AO4944 Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low and high side switch in SMPS and general purpose applications. Standard product AO4944 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V (V GS = 10V) ID = 8.6A RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G1 G2 SOIC-8 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain AF Current Pulsed Drain Current TA=70°C B Repetitive avalanche energy L=0.3mH B TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A Units V ±12 V A 6.9 IAR 16 A EAR 38 mJ 40 2 TJ, TSTG t ≤ 10s Steady-State Steady-State W 1.3 -55 to 150 Symbol A Maximum 30 ID IDM PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead S2 8.6 Avalanche Current B Power Dissipation D2 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.aosmd.com AO4944 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=250uA, VGS=0V VDS=30V, VGS=0V 30 TJ=125°C Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=8.6A RDS(ON) TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=7A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=8.6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Typ Max 0.01 0.1 5 10 0.1 µA 1.8 2.4 V 13 16 20 25 16 20 V mA A mΩ mΩ 64 0.4 1450 VGS=0V, VDS=15V, f=1MHz Units S 0.6 V 4.5 A 1885 pF 224 pF 92 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.6A pF 1.6 3.0 24 31 Ω 12.0 nC 3.9 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.6A, dI/dt=300A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=8.6A, dI/dt=300A/µs 6.8 VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω 4.7 ns 24.0 ns 4.0 ns 12 ns nC A:The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2OZ. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D: The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F: The current rating is based on the t<=10s junction to ambient thermal resistance rating. Rev0:December 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4944 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 4.5V 4V 20 60 ID(A) ID (A) VDS=5V 25 6V 3.5V 40 15 10 20 5 VGS=3V 0 DYNAMIC 1 2 3 4 5 1 1.5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 20 Normalized On-Resistance 2 VGS=4.5V 17 14 11 VGS=10V 8 VGS=10V ID=8.6A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 45 40 1.0E+01 ID=8.6A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ) 25°C 0 0 RDS(ON) (mΩ) 125° 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4944 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 2000 VDS=15V ID=8.6A 6 Capacitance (pF) VGS (Volts) 8 4 2 1500 1000 Crss 500 0 0 5 10 15 20 0 DYNAMIC PARAMETERS 1000.0 50 100.0 40 100µs 1m 1.0 T J(Max)=150°C T C=25°C 0.1 0.0 0.01 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 0.1 10ms 0.1s 1s 10s DC 1 VDS (Volts) 10 100 30 T J(Max)=150°C T C=25°C 10µs RDS(ON) limited Power (W) 10.0 Coss 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Ciss 30 20 10 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 T on 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4944 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 0.7 VDS=24V 1.0E-03 0.6 VSD(V) IR (A) 20A 0.8 VDS=12V 1.0E-04 0.5 5A 10A 0.4 0.3 IS=1A 0.2 1.0E-05 0.1 0 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 30 di/dt=800A/us 25 125ºC Qrr (nC) 20 25ºC 15 Qrr 10 5 12 10 10 8 8 6 125ºC Irm 12 25ºC trr (ns) DYNAMIC 0 50 Irm (A) 0 50 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 di/dt=800A/us 2 trr 25ºC 6 4 4 2 2 2.5 125ºC 1.5 S 1.0E-06 1 125ºC S 0.5 25ºC 0 0 5 10 15 20 25 0 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 125ºC Is=20A Qrr Irm 400 15 20 25 30 12 2.5 Is=20A 125ºC 2 600 800 9 1.5 trr 6 25ºC 2 3 125ºC 0 1000 0 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 8 4 25ºC 200 15 trr (ns) 125ºC 10 0 10 6 25ºC 0 10 25ºC 15 5 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Irm (A) Qrr (nC) 20 0 0 S 0 0 200 1 0.5 S 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com