
25
0
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Is=20A
125ºC
40
125º
Qrr
20
6
15
3
Irm
5
200
Is=20A
2
18
1.5
15
12
trr
25ºC
1
S
6
0.5
125ºC
3
0
0
30
25ºC
9
25ºC
10
25
2.5
21
trr (ns)
9
25
20
125ºC
24
25ºC
30
15
27
12
Irm (A)
Qrr (nC)
35
10
S
45
5
Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
15
50
0
0
400
600
800
1000
0
1200
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
0
0
200
400
600
800
1000
0
1200
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
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