AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4706 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 6.8mΩ (VGS = 10V) RDS(ON) < 8.2mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D D S S S G SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current TA=70°C B Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V 13.2 IDM 100 A IAR 30 A EAR 135 mJ 3.1 W 2.0 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A IDSM PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V 16.5 Pulsed Drain Current B Avalanche Current Maximum 30 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4706 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=1mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=16.5A RDS(ON) Static Drain-Source On-Resistance Max 0.02 0.1 10 20 0.1 µA 1.85 2.4 V 5.6 6.8 8.4 10.5 6.8 8.2 30 VDS=30V, VGS=0V IDSS ID(ON) Typ TJ=125°C VGS=4.5V, ID=15A V Forward Transconductance VDS=5V, ID=16.5A 112 VSD Diode Forward Voltage IS=1A,VGS=0V 0.37 IS Maximum Body-Diode + Schottky Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 4000 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA A gFS DYNAMIC PARAMETERS Input Capacitance Ciss Units mΩ mΩ S 0.5 V 5 A 5000 pF 520 pF 217 pF 0.6 0.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 59 77 nC Qg(4.5V) Total Gate Charge 27 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=17A 12 nC 11 nC 9 ns VGS=10V, VDS=15V, RL=0.9Ω, RGEN=3Ω 9 ns 37 ns 8 ns IF=16.5A, dI/dt=300A/µs 17 Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/µs 21 Body Diode Reverse Recovery Time 20 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: June 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 4.5V VDS=5V 25 3.5V 80 20 60 ID(A) ID (A) 10V 125° 15 40 25°C 10 VGS=3V 20 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 2 7 RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 8 VGS=4.5V 6 VGS=10V 5 4 1.8 ID=17A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 ID=15A 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 15 ID=17A 1.0E+01 12 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 2 9 25°C 1.0E-01 1.0E-02 1.0E-03 6 25°C 1.0E-04 1.0E-05 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 6000 VGS=15V ID=17A 6 5000 Capacitance (pF) VGS (Volts) 8 4 Ciss 4000 3000 2000 Crss 2 Coss 1000 0 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 90 10µs 70 Power (W) 1ms 10.0 0.1s 10ms RDS(ON) limited TJ(Max)=150°C TA=25°C 80 100µ ID (Amps) 10 100 100.0 1.0 5 DC 60 50 40 30 0.1 TJ(Max)=150°C TA=25°C 20 10 0.0 0.1 1 10 100 VDS (Volts) 0 1E-04 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.9 1.0E-01 0.8 1.0E-02 0.7 20A 0.6 1.0E-03 VSD(V) VDS=24V IR (A) VDS=12V 1.0E-04 10A 0.5 5A 0.4 0.3 IS=1A 0.2 1.0E-05 0.1 0 1.0E-06 0 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 60 2.5 125ºC di/dt=1000A/us 25ºC 9 125ºC Qrr 20 trr (ns) 12 Irm (A) 30 di/dt=1000A/us 12 15 40 Qrr (nC) 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 18 50 50 9 125ºC 2 trr 6 1 25ºC 6 Irm 25ºC 10 1.5 25ºC S 0 S 3 3 0.5 125ºC 0 0 0 5 10 15 20 25 0 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 125ºC 40 125º Qrr 20 6 15 3 Irm 5 200 Is=20A 2 18 1.5 15 12 trr 25ºC 1 S 6 0.5 125ºC 3 0 0 30 25ºC 9 25ºC 10 25 2.5 21 trr (ns) 9 25 20 125ºC 24 25ºC 30 15 27 12 Irm (A) Qrr (nC) 35 10 S 45 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 15 50 0 0 400 600 800 1000 0 1200 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 0 0 200 400 600 800 1000 0 1200 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com